XC6601
Series
Low Voltage Input LDO Voltage Regulators
■GENERAL
DESCRIPTION
ETR0335_003
The XC6601 series is a low voltage input CMOS LDO regulator which provides highly accurate (±20mV) outputs and can
supply current efficiently due to its ultra low on-resistance even at low output voltages. The series is ideally suited to the
applications which require very low dropout voltage operation and consists of a voltage reference, an error amplifier, a driver
transistor, a current limiter, a fold back circuit, a thermal shutdown (TSD) circuit, an under voltage lock out (UVLO) circuit and
a phase compensation circuit.
Output voltage is selectable in 0.05V increments within a range of 0.7V to 1.8V using laser trimming technology and
ceramic capacitors can be used for the output stabilization capacitor (C
L
).
The over current protection circuit (the current limiter and the fold back circuit) as well as the thermal shutdown circuit (the
TSD circuit) are built-in. These two protection circuits will operate when either the output current reaches the current limit
level or the junction temperature reaches the temperature limit level.
With the built-in UVLO function, the regulator output is forced OFF when the voltage level at the V
BIAS
pin or the V
IN
pin falls
below the UVLO voltage level.
The CE function enables the output to be turned off and the series to be put in stand-by mode resulting in greatly reduced
power consumption. At the time of entering the stand-by mode, the series enables the electric charge at the output capacitor
(C
L
) to be discharged via the internal auto-discharge switch which is located between the V
OUT
pin and the V
SS
pin. As a
result the V
OUT
pin quickly returns to the V
SS
level.
■APPLICATIONS
●Mobile
phones
●Cordless
phones
●Wireless
communication equipment
●Portable
games
●Cameras
●Audio
visual equipment
●Portable
AV equipment
●PDAs
■FEATURES
Bias Voltage Range
Maximum Output Current
Dropout Voltage
: 400mA
(Limiter 550mA TYP.)
: 38mV@I
OUT
=100mA (TYP.)
(at V
BIAS
-
V
OUT
=2.4V)
:
2.5V ~ 6.0V
(V
BIAS
- V
OUT
≧1.2V)
Input Voltage Range
Output Voltage Range
Output Voltage Accuracy
Power Consumption
UVLO
TSD (Detect/Release)
Operating Temperature Range
C
L
High Speed Auto-Discharge
Low ESR Capacitor
Packages
: 1.0V ~ 3.0V
(V
IN
≦
V
BIAS
)
: 0.7V ~ 1.8V
(0.05V increments)
:±20mV
: I
BIAS
=25μA , I
IN
=1.0μA (TYP.)
: I
BIAS
=0.01μA , I
IN
=0.01μA (TYP.)
: V
BIAS
=2.0V, V
IN
=0.4V (TYP.)
:150℃/125℃ (TYP.)
: -40℃ ~ 85℃
: Ceramic Capacitor Compatible
: USP-6C, SOT-25, SOT-89-5
■
TYPICAL APPLICATION CIRCUIT
■
TYPICAL PEFORMANCE
CHARACTERISTICS
●V
BIAS
=3.6V , V
IN
=1.8V , V
OUT
=1.5V
●Dropout
Voltage vs. Output Current
XC 6 6 0 1 B 1 2 1 M R
Ta=25 [℃]
300
250
Dropout Voltage: Vdif(mV)
200
150
100
50
0
0
100
200
Output Current: IOUT(mA)
300
400
VBIAS=3.0V
VBIAS=3.3V
VBIAS=3.6V
VBIAS=4.2V
VBIAS=5.0V
1/32
XC6601
Series
■PIN
CONFIGURATION
●USP-6C
●SOT-25
V
OUT
5
CE
4
●SOT-89-5
1
V
IN
*
The heat dissipation pad of the USP-6C
2
V
BIAS
SOT-25
(TOP VIEW)
3
V
SS
package is recommended to solder as the
recommended mount pattern and metal
mask pattern for mounting strength. This
pad should be electrically opened or
connected to the V
BIAS
(No.1) pin.
■PIN
ASSIGNMENT
PIN NUMBER
USP-6C
1
3
4
2
6
SOT-25
2
1
5
3
4
SOT-89-5
2
4
5
3
1
PIN NAME
V
BIAS
V
IN
V
OUT
V
SS
CE
FUNCTION
Power Supply Input
Driver Transistor Input
Output
Ground
ON/OFF Control
■
PRODUCT CLASSIFICATION
●Ordering
Information
XC6601①②③④⑤⑥
MARK
①
②③
DESCRIPTION
Type of
Regulators
Output Voltage
Output Voltage
Accuracy
SYMBOL
A
B
07 ~ 18
1
B
M
⑤
Packages
E
P
R
L
DESCRIPTION
: CE High Active, Pull-Down Resistor Built-in, CL Auto Discharge Function
: CE High Active, No Pull-Down Resistor Built-in, CL Auto Discharge Function
: e.g.) V
OUT(T)
=1.2V⇒②=1,③=2
: 100mV increments, ±20mV accuracy
e.g.) 1.2V⇒②=1,③=2,④=1
: 50mV increments, ±20mV accuracy
e.g.) 1.25V⇒②=1,③=2,④=B
: SOT-25
: USP-6C
: SOT-89-5
: Embossed Tape (Standard Feed)
: Embossed Tape (Reverse Feed)
④
⑥
Device Orientation
2/32
XC6601
Series
■BLOCK
DIAGRAMS
(1) XC6601A Series
(2) XC6601B Series
*
Diodes inside the circuit are an ESD protection diode and a parasitic diode.
3/32
XC6601
Series
■MAXIMUM
ABSOLUTE RATINGS
Ta=25
℃
PARAMETER
Bias Voltage
Input Voltage
Output Current
Output Voltage
CE Input Voltage
USP-6C
Power Dissipation
SOT-25
SOT-89-5
Pd
SYMBOL
V
BIAS
V
IN
I
OUT
V
OUT
V
CE
RATINGS
V
SS
-0.3 ~ +7.0
V
SS
-0.3 ~ +7.0
700
(*1)
V
SS
-0.3 ~ V
BIAS
+0.3
V
SS
-0.3 ~ V
IN
+0.3
V
SS
-0.3 ~ +7.0
100
1000 (PCB mounted) *2
250
600 (PCB mounted) *2
500
1300 (PCB mounted) *2
-40 ~ +85
-55 ~ +125
UNITS
V
V
mA
V
V
mW
Operating Temperature Range
Topr
℃
Storage Temperature Range
Tstg
℃
(*1)
I
OUT
=Less than Pd / (V
IN
-V
OUT
)
(*2)
The power dissipation figure shown is PCB mounted. Please refer to pages 28~30 for details.
4/32
XC6601
Series
■ELECTRICAL
CHARACTERISTICS
PARAMETER
Bias Voltage
(*1)
Input Voltage
(*2)
Output Voltage
Maximum Output
Current 1
Maximum Output
Current 2
Maximum Output
Current 3
Load Regulation
Dropout Voltage 1
Dropout Voltage 2
Dropout Voltage 3
Dropout Voltage 4
Supply Current 1
Supply Current 2
SYMBOL
V
BIAS
V
IN
V
OUT(E)
(*3)
I
OUTMAX 1
I
OUTMAX 2
I
OUTMAX 3
△V
OUT
Vdif1
(*7)
Vdif2
(*7)
Vdif3
(*7)
Vdif4
(*7)
I
BIAS
I
IN
CONDITIONS
V
CE
=V
BIAS
,V
IN
=V
OUT(T)
+0.3V
V
BIAS
=V
CE
=3.6V
V
BIAS
=V
CE
=3.6V, V
IN
=V
OUT(T)
+0.3V,
I
OUT
=100mA
V
CE
=V
BIAS
,V
BIAS
-V
OUT(T)
≧1.2V
V
IN
=V
OUT(T)
+0.5V
V
CE
=V
BIAS
,V
BIAS
-V
OUT(T)
≧1.3V
V
IN
=V
OUT(T)
+0.5V
V
CE
=V
BIAS
,V
BIAS
-V
OUT(T)
≧1.5V
V
IN
=V
OUT(T)
+0.5V
V
BIAS
=V
CE
=3.6V, V
IN
=V
OUT(T)
+0.3V,
1mA≦I
OUT
≦300mA
V
BIAS
=V
CE,
I
OUT
=100mA
V
CE
=V
BIAS
, I
OUT
=200mA
V
CE
=V
BIAS
, I
OUT
=300mA
V
CE
=V
BIAS
, I
OUT
=400mA
V
BIAS
=V
CE
=3.6V, V
IN
=V
OUT(T)
+0.3V
V
OUT=
OPEN
V
BIAS
=V
CE
=3.6V, V
IN
=V
OUT(T)
+0.3V
V
OUT=
OPEN
V
OUT(T)
≧1.0V
V
BIAS
=V
CE
=3.6V, V
IN
=V
OUT(T)
V
OUT
= V
OUT(T)
- 0.05V
V
OUT(T)
＜1.0V
V
BIAS
=V
CE
=3.6V, V
IN
=1.0V
V
OUT
= V
OUT(T)
- 0.05V
V
BIAS
=6.0V, V
IN
=3.0V, V
CE
=V
SS
V
BIAS
=6.0V, V
IN
=3.0V, V
CE
=V
SS
V
OUT(T)
≧1.3V
V
OUT(T)
+1.2V≦V
BIAS
≦6.0V,
V
IN
=V
OUT(T)
+0.3V, V
CE
=V
BIAS
, I
OUT
=1mA
V
OUT(T)
＜1.3V
2.5V≦V
BIAS
≦6.0V,
V
IN
=V
OUT(T)
+0.3V, V
CE
=V
BIAS
, I
OUT
=1mA
V
OUT(T)
≧0.90V,
V
OUT(T)
+0.1V≦V
IN
≦3.0V,
V
BIAS
=V
CE
=3.6V, I
OUT
=1mA
V
OUT(T)
＜0.90V,
1.0V≦V
IN
≦3.0V
V
BIAS
=V
CE
=3.6V, I
OUT
=1mA
V
CE
=V
BIAS
, V
IN
=V
OUT(T)
+0.3V,
I
OUT
=1mA
V
BIAS
=V
CE
=3.6V, I
OUT
=1mA
V
BIAS
= V
CE
=3.6V
DC
+0.2V
p-pAC,
V
IN
=V
OUT(T)
+0.3V, I
OUT=
30mA,f=1kHz
V
IN
=V
OUT(T)
+0.3V
DC
+0.2V
p-pAC,
V
BIAS
=3.6V, I
OUT=
30mA, f=1kHz
MIN.
2.5
1.0
-0.02
TYP.
-
-
(*5)
Ta=25
℃
MAX.
6.0
3.0
UNITS
CIRCUIT
V
V
V
mA
mA
mA
mV
mV
mV
mV
mV
45
3.0
μA
μA
①
①
V
OUT(T)
(*4)
+0.02
E-0
①
①
①
①
①
①
①
①
①
①
①
200
300
400
-
-
-
-
8
E-1
E-2
E-3
E-4
(*6)
(*6)
(*6)
(*6)
-
-
-
17
8
0.1
25
1.0
Bias Current
(*10)
I
BIASMAX
-
1.0
2.5
mA
①
Stand-by Current 1
Stand-by Current 2
I
BIAS_STB
I
IN_STB
-
-
0.01
0.01
0.10
0.35
μA
μA
①
①
Bias Regulation
△V
OUT
/
△V
BIAS
・V
OUT
-
0.01
0.3
%/V
①
Input Regulation
△V
OUT
/
△V
IN
・V
OUT
-
0.01
0.1
%/V
①
Bias Voltage UVLO
Input Voltage UVLO
V
BIAS
Ripple Rejection
V
IN
Ripple Rejection
V
BIAS_UVLO
V
IN_UVLO
V
BIAS_PSRR
V
IN_PSRR
1.37
0.07
-
-
2.0
0.4
40
60
2.5
0.6
-
-
V
V
dB
dB
①
①
②
②
5/32
