YJQ3622A
Product Summary
● V
DS
● I
D
● R
DS(ON)
( at V
GS
= 10V)
● R
DS(ON)
( at V
GS
= 4.5V)
● 100% UIS Tested
● 100%
½V
DS
Tested
30V
30A
＜13mohm
＜16mohm
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
DFN3.3X3.3
General Description
● Trench Power LV MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low R
DS(ON)
Applications
● High current load applications
● Load switch
● Hard switched and high frequency circuits
● Uninterruptible power supply
■
Absolute Maximum Ratings
(T
A
=25℃unless otherwise noted)
Parameter
Drain-source Voltage
Gate-source Voltage
T
C
=25℃
Drain Current
T
C
=100℃
Pulsed Drain Current
A
T
C
=25℃
Total Power Dissipation
T
C
=100℃
Single Pulse Avalanche Energy
B
Thermal Resistance Junction-to-Case
C
Junction and Storage Temperature Range
E
AS
R
θJC
T
J
,T
STG
P
D
10.5
140
7.1
-55½+175
W
mJ
℃/
W
℃
I
DM
I
D
21
115
21
A
W
Symbol
V
DS
V
GS
Limit
30
±20
30
A
Unit
V
V
■
Ordering Information
(Example)
PREFERED P/N
PACKING
CODE
Marking
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
YJQ3622A
F1
Q3622
5000
10000
100000
13“ reel
1/7
S-E608
Rev.3.1,14-Oct-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJQ3622A
■
Electrical Characteristics
(T
J
=25℃ unless otherwise noted)
Parameter
Static Parameter
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
=250μA
T
J
=25℃
Zero Gate Voltage Drain Current
I
DSS
V
DS
=30V,V
GS
=0V
T
J
=55℃
Gate-Body Leakage Current
Gate Threshold Voltage
I
GSS
V
GS(th)
V
GS
=
±20V,
V
DS
=0V
V
DS
= V
GS
, I
D
=250μA
V
GS
= 10V, I
D
=20A
Static Drain-Source On-Resistance
R
DS(ON)
V
GS
= 4.5V, I
D
=10A
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Dynamic Parameters
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Parameters
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Reverse Recovery Charge
Reverse Recovery Time
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off fall Time
Q
g
Q
gs
Q
gd
Q
rr
I
F
=15A, di/dt=100A/us
t
rr
t
D(on)
t
r
V
GS
=10V,V
DD
=20V, I
D
=2A, R
GEN
=3Ω
t
D(off)
t
f
24
24
5
7
19
ns
V
GS
=10V,V
DS
=20V,I
D
=20A
23.6
3.9
nC
7.0
0.2
C
iss
C
oss
C
rss
V
DS
=15V,V
GS
=0V,f=1MHZ
1015
201
164
pF
V
SD
I
S
I
S
=15A,V
GS
=0V
11.5
0.85
16
1.2
30
V
A
1.0
1.5
7.5
5
±100
2.5
13
mΩ
nA
V
30
1
μA
V
Symbol
Conditions
Min
Typ
Max
Units
A. Pulse Test: Pulse Width≤300us,Duty cycle
≤2%.
B. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
mounting surface of the drain pins. R
θJC
is guaranteed by design, while R
θJA
is determined by the board design. The maximum rating presented
here is based on mounting on a 1 in 2 pad of 2oz copper.
2/7
S-E608
Rev.3.1,14-Oct-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJQ3622A
■ Typical Performance Characteristics
Figure1. Output Characteristics
Figure2. Transfer Characteristics
Figure 3: On-Resistance vs. Drain Current
and Gate Voltage
Figure 4: On-Resistance vs. Junction Temperature
Figure5. Capacitance Characteristics
Figure6. Gate Charge
3/7
S-E608
Rev.3.1,14-Oct-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJQ3622A
Figure7. Safe Operation Area
Figure8. Maximum Continuous Drain Current
vs Case Temperature
Figure9.Normalized Maximum Transient Thermal Impedance
4/7
S-E608
Rev.3.1,14-Oct-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
YJQ3622A
Resistive Switching Test Circuit & Waveforms
Diode Recovery Test Circuit & Waveforms
Gate Charge Test Circuit & Waveform
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
5/7
S-E608
Rev.3.1,14-Oct-20
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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