N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt V
DS
* R
DS(on)
= 4Ω
ZVN2110A
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
100
320
6
±
20
700
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
250
75
25
8
7
8
13
13
1.5
4
100
0.8
2.4
20
1
100
MAX.
UNIT CONDITIONS.
V
V
nA
µA
µA
A
Ω
mS
pF
pF
pF
ns
ns
ns
ns
V
DD
≈25V,
I
D
=1A
V
DS
=25 V, V
GS
=0V, f=1MHz
I
D
=1mA, V
GS
=0V
ID=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=100V, V
GS
=0
V
DS
=80V, V
GS
=0V, T=125°C
(2)
V
DS
=25V, V
GS
=10V
V
GS
=10V,I
D
=1A
V
DS
=25V,I
D
=1A
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test
(3) Switching times measured with 50
Ω
source impedance and <5ns rise time on a pulse generator
ZVN2110A
TYPICAL CHARACTERISTICS
I
D(on)
-On-State Drain Current (Amps)
I
D(on)
-On-State Drain Current (Amps)
2.0
V
GS=
10V
9V
2.0
1.6
1.2
5V
0.8
4V
0.4
3V
0
2
4
6
8
10
V
GS=
10V
9V
8V
7V
6V
1.6
1.2
8V
7V
6V
0.8
5V
0.4
4V
3V
0
0
20
40
60
80
100
V
DS
- Drain Source
Voltage (Volts)
V
DS
- Drain Source
Voltage (Volts)
Output Characteristics
I
D(on)
-On-State Drain Current (Amps)
Saturation Characteristics
V
DS-
Drain Source
Voltage (Volts)
10
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
2
4
6
8
10
V
DS=
25V
V
DS=
10V
8
6
4
I
D=
1A
500mA
100mA
2
0
0
2
4
6
8
10
V
GS-
Gate Source Voltage
(Volts)
V
GS-
Gate Source
Voltage (Volts)
Voltage Saturation Characteristics
Transfer Characteristics
RDS(on)-Drain Source Resistance
(Ω)
10
2.4
Normalised R
DS(on)
and V
GS(th)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-40 -20
0
5
I
D
=
1A
500mA
100mA
rc
ou
-S
in
a
Dr
ta
sis
Re
e
D
eR
nc
)
on
S(
V
GS=
10V
I
D=
1 A
V
GS=
V
DS
I
D=
1mA
Gate Threshold Voltage V
GS(TH)
1
1
10
100
20 40 60 80 100 120 140 160 180
V
GS-
Gate Source Voltage
(Volts)
T
j
-Junction Temperature (°C)
On-resistance v gate-source voltage
Normalised R
DS(on)
and V
GS(th)
v Temperature
3-365
ZVN2110A
TYPICAL CHARACTERISTICS
500
500
g
fs
-Transconductance (mS)
g
fs
-Transconductance (mS)
400
300
200
100
V
DS=
25V
400
300
200
100
0
0
2
4
6
8
10
V
DS=
25V
0
0
0.2
0.4
0.6
0.8
1.0
I
D(on)
- Drain Current (Amps)
V
GS
-Gate Source Voltage (Volts)
Transconductance v drain current
Transconductance v gate-source voltage
16
100
V
GS
-Gate Source Voltage (Volts)
14
12
10
8
6
4
2
0
I
D=
1A
V
DS
=
20V
50V
80V
C-Capacitance (pF)
80
60
40
20
C
oss
C
rss
0
10
20
30
40
50
C
iss
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
V
DS
-Drain Source Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
3-366
NXP MCU
