2.1 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
2.1 A, 100 V, 0.25 ohm, N沟道, 硅, POWER, 场效应管
厂商名称:Diodes
厂商官网:http://www.diodes.com/
下载文档型号 | ZXMN10A08DN8TA | ZXMN10A08DN8TC | ZXMN10A08DN8 |
---|---|---|---|
描述 | 2.1 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET | 2.1 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET | 2.1 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
端子数量 | 8 | 8 | 8 |
最小击穿电压 | 100 V | 100 V | 100 V |
加工封装描述 | SO-8 | SO-8 | SO-8 |
无铅 | Yes | Yes | Yes |
欧盟RoHS规范 | Yes | Yes | Yes |
中国RoHS规范 | Yes | Yes | Yes |
状态 | ACTIVE | ACTIVE | ACTIVE |
包装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
包装尺寸 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
表面贴装 | Yes | Yes | Yes |
端子形式 | GULL WING | GULL WING | GULL WING |
端子涂层 | MATTE TIN | MATTE TIN | MATTE TIN |
端子位置 | DUAL | DUAL | DUAL |
包装材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
结构 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
元件数量 | 1 | 1 | 1 |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON |
通道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
场效应晶体管技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
操作模式 | ENHANCEMENT | ENHANCEMENT | ENHANCEMENT |
晶体管类型 | GENERAL PURPOSE POWER | GENERAL PURPOSE POWER | GENERAL PURPOSE POWER |
最大漏电流 | 2.1 A | 2.1 A | 2.1 A |
最大漏极导通电阻 | 0.2500 ohm | 0.2500 ohm | 0.2500 ohm |
最大漏电流脉冲 | 9 A | 9 A | 9 A |