IPI04N03LA, IPP04N03LA
OptiMOS
®
2 Power-Transistor
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC for target applications
• N-channel - Logic level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
• Pb-free lead plating; RoHS compliant
1)
Product Summary
V
DS
R
DS(on),max
I
D
25
4.2
80
V
m
A
PG-TO262-3
PG-TO220-3
Type
IPI04N03LA
IPP04N03LA
Package
PG-TO262-3
PG-TO220-3
Marking
04N03LA
04N03LA
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
2)
T
C
=100 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
C
=25 °C
3)
I
D
=77 A,
R
GS
=25
I
D
=80 A,
V
DS
=20 V,
di /dt =200 A/μs,
T
j,max
=175 °C
Value
80
80
385
290
mJ
Unit
A
Reverse diode dv /dt
Gate source voltage
4)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
dv /dt
V
GS
P
tot
T
j
,
T
stg
6
kV/μs
±20
T
C
=25 °C
107
-55 ... 175
55/175/56
V
W
°C
J-STD20 and JESD22
Rev. 1.9
page 1
2007-08-29
IPI04N03LA, IPP04N03LA
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R
thJC
R
thJA
minimal footprint
6 cm
2
cooling area
5)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=60 μA
V
DS
=25 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=25 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=55 A
V
GS
=10 V,
I
D
=55 A
Gate resistance
Transconductance
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=55 A
25
1.2
-
-
1.6
0.1
-
2
1
μA
V
-
-
-
-
-
-
1.4
62
40
K/W
Values
typ.
max.
Unit
-
-
-
10
10
5.4
100
100
6.7
nA
m
-
-
43
3.5
1.1
85
4.2
-
-
S
2)
Current is limited by bondwire; with an
R
thJC
=1.4 K/W the chip is able to carry 125
See figure 3
3)
T
j,max
=150 °C and duty cycle
D
<0.25 for
V
GS
<-5 V
5)
4)
Device on 40 mm x 40 mm x 1.5 mm
epoxy PCB FR4 with 6 cm
2
(one layer, 70
μm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.9
page 2
2007-08-29
IPI04N03LA, IPP04N03LA
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
6)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
I
S
I
S,pulse
V
SD
T
C
=25 °C
V
GS
=0 V,
I
F
=80 A,
T
j
=25 °C
V
R
=15 V,
I
F
=I
S
,
di
F
/dt =400 A/μs
-
-
-
-
-
0.96
80
385
1.2
V
A
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g(sync)
Q
oss
V
DS
=0.1 V,
V
GS
=0 to 5 V
V
DD
=15 V,
V
GS
=0 V
V
DD
=15 V,
I
D
=40 A,
V
GS
=0 to 5 V
-
-
-
-
-
-
-
-
10
4.6
7.2
12
24
3.3
20
27
13
6.2
11
17
32
-
27
35
V
nC
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=15 V,
V
GS
=10 V,
I
D
=20 A,
R
G
=2.7
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
-
-
-
-
-
-
-
2915
1236
175
13
4.5
38
5.4
3877
1643
263
19
7.0
57
8.1
ns
pF
Values
typ.
max.
Unit
Reverse recovery charge
Q
rr
-
-
15
nC
6)
See figure 16 for gate charge parameter definition
Rev. 1.9
page 3
2007-08-29
IPI04N03LA, IPP04N03LA
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
10 V
120
100
100
80
80
60
P
tot
[W]
60
I
D
[A]
40
20
0
0
50
100
150
200
0
50
100
150
200
40
20
0
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
1000
1 μs
limited by on-state
resistance
10 μs
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1
0.5
100
100 μs
0.2
DC
Z
thJC
[K/W]
I
D
[A]
0.1
0.1
1 ms
0.05
0.02
0.01
single pulse
10 ms
10
0.01
1
0.1
1
10
100
0.001
10
-6
0
10
-5
0
10
-4
0
10
-3
0
10
-2
0
10
-1
0
10
0
1
V
DS
[V]
t
p
[s]
Rev. 1.9
page 4
2007-08-29
IPI04N03LA, IPP04N03LA
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
140
10 V
4.5 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
20
3V
3.2 V
4.1 V
3.5 V
3.8 V
4.1 V
120
15
100
80
3.8 V
R
DS(on)
[m ]
I
D
[A]
10
60
3.5 V
4.5 V
40
3.2 V
5
10 V
20
3V
2.8 V
0
0
1
2
3
0
0
20
40
60
80
100
120
140
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
160
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
120
140
100
120
80
100
80
g
fs
[S]
175 °C
25 °C
I
D
[A]
60
60
40
40
20
20
0
0
1
2
3
4
5
0
0
20
40
60
80
V
GS
[V]
I
D
[A]
Rev. 1.9
page 5
2007-08-29
