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0CANH-002-XTP

Interface Circuit, 1-Trnsvr, PDSO8, 0.150 INCH, GREEN, PLASTIC, SOIC-8

器件类别:无线/射频/通信    电信电路   

厂商名称:AMI Semiconductor

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
AMI Semiconductor
包装说明
0.150 INCH, GREEN, PLASTIC, SOIC-8
Reach Compliance Code
unknown
Is Samacsys
N
JESD-30 代码
R-PDSO-G8
JESD-609代码
e3/e4
长度
4.9276 mm
功能数量
1
端子数量
8
收发器数量
1
最高工作温度
125 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装等效代码
SOP8,.25
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
电源
5 V
认证状态
Not Qualified
座面最大高度
1.7272 mm
最大压摆率
0.065 mA
标称供电电压
5 V
表面贴装
YES
电信集成电路类型
INTERFACE CIRCUIT
温度等级
AUTOMOTIVE
端子面层
MATTE TIN/NICKEL PALLADIUM GOLD
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
40
宽度
3.937 mm
Base Number Matches
1
文档预览
AMIS-30660 High-Speed CAN Transceiver
Data Sheet
1.0 General Description
The AMIS-30660 CAN transceiver is the interface between a controller area network (CAN) protocol controller and the physical bus and
may be used in both 12V and 24V systems. The transceiver provides differential transmit capability to the bus and differential receive
capability to the CAN controller.
Due to the wide common-mode voltage range of the receiver inputs, the AMIS-30660 is able to reach outstanding levels of
electromagnetic susceptibility (EMS). Similarly, extremely low electromagnetic emission (EME) is achieved by the excellent matching of
the output signals.
2.0 Key Features
Fully compatible with the ISO 11898-2 standard
Certified “Authentication on CAN Transceiver Conformance (d1.1)”
High speed (up to 1Mbit/s)
Ideally suited for 12V and 24V industrial and automotive applications
Low EME common-mode choke is no longer required
Differential receiver with wide common-mode range (+/- 35V) for high EMS
No disturbance of the bus lines with an un-powered node
Transmit data (TxD) dominant time-out function
Thermal protection
Bus pins protected against transients in an automotive environment
Silent mode in which the transmitter is disabled
Short circuit proof to supply voltage and ground
Logic level inputs compatible with 3.3V devices
3.0 Technical Characteristics
Table 1: Technical Characteristics
Symbol
Parameter
V
CANH
DC voltage at pin CANH
V
CANL
DC voltage at pin CANL
V
i(dif)(bus_dom)
Differential bus output voltage in dominant state
t
pd(rec-dom)
Propagation delay TxD to RxD
t
pd(dom-rec)
Propagation delay TxD to RxD
C
M-range
Input common-mode range for comparator
V
CM-peak
V
CM-step
Common-mode peak
Common-mode step
Conditions
0 < V
CC
< 5.25V; no time limit
0 < V
CC
< 5.25V; no time limit
42.5Ω < R
LT
< 60Ω
See Figure 7
See Figure 7
Guaranteed differential receiver threshold and
leakage current
See Figures 8 and 9 (Notes)
See Figures 8 and 9 (Notes)
Min.
-45
-45
1.5
70
100
-35
-500
-150
Max.
+45
+45
3
245
245
+35
500
150
Unit
V
V
V
ns
ns
V
mV
mV
Note: The parameters V
CM-peak
and V
CM-step
guarantee low electromagnetic emission.
AMI Semiconductor
– M-20682-003, Jun 07
www.amis.com
1
AMIS-30660 High-Speed CAN Transceiver
4.0 Ordering Information
Ordering Code (Tubes)
0CANH-002-XTD
Ordering Code (Tape)
0CANH-002-XTP
Marketing Name
AMIS 30660NGA
Package
SOIC-8 GREEN
Temp. Range
-40°C…125°C
Data Sheet
5.0 Block Diagram
V
CC
S
8
V
CC
3
Thermal
shutdown
7
TxD
1
Timer
Driver
control
6
CANH
CANL
AMIS-30660
RxD
V
REF
4
COMP
R
i(cm)
+
V
cc
/
2
5
R
i(cm)
2
PD20070607.1
GND
Figure 1: Block Diagram
AMI Semiconductor
– M-20682-003, Jun 07
www.amis.com
2
AMIS-30660 High-Speed CAN Transceiver
6.0 Typical Application
6.1 Application Schematic
Data Sheet
VBAT
IN
5V-reg
OUT
V
CC
S
8
3
7
60
60
47 nF
V
CC
CANH
VREF
CANL
60
GND
CAN
controller
RxD
TxD
4
AMIS-
30660
2
5
6
CAN
BUS
1
60
47 nF
PC20040918.2
GND
Figure 2: Application Diagram
6.2 Pin Description
6.2.1. Pin Out (Top View)
TxD
GND
V
CC
RxD
1
8
S
CANH
CANL
V
REF
AMIS-
30660
Figure 3: Pin Configuration
2
3
4
7
6
5
PC20040918.3
AMI Semiconductor
– M-20682-003, Jun 07
www.amis.com
3
AMIS-30660 High-Speed CAN Transceiver
6.3 Pin Description
Table 2: Pin Out
Pin Name Description
1
TxD Transmit data input; low input
dominant driver; internal pull-up current
2
GND Ground
3
V
CC
Supply voltage
4
RxD Receive data output; dominant transmitter→ low output
5
V
REF
Reference voltage output
6
CANL Low-level CAN bus line (low in dominant mode)
7
CANH High-level CAN bus line (high in dominant mode)
8
S
Silent mode control input; internal pull-down current
Data Sheet
7.0 Functional Description
7.1 Operating Modes
The behavior of AMIS-30660 under various conditions is illustrated in Table 3 below. In case the device is powered, one of two
operating modes can be selected through pin S.
Table 3: Functional table of AMIS30660; X = don’t care
VCC
pin TxD
pin S
pin CANH
pin CANL
Bus state
pin RxD
4.75 to 5.25.V
4.75 to 5.25.V
4.75 to 5.25.V
VCC<PORL (unpowered)
PORL<VCC<4.75V
0
X
1 (or floating)
X
>2V
0 (or floating)
1
X
X
X
High
VCC/2
VCC/2
0V<CANH<VCC
0V<CANH<VCC
Low
VCC/2
VCC/2
0V<CANL<VCC
0V<CANL<VCC
Dominant
Recessive
Recessive
Recessive
Recessive
0
1
1
1
1
7.1.1. High-Speed Mode
If pin S is pulled low (or left floating), the transceiver is in its high-speed mode and is able to communicate via the bus lines. The signals
are transmitted and received to the CAN controller via the pins TxD and RxD. The slopes on the bus line outputs are optimized to give
extremely low electromagnetic emissions.
7.1.2. Silent Mode
In silent mode, the transmitter is disabled. All other IC functions continue to operate. The silent mode is selected by connecting pin S to
VCC and can be used to prevent network communication from being blocked, due to a CAN controller which is out of control.
7.2 Over-temperature Detection
A thermal protection circuit protects the IC from damage by switching off the transmitter if the junction temperature exceeds a value of
approximately 160°C. Because the transmitter dissipates most of the power, the power dissipation and temperature of the IC is
reduced. All other IC functions continue to operate. The transmitter off-state resets when pin TxD goes high. The thermal protection
circuit is particularly necessary when a bus line short-circuits.
7.3 TxD Dominant Time-out Function
A TxD dominant time-out timer circuit prevents the bus lines from being driven to a permanent dominant state (blocking all network
communication) if pin TxD is forced permanently low by a hardware and/or software application failure. The timer is triggered by a
negative edge on pin TxD. If the duration of the low-level on pin TxD exceeds the internal timer value t
dom
, the transmitter is disabled,
driving the bus into a recessive state. The timer is reset by a positive edge on pin TxD.
AMI Semiconductor
– M-20682-003, Jun 07
4
www.amis.com
AMIS-30660 High-Speed CAN Transceiver
7.4 Fail-safe Features
Data Sheet
A current-limiting circuit protects the transmitter output stage from damage caused by an accidental short-circuit to either positive or
negative supply voltage, although power dissipation increases during this fault condition.
The pins CANH and CANL are protected from automotive electrical transients (according to “ISO 7637”; see Figure 4). Pin TxD is
pulled high internally should the input become disconnected.
8.0 Electrical Characteristics
8.1 Definitions
All voltages are referenced to GND (pin 2). Positive currents flow into the IC. Sinking current means the current is flowing into the pin;
sourcing current means the current is flowing out of the pin.
8.2 Absolute Maximum Ratings
Stresses above those listed in the following table may cause permanent device failure. Exposure to absolute maximum ratings for
extended periods may affect device reliability.
Table 4: Absolute Maximum Ratings
Symbol
Parameter
V
CC
Supply voltage
V
CANH
DC voltage at pin CANH
V
CANL
DC voltage at pin CANL
V
TxD
DC voltage at pin TxD
V
RxD
DC voltage at pin RxD
V
S
DC voltage at pin S
V
REF
DC voltage at pin V
REF
V
tran(CANH)
Transient voltage at pin CANH
V
tran(CANL)
Transient voltage at pin CANL
V
esd
Latch-up
T
stg
T
amb
T
junc
Notes:
1.
2.
3.
4.
Conditions
0 < V
CC
< 5.25V; no time limit
0 < V
CC
< 5.25V; no time limit
Electrostatic discharge voltage at all pins
Static latch-up at all pins
Storage temperature
Ambient temperature
Maximum junction temperature
Note 1
Note 1
Note 2
Note 4
Note 3
Min.
-0.3
-45
-45
-0.3
-0.3
-0.3
-0.3
-150
-150
-4
-500
-55
-40
-40
Max.
+7
+45
+45
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.3
+150
+150
+4
+500
100
+155
+125
+150
Unit
V
V
V
V
V
V
V
V
V
kV
V
mA
°C
°C
°C
Applied transient waveforms in accordance with ISO 7637 part 3, test pulses 1, 2, 3a, and 3b (see Figure 4).
Standardized human body model ESD pulses in accordance to MIL883 method 3015.7.
Static latch-up immunity: static latch-up protection level when tested according to EIA/JESD78.
Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3-1993.
8.3 Thermal Characteristics
Table 5: Thermal Characteristics
Symbol
Parameter
R
th(vj-a)
Thermal resistance from junction to ambient in SO8 package
R
th(vj-s
)
Thermal resistance from junction to substrate of bare die
Conditions
In free air
In free air
Value
150
45
Unit
K/W
K/W
AMI Semiconductor
– M-20682-003, Jun 07
5
www.amis.com
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