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1.0SMB39CA

瞬态抑制二极管, 1000W, 37.05V, 40.95V, 1V, 33.3uA, 18.6A, 53.9V

器件类别:分立半导体    瞬态抑制二极管   

厂商名称:LGE

厂商官网:http://www.luguang.cn/web_en/index.html

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器件参数
参数名称
属性值
封装类型
Case Style
SMB
Ppk(W)
1000
MIN_(V)
37.05
MAX_(V)
40.95
Vwm_(V)
1
Ir_(uA)
33.3
Ippm_(A)
18.6
Vc_(V)
53.9
class
Diodes
文档预览
1.0SMB Series
Breakdown Voltage: 6.8 to 75 V
Peak Pulse Power: 1000 W
Features
Surface Mount
Transient Voltage Suppressors
SMB/ DO-214AA
0.191 [4.85]
0.171 [4.35]
Glass passivated chip
1000 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty
cycle):0.01 %
Low leakage
Uni and Bidirectional unit
Excellent clamping capability
Very fast response time
RoHS compliant
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: Solderable per MIL-STD-750, method
2026
Polarity: Color band denotes cathode end
except Bipolar
Mounting position: Any
0.087 [2.20]
0.078 [1.96]
0.148 [3.75]
0.130 [3.30]
Mechanical Data
0.012 [0.30]
0.006 [0.15]
0.096 [2.44]
0.084 [2.13]
0.008 [0.20]
0
[0.00]
0.217 [5.50]
0.201 [5.10]
0.059 [1.51]
0.030 [0.75]
Maximum Ratings(T
A
=25℃ unless otherwise noted)
Parameter
Peak power dissipation with a 10/1000μs waveform
(1)
Peak pulse current wih a 10/1000μs waveform
(1)
Power dissipation on infinite heatsink at T
L
= 75 °C
Peak forward surge current, 8.3 ms single half sine-
wave unidirectional only
(2)
Maximum instantaneous forward voltage at 50 A for
(3)
unidirectional only
Operating junction and storage temperature range
Note:
(1)Non-repetitive current pulse per Fig.5 and derated above T
A
= 25 °C per Fig.1
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3)V
F
<3.5V for devices of V
BR
<50V.
Value
Symbol
P
PP
1000
I
PP
See Next Table
P
D
5.0
I
FSM
V
F
T
J
, T
STG
100
3.5/5.0
- 55 to +150
Unit
W
A
W
A
V
°C
Revision:20170701-P1
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1.0SMB Series
Ratings and Characteristics Curves (T
A
=25℃ unless otherwise noted)
Peak Pulse Derating in Percentage of Peak
Power or Current, (%)
AVERAGE FORWARD CURRENT, (A)
AMBIENT TEMPERATURE , (℃)
100
0
75
100
100
Peak Forward Surge Current, (A)
1
80
T
100
J
= T
J
max.
25
100
0
100
22
8.3 ms Single Half Sine-Wave
150
60
50
40
25
20
0
0
25
50
75
100
125
150
175
0
1
10
Number of Cycles at 60 Hz
100
Ambient Temperature ,T
A
(℃)
Fig. 1 - Pulse Derating Curve
5.0
100
Fig. 2 - Maximum Non-Repetitive
Surge Current
0.1
1000
10
0
Steady State Power Dissipation, (W)
5
5
0
3.0
20
1
75
4.0
##
2.0
1
1.0
0.0
0
25
50
75
100
125
150
175
0.1
0.1
1
10
Pulse Width ,t
d
(μs)
100
1000
Lead Temperature , T
L
(℃)
Fig. 3 - Steady State Power Derating Curve
10000
Tr=10μs
Peak Value
(Ipp)
T
J
= 25
°C
Pulse Width (td) is defined as the
point where the peak current
0
0
decays to 50 % of Ipp
Fig. 4 - Peak Pulse Power Rating Curve
Bi-directional
@zero bias
100
5
1000
Junction Capacitance,C
J
(pF)
450
130
450
@V
RWM
7000
5
Uni-directional
@zero bias
Peak Pulse Current , (% )
50
td
0
0.2
100
Half
0.5
= Ipp
76
Value
1
2
50
1.5
33
10/1000 μsec.
Waveform
2
as defined by R.E.A.
23
3
13
4
10
1
2
Time , (ms)
3
100
4300
70
Uni-directional
5
4500
450
15
450
11
Bi-directional
@V
RWM
10
100
1000
10
5
4100
1
0
4
T
J
=25
°C
f=1.0MHz
1
Reverse Breakdown Voltage,V
BR
(V)
Fig. 5 - Pulse Waveform
Fig. 6 - Typical Junction Capacitance
Revision:20170701-P1
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1.0SMB Series
Electrical Characteristics(T
A
=25℃ unless otherwise noted)
Part Number
(Uni)
Part Number
(Bi)
Device
Marking
Code
Uni
1.0SMB6.8A
1.0SMB7.5A
1.0SMB8.2A
1.0SMB9.1A
1.0SMB10A
1.0SMB11A
1.0SMB12A
1.0SMB13A
1.0SMB15A
1.0SMB16A
1.0SMB18A
1.0SMB20A
1.0SMB22A
1.0SMB24A
1.0SMB27A
1.0SMB30A
1.0SMB33A
1.0SMB36A
1.0SMB39A
1.0SMB43A
1.0SMB47A
1.0SMB51A
1.0SMB56A
1.0SMB62A
1.0SMB68A
1.0SMB75A
1.0SMB6.8CA
1.0SMB7.5CA
1.0SMB8.2CA
1.0SMB9.1CA
1.0SMB10CA
1.0SMB11CA
1.0SMB12CA
1.0SMB13CA
1.0SMB15CA
1.0SMB16CA
1.0SMB18CA
1.0SMB20CA
1.0SMB22CA
1.0SMB24CA
1.0SMB27CA
1.0SMB30CA
1.0SMB33CA
1.0SMB36CA
1.0SMB39CA
1.0SMB43CA
1.0SMB47CA
1.0SMB51CA
1.0SMB56CA
1.0SMB62CA
1.0SMB68CA
1.0SMB75CA
A10A
A10B
A10C
A10D
A10E
A10F
A10G
A10H
A10I
A10J
A10K
A10L
A10M
A10N
A10O
A10P
A10Q
A10R
A10S
A10T
A10U
A10V
A10W
A10X
A10Y
A10Z
Bi
N10A
N10B
N10C
N10D
N10E
N10F
N10G
N10H
N10I
N10J
N10K
N10L
N10M
N10N
N10O
N10P
N10Q
N10R
N10S
N10T
N10U
N10V
N10W
N10X
N10Y
N10Z
Maximum Working
Maximum Maximum
Reverse Peak Reverse
Reverse
Clamping
Leakage I
R
Voltage
Surge
Voltage
V
RWM
Current I
PP
V
C
@I
PP
@V
RWM
(V)
(A)
(V)
(uA)
Min (V) Max (V) I
T
(mA)
Breakdown Voltage V
BR
@I
T
6.46
7.13
7.79
8.65
9.50
10.45
11.40
12.35
14.25
15.20
17.10
19.00
20.90
22.80
25.65
28.50
31.35
34.20
37.05
40.85
44.65
48.45
53.20
58.90
64.60
71.25
7.14
7.88
8.61
9.56
10.50
11.55
12.60
13.65
15.75
16.80
18.90
21.00
23.10
25.20
28.35
31.50
34.65
37.80
40.95
45.15
49.35
53.55
58.80
65.10
71.40
78.75
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
900
400
180
45
8
4
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
5.8
6.4
7.0
7.8
8.6
9.4
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
47.8
53.0
58.1
64.1
95.2
88.5
82.6
74.6
69.0
64.1
59.9
54.9
47.2
44.4
39.7
36.1
32.7
30.1
26.7
24.2
21.9
20.0
18.6
16.9
15.4
14.3
13.0
11.8
10.9
9.7
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77.0
85.0
92.0
103.0
1. Add suffix 'C 'or ' CA ' after part number to specify Bi-directional devices
2. For Bi-Directional devices having V
R
of 10 volts and under, the I
R
limit is double
Note:
Revision:20170701-P1
ht
t
p
:
//
www.lgesem i
.c
o
m
mail:lge@lgesemi.com
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