FZ06 / F0062PA200SA
preliminary datasheet
flowPHASE0
Features
●
Trench Fieldstop IGBT
3
technology
●
2-clip housing in 12mm and 17mm height
●
Compact and low inductance design
600V/200A
flow0 housing
Target Applications
●
Motor Drive
●
UPS
Schematic
Types
●
FZ062PA200SA
●
F0062PA200SA
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
V
CE
I
C
I
Cpulse
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°C
V
GE
=15V
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
600
105
600
152
231
±20
5
360
175
V
A
A
W
V
μs
V
°C
Inverter Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=25°C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
600
83
400
97
148
175
V
A
A
W
°C
copyright Vincotech
1
Revision: 1
FZ06 / F0062PA200SA
preliminary datasheet
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+150
°C
°C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
V
mm
mm
copyright Vincotech
2
Revision: 1
FZ06 / F0062PA200SA
preliminary datasheet
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
R
thJH
Thermal grease
thickness≤50um
λ
= 1 W/mK
±15
480
200
Tj=25°C
f=1MHz
0
25
Tj=25°C
Rgoff=4
Ω
Rgon=4
Ω
±15
300
200
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
V
CE
=V
GE
15
0
20
600
0
0,0032
200
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
1
5,8
1,68
1,99
6,5
2,3
1,25
0
2
209
222
32
38
267
301
82
98
1,57
2,56
5,8
7,66
12335
769
366
1240
0,62
nC
K/W
pF
1000
V
V
mA
nA
Ω
ns
mWs
Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
V
F
I
RRM
t
rr
Q
rr
di(rec)max
/dt
Erec
R
thJH
Thermal grease
thickness≤50um
λ
= 1 W/mK
Rgoff=4
Ω
0
300
200
200
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1
1,73
1,7
160,7
209,6
117
142,4
9,51
17,79
5385
4096
2,32
4,34
0,98
2,3
V
A
ns
μC
A/μs
mWs
K/W
copyright Vincotech
3
Revision: 1
FZ06 / F0062PA200SA
preliminary datasheet
Output Inverter
Figure 1
Typical output characteristics
I
C
= f(V
CE
)
600
I
C
(A)
I
C
(A)
Output inverter IGBT
Figure 2
Typical output characteristics
I
C
= f(V
CE
)
600
Output inverter IGBT
500
500
400
400
300
300
200
200
100
100
0
0
1
2
3
4
V
CE
(V)
5
0
0
1
2
3
4
V
CE
(V)
5
At
t
p
=
T
j
=
V
GE
from
350
μs
25
°C
7 V to 17 V in steps of 1 V
At
t
p
=
T
j
=
V
GE
from
350
μs
150
°C
7 V to 17 V in steps of 1 V
Figure 3
Typical transfer characteristics
I
C
= f(V
GE
)
200
I
C
(A)
Output inverter IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
600
I
F
(A)
Output inverter FRED
T
j
= 25°C
500
160
400
120
300
T
j
= T
jmax
-25°C
T
j
= T
jmax
-25°C
80
200
T
j
= 25°C
40
100
0
0
1
2
3
4
5
6
7
8
V
GE
(V)
9
10
0
0
0,5
1
1,5
2
2,5
V
F
(V)
3
At
t
p
=
V
CE
=
350
10
μs
V
At
t
p
=
350
μs
copyright Vincotech
4
Revision: 1
FZ06 / F0062PA200SA
preliminary datasheet
Output Inverter
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I
C
)
15
E (mWs)
Output inverter IGBT
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R
G
)
15
E (mWs)
Output inverter IGBT
E
on High T
E
off High T
12
12
E
on Low T
E
off High T
E
off Low T
9
9
E
off Low T
6
6
E
on High T
3
3
E
on Low T
0
0
100
200
300
I
C
(A)
400
0
0
4
8
12
16
R
G
(
Ω
)
20
With an inductive load at
T
j
=
°C
25/150
V
CE
=
300
V
V
GE
=
±15
V
R
gon
=
2
Ω
R
goff
=
2
Ω
With an inductive load at
T
j
=
°C
25/150
V
CE
=
300
V
V
GE
=
±15
V
I
C
=
200
A
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E
rec
= f(I
C
)
8
E (mWs)
Output inverter IGBT
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E
rec
= f(R
G
)
8
E (mWs)
Output inverter IGBT
E
rec
6
6
T
j
= T
jmax
-25°C
T
j
= T
jmax
-25°C
4
4
T
j
= 25°C
E
rec
T
j
= 25°C
E
rec
2
2
E
rec
0
0
100
200
300
I
C
(A)
400
0
0
4
8
12
16
R
G
(
Ω
)
20
With an inductive load at
T
j
=
25/150
°C
V
CE
=
300
V
V
GE
=
±15
V
R
gon
=
2
Ω
With an inductive load at
T
j
=
25/150
°C
V
CE
=
300
V
V
GE
=
±15
V
I
C
=
200
A
copyright Vincotech
5
Revision: 1
