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1014-6A

RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 55LV, 2 PIN

器件类别:分立半导体    晶体管   

厂商名称:ADPOW

厂商官网:http://www.advancedpower.com/

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器件参数
参数名称
属性值
包装说明
FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code
unknown
Is Samacsys
N
其他特性
HIGH RELIABILITY
最大集电极电流 (IC)
1 A
配置
SINGLE
最高频带
L BAND
JESD-30 代码
R-CDFM-F2
元件数量
1
端子数量
2
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
极性/信道类型
NPN
认证状态
Not Qualified
表面贴装
YES
端子形式
FLAT
端子位置
DUAL
晶体管应用
AMPLIFIER
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
1014-6A
6 Watts, 28 Volts, Class C
Microwave 1000 - 1400 MHz
GENERAL DESCRIPTION
The 1014-6A is an internally matched, COMMON BASE transistor capable of
providing 6 watts of CW RF Output power across the 1000-1400 MHz band.
This transistor is specifically designed for microwave broadband applications.
It utilizes gold metalization and diffused ballasting to provide high reliability
and superior ruggedness
.
CASE OUTLINE
55LV-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C
19
Maximum Voltage and Current
Collector to Base Voltage (BV
ces
)
50
Emitter to Base Voltage (BV
ebo
)
3.5
Collector Current (I
c
)
1.0
Maximum Temperatures
Storage Temperature
-65 to +200
Operating Junction Temperature
+200
W
V
V
A
°C
°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL
P
out
P
in
P
g
η
c
VSWR
CHARACTERISTICS
Power Output
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
TEST CONDITIONS
F = 1150 MHz
V
cc
= 35 Volts
Pulse width = 20 µs
LTDF = 1%
MIN
6.0
1.2
7.0
7.5
40
10:1
TYP
MAX
UNITS
W
W
dB
%
FUNCTIONAL CHARACTERISTICS @ 25°C
BV
ebo
BV
ces
I
cbo
C
ob
h
FE
θjc
1
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector Leakage Current
Capacitance
DC – Current Gain
Thermal Resistance
Ie = 3.0 mA
Ic = 25 mA
Vcb = 28 V
Vcb = 28 V, f = 1 MHz
Vce = 5V, Ic = 100 mA
3.5
50
1.0
6.5
20
100
9.0
V
V
mA
pF
°C/W
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION
PLEASE CHECK OUR WEB SITE AT
WWW.GHZ.COM
OR CONTACT OUR FACTORY DIRECTLY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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