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15ETL06S

15 A, 600 V, SILICON, RECTIFIER DIODE

器件类别:分立半导体    二极管   

厂商名称:International Rectifier ( Infineon )

厂商官网:http://www.irf.com/

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器件:15ETL06S

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器件参数
参数名称
属性值
是否Rohs认证
不符合
零件包装代码
D2PAK
包装说明
R-PSSO-G2
针数
3
Reach Compliance Code
compliant
Is Samacsys
N
其他特性
FREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE, UL RECOGNIZED
应用
HYPERFAST SOFT RECOVERY
外壳连接
CATHODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
0.92 V
JEDEC-95代码
TO-263AB
JESD-30 代码
R-PSSO-G2
JESD-609代码
e0
湿度敏感等级
1
最大非重复峰值正向电流
250 A
元件数量
1
相数
1
端子数量
2
最高工作温度
175 °C
最大输出电流
15 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
225
认证状态
Not Qualified
最大重复峰值反向电压
600 V
最大反向恢复时间
0.27 µs
表面贴装
YES
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子位置
SINGLE
处于峰值回流温度下的最长时间
30
Base Number Matches
1
文档预览
Bulletin PD-20695 rev. B 02/04
15ETL06
15ETL06S
15ETL06-1
15ETL06FP
Ultra-low V
F
Hyperfast Rectifier for Discontinuous Mode PFC
Features
Benchmark Ultra-low Forward Voltage Drop
Hyperfast Recovery Time
Low Leakage Current
175°C Operating Junction Temperature
Fully Isolated package (V
INS
= 2500 V
RMS
)
UL E78996 approved
V
F
= 0.99V typ.
I
F(AV)
= 15Amp
V
R
= 600V
Description
State of the art, ultra-low V
F
, soft-switching Hyperfast Rectifiers optimized for Discontinuous (Critical) Mode (DCM)
Power Factor Correction (PFC).
The minimised conduction loss, optimized stored charge and low recovery current minimize the switching losses and
reduce over dissipation in the switching element and snubbers.
The device is also intended for use as a free wheeling diode in power supplies and other power switching
applications.
Applications
AC-DC SMPS 70W-400W
e.g. Laptop & Printer AC Adaptors, Desktop PC, TV & Monitor, Games units and DVD AC-DC power supplies.
Absolute Maximum Ratings
Parameters
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
STG
Peak Repetitive Reverse Voltage
Average Rectified Forward Current @ T
C
= 154°C
@ T
C
= 120°C (FULLPACK)
Non Repetitive Peak Surge Current @ T
J
= 25°C
Peak Repetitive Forward Current
Operating Junction and Storage Temperatures
250
30
- 65 to 175
°C
Max
600
15
Units
V
A
Case Styles
15ETL06
15ETL06S
15ETL06-1
15ETL06FP
Base
Cathode
2
Base
Cathode
2
2
1
1
3
3
1
3
1
3
Cathode
Anode
Cathode
Anode
N/C
Anode
N/C
Anode
TO-220AC
www.irf.com
D PAK
2
TO-262
TO-220 FULLPACK
1
15ETL06, 15ETL06S, 15ETL06-1, 15ETL06FP
Bulletin
PD-20695 rev. B 02/04
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
V
BR
, V
r
V
F
Breakdown Voltage,
Blocking Voltage
Forward Voltage
Min Typ Max Units Test Conditions
600
-
-
-
-
V
V
V
µA
µA
pF
nH
I
R
= 100µA
I
F
= 15A, T
J
= 25°C
I
F
= 15A, T
J
= 150°C
V
R
= V
R
Rated
T
J
= 150°C, V
R
= V
R
Rated
V
R
= 600V
Measured lead to lead 5mm from package body
0.99 1.05
0.85 0.92
0.1
15
20
8.0
10
120
-
-
I
R
Reverse Leakage Current
-
-
C
T
L
S
Junction Capacitance
Series Inductance
-
-
Dynamic Recovery Characteristics @ T
C
= 25°C (unless otherwise specified)
Parameters
t
rr
Reverse Recovery Time
Min Typ Max Units Test Conditions
-
-
-
-
60
190
220
320
19
26
2.2
4.3
120
270
-
-
-
-
-
-
µC
A
ns
I
F
= 1A, di
F
/dt = 100A/µs, V
R
= 30V
I
F
= 15A, di
F
/dt = 100A/µs, V
R
= 30V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
= 15A
di
F
/dt = 200A/µs
V
R
= 390V
I
RRM
Peak Recovery Current
-
-
Q
rr
Reverse Recovery Charge
-
-
Thermal - Mechanical Characteristics
Parameters
T
J
T
Stg
R
thJC
Max. Junction Temperature Range
Max. Storage Temperature Range
Thermal Resistance, Junction to Case
Per Leg
Min
-
- 65
-
-
-
-
-
-
Typ
-
-
1.0
3.0
-
0.5
2.0
0.07
-
-
Max
175
175
1.3
3.5
70
-
-
-
12
10
Units
°C
°C/W
Fullpack (Per Leg)
R
thJA
R
thCS
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heatsink
Weight
Per Leg
g
(oz)
Kg-cm
lbf.in
Mounting Torque
6.0
5.0
Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
2
www.irf.com
15ETL06, 15ETL06S, 15ETL06-1, 15ETL06FP
Bulletin
PD-20695 rev. B 02/04
100
100
Reverse Current - I
R
(µA)
Tj = 175˚C
150˚C
125˚C
10
1
0.1
0.01
100˚C
75˚C
50˚C
25˚C
Instantaneous Forward Current - I
F
(A)
T = 175˚C
J
0.001
0
100
200
300
400
500
600
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
10
T = 150˚C
J
T = 25˚C
J
Junction Capacitance - C
T
(pF)
100
T J = 25˚C
1
0.4
10
0.6
0.8
1
1.2
1.4
1.6
0
100
200
300
400
500
600
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
10
Thermal Impedance Z
thJC
(°C/W)
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Notes:
P
DM
t1
t2
Single Pulse
(Thermal Resistance)
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
1
10
www.irf.com
3
15ETL06, 15ETL06S, 15ETL06-1, 15ETL06FP
Bulletin
PD-20695 rev. B 02/04
10
Thermal Impedance Z
thJC
(°C/W)
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
Notes:
P
DM
t1
t2
0.1
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, Rectangular Pulse Duration (Seconds)
10
100
Fig. 5 - Max. Thermal Impedance Z
thJC
Characteristics (FULLPACK)
180
Allowable Case Temperature (°C)
Allowable Case Temperature (°C)
180
160
140
120
Square wave (D = 0.50)
80% Rated Vr applied
170
160
150
Square wave (D = 0.50)
Rated Vr applied
DC
DC
140
see note (3)
100
see note (3)
80
130
0
5
10
15
20
25
Average Forward Current - I
F
(AV)
(A)
Fig. 6 - Max. Allowable Case Temperature
Vs. Average Forward Current
0
5
10
15
20
25
Average Forward Current - I
F
(AV)
(A)
Fig. 7 - Max. Allowable Case Temperature
Vs. Average Forward Current (FULLPACK)
25
Average Power Loss ( Watts )
20
15
10
5
0
DC
RMS Limit
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
(3)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss =
I
F(AV)
x V
FM
@ (I
F(AV)
/
D)
(see Fig. 8);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D);
I
R
@ V
R1
= rated V
R
Average Forward Current - I
F
(AV)
(A)
Fig. 8 - Forward Power Loss Characteristics
0
5
10
15
20
25
4
www.irf.com
15ETL06, 15ETL06S, 15ETL06-1, 15ETL06FP
Bulletin
PD-20695 rev. B 02/04
500
IF = 30 A
IF = 15 A
9000
8000
7000
6000
Qrr ( nC )
IF = 30 A
IF = 15 A
400
trr ( ns )
300
5000
4000
3000
200
100
V
R
= 390V
T
J
= 125˚C
T
J
= 25˚C
2000
1000
0
100
V
R
= 390V
T
J
= 125˚C
T
J
= 25˚C
di
F
/dt (A/µs )
Fig. 9 - Typical Reverse Recovery vs. di
F
/dt
0
100
1000
1000
di
F
/dt (A/µs )
Fig. 10 - Typical Stored Charge vs. di
F
/dt
Reverse Recovery Circuit
V
R
= 200V
0.01
L = 70µH
D.U.T.
di
F
/dt
dif/dt
ADJUST
D
G
IRFP250
S
Fig. 11- Reverse Recovery Parameter Test Circuit
www.irf.com
5
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参数对比
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型号 15ETL06S ERJ-3EKF3001V
描述 15 A, 600 V, SILICON, RECTIFIER DIODE Evaluation Board (ADM00805) User’s Guide
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