1F18,1F18 pdf中文资料,1F18引脚图,1F18电路-Datasheet-电子工程世界

器件参数

参数名称

属性值

是否Rohs认证

符合

厂商名称

Galaxy Microelectronics

零件包装代码

R-1

Reach Compliance Code

unknown

应用

FAST RECOVERY

外壳连接

ISOLATED

配置

SINGLE

二极管元件材料

SILICON

二极管类型

RECTIFIER DIODE

最大正向电压 (VF)

1.8 V

JESD-30 代码

O-PALF-W2

最大非重复峰值正向电流

25 A

元件数量

相数

端子数量

最高工作温度

125 °C

最低工作温度

-55 °C

最大输出电流

0.5 A

封装主体材料

PLASTIC/EPOXY

封装形状

ROUND

封装形式

LONG FORM

最大重复峰值反向电压

1800 V

最大反向电流

5 µA

最大反向恢复时间

0.3 µs

反向测试电压

1800 V

表面贴装

端子形式

WIRE

端子位置

AXIAL

类别

VRRM (V) max

1800

IF (A) max

0.5

VF (V) max

1.8

Condition1_IF (A)

0.5

IFSM (A) max

IR (uA) max

Condition2_VR (V)

1800

trr (ns) max

300

AEC Qualified

最高工作温度

125

最低工作温度

-55

是否无铅

否

符合Reach

YES

符合RoHS

YES

Package Outlines

R-1

文档预览

FEATURES

GALAXY ELECTRICAL

1F10 --- 1F20

VOLTAGE RANGE: 1000 ---

2000

CURRENT: 0.5 A

PHOTO FLASH RECTIFIERS

Fast switching

Diffused junction

Low leakage

Low forward voltage drop

High current capability

Easily cleaned with alcohol,Isopropanol and

similar solvents

R-1

MECHANICAL DATA

Case: JEDEC R--1,molded plastic

Terminals: Axial lead ,solderable per

MIL- STD-202,Method 208

Polarity: Color band denotes cathode

Weight: 0.007ounces, 0.20 grams

Mounting position: Any

Dimensions in millimeters

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

ambient temperature unless otherwise specified.

Single phase,half wave,60Hz,resistive or inductive load. For capacitive load,derate by 20%.

1F10

1F12 1F14 1F15

1F16 1F18

1F20

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forw ard rectified current

9.5mm lead length,

=75

UNITS

RRM

RMS

F(AV)

1000

700

1000

1200

840

1200

1400

980

1400

1500

0.5

1600

1800

2000

1050 1120

1260 1400

Peak forw ard surge current

8.3ms

single half-sine-w ave

superimposed on rated load

Maximum instantaneous forw ard voltage

@ 0.5 A

Maximum reverse current

at rated DC blocking voltage

Maximum reverse recovery time

Typical junction capacitance

=25

=100

(NOTE1)

(NOTE2)

FSM

STG

25.0

1.8

5.0

100.0

300

-55 ---- + 125

-55 ---- + 150

μA

Operating junction temperature range

Storage temperature range

2. Mersured at 1MH

and applied rev erse v oltage of 4.0V.

NOTE: 1. Rev erse recov ery test conditions:I

=0.5A,I

=-1.0A,I

=-0.25A.

www.galaxycn.com

Document Number

1782101

GALAXY ELECTRICAL

RATINGS AND CHARACTERISTIC CURVES

1F10 --- 1F20

FIG.1 -- FORWARD DERATING CURVE

AVERAGE FORWARD RECTIFIED CURRENT

FIG.2 -- PEAK FORWARD SURGE CURRENT

0.5

0.4

PEAK FORWARD SURGE CURRENT

AMPERES

0.3

8.3ms Single Half

Sine - Wave

0.2

0.1

Single Phase

Half W ave 60H

Resistive or

Inductive Load

100

125

150

175

200

100

AMBIENT TEMPERATURE,

NUMBER OF CYCLES AT 60Hz

FIG.3 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC

N 1.

+ 0 .5 A

D.U.T.

(+)

25VDC

(approx)

(-)

PULSE

GENERATOR

(NOTE2)

-0 .2 5 A

NONIN-

DUCTIVE

OSCILLOSCOPE

(NOTE 1)

-1 .0 A

NOTES:1.RISE TIME = 7ns MAX.INPUT IMPE

DANCE =1M . 22pF.

Ggggggggg

2.RISE TIME =10ns M

AX.SOURCE IMP

EDANCE=50 .

1 cm

SET TIM BASE FOR 50/100 ns/cm

www.galaxycn.com

Document Number

1782101

GALAXY ELECTRICAL

参数对比

与1F18相近的元器件有：1F10、1F12、1F14、1F15、1F16、1F20。描述及对比如下：

型号	1F18	1F10	1F12	1F14	1F15	1F16	1F20
描述	0.5A,1800V,Fast Recovery Rectifiers, Diodes, Single, 1800V, 0.5A, 1.8V, 0.5A, 25A	0.5A,1000V,Fast Recovery Rectifiers, Diodes, Single, 1000V, 0.5A, 1.8V, 0.5A, 25A	0.5A,1200V,Fast Recovery Rectifiers, Diodes, Single, 1200V, 0.5A, 1.8V, 0.5A, 25A	0.5A,1400V,Fast Recovery Rectifiers, Diodes, Single, 1400V, 0.5A, 1.8V, 0.5A, 25A	0.5A,1500V,Fast Recovery Rectifiers, Diodes, Single, 1500V, 0.5A, 1.8V, 0.5A, 25A	0.5A,1600V,Fast Recovery Rectifiers, Diodes, Single, 1600V, 0.5A, 1.8V, 0.5A, 25A	0.5A,2000V,Fast Recovery Rectifiers, Diodes, Single, 2000V, 0.5A, 1.8V, 0.5A, 25A
厂商名称	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics
零件包装代码	R-1	R-1	R-1	R-1	R-1	R-1	R-1
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
应用	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
最大正向电压 (VF)	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
JESD-30 代码	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
最大非重复峰值正向电流	25 A	25 A	25 A	25 A	25 A	25 A	25 A
元件数量	1	1	1	1	1	1	1
相数	1	1	1	1	1	1	1
端子数量	2	2	2	2	2	2	2
最大输出电流	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
最大重复峰值反向电压	1800 V	1000 V	1200 V	1400 V	1500 V	1600 V	2000 V
最大反向电流	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA
最大反向恢复时间	0.3 µs	0.3 µs	0.3 µs	0.3 µs	0.3 µs	0.3 µs	0.3 µs
反向测试电压	1800 V	1000 V	2000 V	1400 V	1500 V	1600 V	2000 V
表面贴装	NO	NO	NO	NO	NO	NO	NO
端子形式	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
端子位置	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
VRRM (V) max	1800	1000	1200	1400	1500	1600	2000
IF (A) max	0.5	0.5	0.5	0.5	0.5	0.5	0.5
VF (V) max	1.8	1.8	1.8	1.8	1.8	1.8	1.8
Condition1_IF (A)	0.5	0.5	0.5	0.5	0.5	0.5	0.5
IFSM (A) max	25	25	25	25	25	25	25
IR (uA) max	5	5	5	5	5	5	5
Condition2_VR (V)	1800	1000	1200	1400	1500	1600	2000
trr (ns) max	300	300	300	300	300	300	300
AEC Qualified	NO	NO	NO	NO	NO	NO	NO
是否无铅	否	否	否	否	否	否	否
符合Reach	YES	YES	YES	YES	YES	YES	YES
符合RoHS	YES	YES	YES	YES	YES	YES	YES
Package Outlines	R-1	R-1	R-1	R-1	R-1	R-1	R-1
是否Rohs认证	符合	符合	符合	符合	符合	符合	-
最高工作温度	125	125	125	125	125	125	125
最低工作温度	-55	-55	-55	-55	-55	-55	-55