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1N4935A1

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-204AL, DO-41, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

下载文档
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Taiwan Semiconductor
包装说明
O-PALF-W2
Reach Compliance Code
compliant
ECCN代码
EAR99
Is Samacsys
N
其他特性
HIGH RELIABILITY
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JEDEC-95代码
DO-204AL
JESD-30 代码
O-PALF-W2
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
1 A
封装主体材料
PLASTIC/EPOXY
封装形状
ROUND
封装形式
LONG FORM
最大重复峰值反向电压
200 V
最大反向恢复时间
0.2 µs
表面贴装
NO
端子形式
WIRE
端子位置
AXIAL
Base Number Matches
1
文档预览
1N4933 thru 1N4937
Taiwan Semiconductor
CREAT BY ART
FEATURES
- High efficiency, Low VF
- High current capability
- High reliability
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Fast Recovery Rectifiers
MECHANICAL DATA
Case:
DO-204AL (DO-41)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight:
0.33 g (approximately)
DO-204AL (DO-41)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated VR
T
J
=25
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJA
T
J
T
STG
1N
4933
50
35
50
1N
4934
100
70
100
1N
4935
200
140
200
1.0
30
1.2
5
150
200
10
65
- 55 to +150
- 55 to +150
O
1N
4936
400
280
400
1N
4937
600
420
600
UNIT
V
V
V
A
A
V
μA
ns
pF
C/W
O
O
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note1: Pulse Test with PW=300μs, 1% Duty Cycle
C
C
Note2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Document Number: DS_D1310014
Version: F13
1N4933 thru 1N4937
Taiwan Semiconductor
CREAT BY ART
ORDERING INFORMATION
PART NO.
PACKING CODE GREEN COMPOUND
CODE
A0
1N493x
(Note 1)
A1
R0
R1
B0
Note 1: "x" defines voltage from 50V (1N4933) to 600V (1N4937)
Suffix "G"
DO-41
DO-41
DO-41
DO-41
DO-41
3,000 / Ammo box (52mm taping)
3,000 / Ammo box (26mm taping)
5,000 / 13" Paper reel
5,000 / 13" Paper reel (Reverse)
1,000 / Bulk packing
PACKAGE
PACKING
EXAMPLE
PREFERRED P/N
1N4937 A0
1N4937 A0G
PART NO.
1N4937
1N4937
PACKING CODE
A0
A0
G
Green compound
GREEN COMPOUND
CODE
DESCRIPTION
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1- MAXMUM FORWARD CURRENT
DERATING CURVE
INSTANTANEOUS REVERSE
CURRENT(μA)
1.25
100
FIG. 2- TYPICAL REVERSE CHARACTERISTICS
AVERAGE FORWARD CURRENT(A)
1
0.75
0.5
0.25
0
25
50
75
100
RESISTIVE OR
INDUCTIVE LOAD
10
TJ=125℃
1
TJ=75℃
0.1
TJ=25℃
0.01
125
150
175
0
20
40
60
80
100
120
140
AMBIENT TEMPERATURE(
o
C)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
INSTANTANEOUS FORWARD CURRENT
(A)
FIG. 3- MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT(A)
30
10
FIG. 4- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
20
1
10
8.3ms Single Half Wave
JEDEC Method
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
PULSE WIDTH-300μs
1% DUTY CYCLE
0.1
0.4
0.6
0.8
1
1.2
FORWARD VOLTAGE (V)
1.4
1.6
Document Number: DS_D1310014
Version: F13
1N4933 thru 1N4937
Taiwan Semiconductor
CREAT BY ART
FIG. 5- TYPICAL JUNCTION CAPACITANCE
100
JUNCTION CAPACITANCE (pF)
10
f=1.0MHz
Vsig=50mVp-p
1
1
10
REVERSE VOLTAGE (V)
100
PACKAGE OUTLINE DIMENSIONS
Unit (mm)
Min
2.00
0.71
25.40
4.20
25.40
Max
2.70
0.86
-
5.20
-
Unit (inch)
Min
0.079
0.028
1.000
0.165
1.000
Max
0.106
0.034
-
0.205
-
DIM.
A
B
C
D
E
MARKING DIAGRAM
P/N =
G=
YWW =
F=
Specific Device Code
Green Compound
Date Code
Factory Code
Document Number: DS_D1310014
Version: F13
1N4933 thru 1N4937
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1310014
Version: F13
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