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1N5407G

3 A, 800 V, SILICON, RECTIFIER DIODE
3 A, 800 V, 硅, 整流二极管

器件类别:分立半导体    二极管   

厂商名称:SynSemi

厂商官网:http://www.synsemi.com/

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器件参数
参数名称
属性值
厂商名称
SynSemi
Reach Compliance Code
unknow
文档预览
1N5400G - 1N5408G
PRV : 50 - 1000 Volts
Io : 3.0 Amperes
FEATURES :
*
*
*
*
*
*
Glass passivated chip
High current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
GLASS PASSIVATED JUNCTION
SILICON RECTIFIERS
DO - 201AD
1.00 (25.4)
MIN.
0.21 (5.33)
0.19 (4.83)
0.375 (9.53)
0.285 (7.24)
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 1.16 grams
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 75
°C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I
F
= 3.0 Amps.
Maximum DC Reverse Current
at rated DC Blocking Voltage
Ta = 25
°C
Ta = 100
°C
SYMBOL
1N5400G 1N5401G 1N5402G 1N5404G 1N5406G 1N5407G 1N5408G
UNIT
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
400
280
400
3.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
I
FSM
V
F
I
R
I
R(H)
C
J
R
θ
JA
T
J
T
STG
150
1.0
5.0
50
50
15
- 65 to + 175
- 65 to + 175
A
V
µA
µA
pF
°C/W
°C
°C
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0V
DC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2
Rev. 02 : March 31, 2005
RATING AND CHARACTERISTIC CURVES ( 1N5400G - 1N5408G )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
3.0
150
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
PEAK FORWARD SURGE
CURRENT, AMPERES
Ta = 25
°C
120
2.4
1.8
90
1.2
60
0.6
30
0
0
25
50
75
100
125
150
175
0
1
2
4
6
10
20
40
60
100
CASE TEMPERATURE, (
°
C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
JUNCTION CAPACITANCE, (pF)
NUMBER OF CYCLES AT 60Hz
FIG 4 . - TYPICAL JUNCTION CAPACITANCE
100
100
50
FORWARD CURRENT, AMPERES
T
J
= 25
°C
10
10
5
1.0
Pulse Width = 300
µs
2% Duty Cycle
T
J
= 25
°C
1
1
2
4
10
20
40
100
REVERSE VOLTAGE, VOLTS
0.1
FIG. 5 - TYPICAL REVERSE CHARACTERISTICS
0.01
0
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Ta = 100
ฐC
REVERSE CURRENT,
MICROAMPERES
FORWARD VOLTAGE, VOLTS
1.0
0.1
Ta = 25
ฐC
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 02 : March 31, 2005
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参数对比
与1N5407G相近的元器件有:1N5400G、1N5402G、1N5404G、1N5406G、1N5408G。描述及对比如下:
型号 1N5407G 1N5400G 1N5402G 1N5404G 1N5406G 1N5408G
描述 3 A, 800 V, SILICON, RECTIFIER DIODE 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-27
厂商名称 SynSemi SynSemi SynSemi SynSemi SynSemi SynSemi
Reach Compliance Code unknow unknow unknow unknow unknow unknow
是否Rohs认证 - 符合 符合 符合 符合 符合
配置 - SINGLE SINGLE SINGLE SINGLE SINGLE
二极管类型 - RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
最大正向电压 (VF) - 1 V 1 V 1 V 1 V 1 V
最大非重复峰值正向电流 - 200 A 200 A 200 A 200 A 200 A
元件数量 - 1 1 1 1 1
最高工作温度 - 170 °C 170 °C 170 °C 170 °C 170 °C
最大输出电流 - 3 A 3 A 3 A 3 A 3 A
最大重复峰值反向电压 - 50 V 200 V 400 V 600 V 1000 V
表面贴装 - NO NO NO NO NO
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