1N5817, 1N5818, 1N5819
Vishay General Semiconductor
Schottky Barrier Rectifiers
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
V
F
T
j
max.
1.0 A
20 V, 30 V, 40 V
25 A
0.45 V, 0.55 V, 0.60 V
125 °C
DO-204AL (DO-41)
Features
•
•
•
•
•
•
Guardring for overvoltage protection
Very small conduction losses
Extremely fast switching
Low forward voltage drop
High frequency operation
Solder Dip 260 °C, 40 seconds
Mechanical Data
Case:
DO-204AL (DO-41)
Epoxy meets UL 94V-0 Flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity:
Color band denotes the cathode end
Typical Applications
For use in low voltage high frequency inverters, free
wheeling, dc-to-dc converters, and polarity protection
applications
Maximum Ratings
T
A
= 25 °C unless otherwise specified
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum non-repetitive peak reverse voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
L
= 90 °C
Peak forward surge current, 8.3 ms single half sine-
wave superimposed on rated load
Voltage rate of change (rated V
R
)
Storage temperature range
Symbol
V
RRM
V
RMS
V
DC
V
RSM
I
F(AV
)
I
FSM
dv/dt
T
J
, T
STG
1N5817
20
14
20
24
1N5818
30
21
30
36
1.0
25
10000
- 65 to + 125
1N5819
40
28
40
48
Unit
V
V
V
V
A
A
V/µs
°C
Document Number 88525
13-Jul-05
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1N5817, 1N5818, 1N5819
Vishay General Semiconductor
Electrical Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Maximum instantaneous
forward voltage
Maximum instantaneous
forward voltage
Maximum average reverse
current at rated DC blocking
voltage
(1)
Typical junction capacitance
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Test condition
at 1.0
(1)
at 3.1
(1)
T
A
= 25 °C
T
A
= 100 °C
at 4.0 V, 1.0 MHz
Symbol
V
F
V
F
I
R
1N5817
0.450
0.750
1N5818
0.550
0.875
1.0
10
110
1N5819
0.600
0.900
Unit
V
V
mA
C
J
pF
Thermal Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Typical thermal resistance
(1)
Notes:
(1) Thermal resistance from junction to lead vertical P.C.B. mounted, 0.375" (9.5 mm) lead length with 1.5 x 1.5" (38 x 38 mm) copper pads
Symbol
R
θJA
R
θJL
1N5817
1N5818
50
15
1N5819
Unit
°C/W
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise specified)
1.0
Resistive or
Inductive Load
0.375" (9.5mm)
Lead Length
30
Peak Forward Surge Current (A)
Average Forward Current (A)
25
20
0.75
0.5
15
10
5
0
1
10
100
0.25
0
0
20
40
60
80
100
120
140
Case Temperature (
°
C)
Number of Cycles at 60 H
Z
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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Document Number 88525
13-Jul-05
1N5817, 1N5818, 1N5819
Vishay General Semiconductor
50
400
T
J
= 125°C
Pulse Width = 300µs
1% Duty Cycle
1.0
T
J
= 25°C
T
J
= 25°C
f = 1.0 MH
Z
V
sig
= 50mVp-p
Instantaneous Forward Current (A)
Junction Capacitance (pF)
10
100
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
100
100
Instantaneous Reverse Current (mA)
10
T
J
= 125°C
1.0
Transient Thermal Impedance (
°
C/W)
80
100
10
0.1
T
J
= 75°C
1
0.01
T
J
= 25°C
0.001
0
20
40
60
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t — Pulse Duration (sec.)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
Document Number 88525
13-Jul-05
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Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
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Document Number: 91000
Revision: 08-Apr-05
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