1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
T
RANS
Z
ORB
®
Transient Voltage Suppressors
FEATURES
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 1500 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty cycle):
0.01 %
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case:
Molded epoxy body over passivated junction
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
For uni-directional types the color band
denotes cathode end, no marking on bi-directional
types
Case Style 1.5KE
PRIMARY CHARACTERISTICS
V
BR
uni-directional
V
BR
bi-directional
P
PPM
P
D
I
FSM
(uni-directional only)
T
J
max.
6.8 V to 540 V
6.8 V to 440 V
1500 W
6.5 W
200 A
175 °C
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional types,
(e.g. 1.5KE440CA).
use
C
or
CA
suffix
Electrical characteristics apply in both directions.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 µs waveform
Peak pulse current with a 10/1000 µs waveform
(1)
Power dissipation on infinite heatsink at T
L
= 75 °C (Fig. 5)
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
Maximum instantaneous forward voltage at 100 A for uni-directional only
(3)
Operating junction and storage temperature range
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25 °C per Fig. 2
(2) Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum
(3) V
F
= 3.5 V for 1.5KE220 (A) and below; V
F
= 5.0 V for 1.5KE250(A) and above
(2)
(1)
SYMBOL
(Fig. 1)
P
PPM
I
PPM
P
D
I
FSM
V
F
T
J
, T
STG
LIMIT
1500
See next table
6.5
200
3.5/5.0
- 55 to + 175
UNIT
W
A
W
A
V
°C
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106
Document Number: 88301
Revision: 20-Sep-07
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
JEDEC
TYPE
NUMBER
1N6267
1N6267A
1N6268
1N6268A
1N6269
1N6269A
1N6270
1N6270A
1N6271
1N6271A
1N6272
1N6272A
1N6273
1N6273A
1N6274
1N6274A
1N6275
1N6275A
1N6276
1N6276A
1N6277
1N6277A
1N6278
1N6278A
1N6279
1N6279A
1N6280
1N6280A
1N6281
1N6281A
1N6282
1N6282A
1N6283
1N6283A
1N6284
1N6284A
1N6285
1N6285A
1N6286
1N6286A
1N6287
1N6287A
1N6288
1N6288A
1N6289
1N6289A
1N6290
1N6290A
1N6291
1N6291A
1N6292
1N6292A
GENERAL
SEMICONDUCTOR
PART NUMBER
(+)
(+)
BREAKDOWN
VOLTAGE
V
BR
AT I
T (1)
(V)
MIN
MAX
7.48
7.14
8.25
7.88
9.02
8.61
10.0
9.55
11.0
10.5
12.1
11.6
13.2
12.6
14.3
13.7
16.5
15.8
17.6
16.8
19.8
18.9
22.0
21.0
24.2
23.1
26.4
25.2
29.7
28.4
33.0
31.5
36.3
34.7
39.6
37.8
42.9
41.0
47.3
45.2
51.7
49.4
56.1
53.6
61.8
58.8
68.2
65.1
74.8
71.4
82.5
78.8
6.12
6.45
6.75
7.13
7.38
7.79
8.19
8.65
9.00
9.50
9.90
10.5
10.8
11.4
11.7
12.4
13.5
14.3
14.4
15.2
16.2
17.1
18.0
19.0
19.8
20.9
21.6
22.8
24.3
25.7
27.0
28.5
29.7
31.4
32.4
34.2
35.1
37.1
38.7
40.9
42.3
44.7
45.9
48.5
50.4
53.2
55.8
58.9
61.2
64.6
67.5
71.3
TEST
CURRENT
I
T
(mA)
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE
V
WM
(V)
5.50
5.80
6.05
6.40
6.63
7.02
7.37
7.78
8.10
8.55
8.92
9.40
9.72
10.2
10.5
11.1
12.1
12.8
12.9
13.6
14.5
15.3
16.2
17.1
17.8
18.8
19.4
20.5
21.8
23.1
24.3
25.6
26.8
28.2
29.1
30.8
31.6
33.3
34.8
36.8
38.1
40.2
41.3
43.6
45.4
47.8
50.2
53.0
55.1
58.1
60.7
64.1
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D (4)
(µA)
1000
1000
500
500
200
200
50
50
10
10
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK
PULSE
CURRENT
I
PPM (2)
(A)
139
143
128
133
120
124
109
112
100
103
92.6
96.2
86.7
89.8
78.9
82.4
68.2
70.8
63.8
66.7
56.6
59.5
51.5
54.2
47.0
49.0
43.2
45.2
38.4
40.0
34.5
36.2
31.4
32.8
28.8
30.1
26.6
27.8
24.2
25.3
22.1
23.1
20.4
21.4
18.6
19.5
16.9
17.6
15.3
16.3
13.9
14.6
MAXIMUM
CLAMPING
VOLTAGE
AT I
PPM
V
C
(V)
10.8
10.5
11.7
11.3
12.5
12.1
13.8
13.4
15.0
14.5
16.2
15.6
17.3
16.7
19.0
18.2
22.0
21.2
23.5
22.5
26.5
25.2
29.1
27.7
31.9
30.6
34.7
33.2
39.1
37.5
43.5
41.4
47.7
45.7
52.0
49.9
56.4
53.9
61.9
59.3
67.8
64.8
73.5
70.1
80.5
77.0
89.0
85.0
98.0
92.0
109
104
MAXIMUM
TEMP.
COEFFICIENT
OF V
BR
(%/°C)
0.057
0.057
0.061
0.061
0.065
0.065
0.068
0.068
0.073
0.073
0.075
0.075
0.076
0.078
0.081
0.081
0.084
0.084
0.086
0.086
0.088
0.089
0.090
0.090
0.092
0.092
0.094
0.094
0.096
0.096
0.097
0.097
0.098
0.098
0.099
0.099
0.100
0.100
0.101
0.101
0.101
0.101
0.102
0.102
0.103
0.103
0.104
0.104
0.104
0.104
0.105
0.105
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107
1.5KE6.8
1.5KE6.8A
(+)
1.5KE7.5
(+)
1.5KE7.5A
(+)
1.5KE8.2
(+)
1.5KE8.2A
(+)
1.5KE9.1
(+)
1.5KE9.1A
(+)
1.5KE10
(+)
1.5KE10A
(+)
1.5KE11
(+)
1.5KE11A
(+)
1.5KE12
(+)
1.5KE12A
(+)
1.5KE13
(+)
1.5KE13A
(+)
1.5KE15
(+)
1.5KE15A
(+)
1.5KE16
(+)
1.5KE16A
(+)
1.5KE18
(+)
1.5KE18A
(+)
1.5KE20
(+)
1.5KE20A
(+)
1.5KE22
(+)
1.5KE22A
(+)
1.5KE24
(+)
1.5KE24A
(+)
1.5KE27
(+)
1.5KE27A
(+)
1.5KE30
(+)
1.5KE30A
(+)
1.5KE33
(+)
1.5KE33A
(+)
1.5KE36
(+)
1.5KE36A
(+)
1.5KE39
(+)
1.5KE39A
(+)
1.5KE43
(+)
1.5KE43A
(+)
1.5KE47
(+)
1.5KE47A
(+)
1.5KE51
(+)
1.5KE51A
(+)
1.5KE56
(+)
1.5KE56A
(+)
1.5KE62
(+)
1.5KE62A
(+)
1.5KE68
(+)
1.5KE68A
(+)
1.5KE75
(+)
1.5KE75A
Document Number: 88301
Revision: 20-Sep-07
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
JEDEC
TYPE
NUMBER
1N6293
1N6293A
1N6294
1N6294A
1N6295
1N6295A
1N6296
1N6296A
1N6297
1N6297A
1N6298
1N6298A
1N6299
1N6299A
1N6300
1N6300A
1N6301
1N6301A
1N6302
1N6302A
1N6303
1N6303A
GENERAL
SEMICONDUCTOR
PART NUMBER
(+)
BREAKDOWN
VOLTAGE
V
BR
AT I
T (1)
(V)
MIN
MAX
90.2
86.1
100.0
95.5
110
105
121
116
132
126
143
137
165
158
176
168
187
179
198
189
220
210
242
231
275
263
330
315
385
368
440
420
484
462
528
504
561
535
594
567
73.8
77.9
81.9
86.5
90.0
95.0
99.0
105
108
114
117
124
136
143
144
152
153
162
162
171
180
190
198
209
225
237
270
285
315
333
360
380
396
418
432
456
459
485
486
513
TEST
CURRENT
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE
V
WM
(V)
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102
105
111
121
128
130
136
138
145
146
154
162
171
175
185
202
214
243
256
284
300
324
342
356
376
389
408
413
434
437
459
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D (4)
(µA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
PEAK
PULSE
CURRENT
I
PPM (2)
(A)
12.7
13.3
11.5
12.0
10.4
10.9
9.5
9.9
8.7
9.1
8.0
8.4
7.0
7.2
6.5
6.8
6.1
6.4
5.8
6.1
5.2
5.5
4.4
4.6
4.2
4.4
3.5
3.6
3.0
3.1
2.6
2.7
2.4
2.5
2.19
2.28
2.06
2.15
1.94
2.03
MAXIMUM
CLAMPING
VOLTAGE
AT I
PPM
V
C
(V)
118
113
131
125
144
137
158
152
173
165
187
179
215
207
230
219
244
234
258
246
287
274
344
328
360
344
430
414
504
482
574
548
631
602
686
658
729
698
772
740
MAXIMUM
TEMP.
COEFFICIENT
OF V
BR
(%/°C)
0.105
0.105
0.106
0.106
0.106
0.106
0.107
0.107
0.107
0.107
0.107
0.107
0.108
0.106
0.106
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.108
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
1.5KE82
(+)
1.5KE82A
(+)
1.5KE91
(+)
1.5KE91A
1.5KE100
1.5KE100A
(+)
1.5KE110
(+)
1.5KE 110A
(+)
1.5KE120
(+)
1.5KE120A
(+)
1.5KE130
(+)
1.5KE130A
(+)
1.5KE150
(+)
1.5KE150A
(+)
1.5KE160
(+)
1.5KE160A
(+)
1.5KE170
(+)
1.5KE170A
1.5KE180
1.5KE180A
1.5KE200
1.5KE200A*
1.5KE220
1.5KE220A*
1.5KE250
1.5KE250A
1.5KE300
1.5KE300A
1.5KE350
1.5KE350A
1.5KE400
1.5KE400A
1.5KE440
1.5KE440A
1.5KE480
1.5KE480A
1.5KE510
1.5KE510A
1.5KE540
1.5KE540A
(+)
(+)
Notes:
(1) Pulse test: t
p
≤
50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE CA62.35
(4) For bi-directional types with V
R
10 V and less the I
D
limit is doubled
*
(+)
Bi-directional versions are UL approved under component across the line protection, ULV1414 file number E108274 (1.5KE200CA,
1.5KE220CA)
Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
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108
Document Number: 88301
Revision: 20-Sep-07
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient
Typical thermal resistance, junction to lead
SYMBOL
R
θJA
R
θJL
VALUE
75
15.4
UNIT
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
1.5KE6.8A-E3/54
1.5KE6.8AHE3/54
(1)
Note:
(1) Automotive grade AEC Q101 qualified
UNIT WEIGHT (g)
0.968
0.968
PREFERRED PACKAGE CODE
54
54
BASE QUANTITY
1400
1400
DELIVERY MODE
13" diameter paper tape and reel
13" diameter paper tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
°C
unless otherwise noted)
100
150
I
PPM
- Peak Pulse Current,
%
I
RSM
P
PPM
- Peak Pulse Power (kW)
t
r
= 10
µs
Peak
Value
I
PPM
T
J
= 25 °C
Pulse
Width
(t
d
)
is defined as the Point
where
the Peak Current
decays to 50
%
of I
PPM
10
100
Half
Value
- I
PP
I
PPM
2
50
10/1000
µs Waveform
as defined
by
R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
1
0.1
0.1
µs
1.0
µs
10
µs
100
µs
1.0 ms
10 ms
t
d
- Pulse
Width
(s)
t - Time (ms)
Figure 1. Peak Pulse Power Rating Curve
Figure 3. Pulse Waveform
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage,
%
100
10000
Uni-Directional
Bi-Directional
75
C
J
- Capacitance (pF)
V
R
= 0
1000
50
100
V
R
= Rated
Stand-Off
Voltage
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
25
0
0
25
50
75
100
125
150
175
200
10
5
10
100
500
T
J
- Initial Temperature (°C)
V
BR
- Breakdown
Voltage
(V)
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Figure 4. Typical Junction Capacitance
Document Number: 88301
Revision: 20-Sep-07
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109
1.5KE6.8 thru 1.5KE540A, 1N6267 thru 1N6303
Vishay General Semiconductor
8.0
100
ΔV
C
- Incremental Clamping
Voltage
7.0
P
D
- Power Dissipation (W)
Waveform:
10/1000
µs
Impulse
ΔV
C
=
V
C
-
V
BR
1.5KE200
1.5KE130
1.5KE75
6.0
5.0
4.0
3.0
2.0
1.0
0
0
25
50
75
100
125
150
175
200
L = 0.375" (9.5 mm)
Lead Lengths
20
10
1.5KE39
2.0
1.0
1.5KE33
1.5KE6.8
1.5KE9.1
0.2
0.1
0.5
1
2
10
50
T
L
- Lead Temperature (°C)
I
PP
- Peak Pulse Current (A)
Figure 5. Power Derating Curve
Figure 8. Incremental Clamping Voltage Curve (Uni-Directional)
200
ΔV
C
- Incremental Clamping
Voltage
Peak Forward Surge Current (A)
T
J
= T
J
max.
8.3
ms Single Half Sine-Wave
100
100
Waveform
:
10/1000
µs
Impulse
ΔV
C
=
V
C
-
V
BR
20
10
1.5KE75C
2.0
1.0
1.5KE39C
1.5KE30C
1.5KE15C
11C
1.5KE7.5C
1.5KE200C
0.2
0.1
0.5
1
2
10
20
50
10
1
10
100
Number
of Cycles at 60 Hz
I
PP
- Peak Pulse Current (A)
Figure 6. Maximum Non-Repetitive Forward Surge Current
Uni-Directional only
100
Figure 9. Incremental Clamping Voltage Curve (Bi-directional)
100
1.5KE200
1.5KE130
1.5KE100
1.5KE75
ΔV
C
- Incremental Clamping
Voltage
ΔV
C
- Incremental Clamping
Voltage
Waveform:
8/20 µs
Impulse
ΔV
C
=
V
C
-
V
BR
20
10
20
10
Waveform:
8/20 µs
Impulse
ΔV
C
=
V
C
-
V
BR
1.5KE200C
1.5KE75C
1.5KE39C
1.5KE30C
1.5KE15C
1.5KE11C
1.5KE7.5C
2.0
1.0
1.5KE39
1.5KE33
1.5KE6.8
1.5KE9.1
1.5KE18
1.5KE12
2
1
0.2
0.1
0.5
1
2
10
20
50
0.2
0.1
0.5
1
2.0
10
20
50
I
PP
- Peak Pulse Current (A)
I
PP
- Peak Pulse Current (A)
Figure 7. Incremental Clamping Voltage Curve (Uni-Directional)
Figure 10. Incremental Clamping Voltage Curve (Bi-Directional)
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Document Number: 88301
Revision: 20-Sep-07
NXP MCU
