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1N6479

1 A, 100 V, SILICON, SIGNAL DIODE, DO-213AB

器件类别:半导体    分立半导体   

厂商名称:GE Sensing ( Amphenol Advanced Sensors )

厂商官网:http://www.vishay.com/

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1N6478 THRU 1N6484
SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER
Reverse Voltage
-
50 to 1000 Volts
Forward Current
-
1.0 Ampere
D
*
DO-213AB
N
SOLDERABLE ENDS
1st BAND
2nd BAND
D2
D1=
0.105
0.095
(2.67)
(2.41)
0.022 (0.56)
0.018 (0.46)
0.205 (5.2)
0.185(4.7)
1st band denotes type and positive end (cathode)
2nd band denotes voltage type
0
D2 = D1 + 0.008 (0.20)
-
Plastic package has
Underwriters Laboratory
Flammability Classification 94V-0
For surface mount applications
High temperature metallurgically
bonded construction
Glass passivated cavity-free junction
Capable of meeting environmental standards of
MIL-S-19500
High temperature soldering guaranteed:
450°C/5 seconds at terminals.
Complete device submersible temperature of
265°C for 10 seconds in solder bath
FEATURES
P
A
T
E
T
E
MECHANICAL DATA
Case:
JEDEC DO-213AB molded plastic over glass body
Terminals:
Plated terminals, solderable per MIL-STD-750,
Method 2026
Polarity:
Two bands indicate cathode end - 1st band
denotes device type and 2nd band denotes repetitive peak
reverse voltage rating
Mounting Position:
Any
Weight:
0.0046 ounce, 0.116 gram
Dimensions in inches and (millimeters)
*
Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602 and brazed-lead assembly by Patent No. 3,930,306
®
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Standard recovery time device: 1st band is White
Polarity color bands
(2nd Band)
* Maximum repetitive peak reverse voltage
Maximum RMS voltage
* Maximum DC blocking voltage
* Maximum average forward rectified current at
* Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load at T
A
=75°C (JEDEC Method)
* Maximum instantaneous forward voltage at 1.0A
T
A
=25°C
T
A
=75°C
* Maximum DC reverse current
at rated DC blocking voltage
T
A
=25°C
T
A
=125°C
SYMBOLS
1N
6478
1N
6479
1N
6480
1N
6481
1N
6482
1N
6483
1N
6484
UNITS
Gray
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
50
35
50
Red
100
70
100
Orange Yellow Green
200
140
200
400
280
400
1.0
30.0
600
420
600
Blue
800
560
800
Violet
1000
700
1000
Volts
Volts
Volts
Amp
Amps
V
F
1.1
1.0
10.0
200.0
100.0
8.0
50.0
20.0
-65 to +175
Volts
µA
µA
pF
°C/W
°C
I
R
I
R(AV)
C
J
R
ΘJA
R
ΘJT
T
J
, T
STG
* Maximum full load reverse current, full cycle
average at T
A
=75°C
* Typical junction capacitance
(NOTE 1)
* Maximum thermal resistance
(NOTE 2)
(NOTE 3)
* Operating junction and storage temperature range
NOTES:
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(2) Thermal resistance from junction to terminal, 0.24 x 0.24” (6.0 x 6.0mm) copper pads to each terminal
(3) Thermal resistance from junction to ambient, 0.24 x 0.24” (6.0 x 6.0mm) copper pads to each terminal
* JEDEC Registered Values
4/98
RATINGS AND CHARACTERISTIC CURVES 1N6478 THRU 1N6484
FIG. 1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
1.0
PEAK FORWARD SURGE CURRENT,
AMPERES
60 H
Z
RESISTIVE OR
INDUCTIVE LOAD
30
25
20
15
10
5.0
0
T
A
=75°C
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
175
1
10
NUMBER OF CYCLES AT 60 H
Z
100
TERMINAL TEMPERATURE, °C
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
10
TJ=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE
10
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
INSTANTANEOUS FORWARD CURRENT,
AMPERES
T
J
=100°C
1
1
0.1
0.1
T
J
=25°C
0.01
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
T
J
=25°C
f=1.0 MH
Z
Vsig=50mVp-p
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
TRANSIENT THERMAL IMPEDANCE (°C/W)
30
JUNCTION CAPACITANCE, pF
100
MOUNTED ON 0.20 x 0.27” (5 x 7mm)
COPPER PAD AREAS
10
10
1
1
1
10
REVERSE VOLTAGE, VOLTS
100
0.1
0.01
0.1
1
t, PULSE DURATION, sec
10
100
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参数对比
与1N6479相近的元器件有:1N6478、1N6480、1N6481、1N6482、1N6483、1N6484。描述及对比如下:
型号 1N6479 1N6478 1N6480 1N6481 1N6482 1N6483 1N6484
描述 1 A, 100 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, 50 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, SILICON, SIGNAL DIODE, DO-213AB 1 A, SILICON, SIGNAL DIODE, DO-213AB 1 A, SILICON, SIGNAL DIODE, DO-213AB 1 A, 800 V, SILICON, SIGNAL DIODE, DO-213AB 1 A, SILICON, SIGNAL DIODE, DO-213AB
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