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1SMA5956HF4

Zener Diode,

器件类别:分立半导体    二极管   

厂商名称:Taiwan Semiconductor

厂商官网:http://www.taiwansemi.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
Taiwan Semiconductor
包装说明
R-PDSO-C2
Reach Compliance Code
compliant
ECCN代码
EAR99
配置
SINGLE
二极管元件材料
SILICON
二极管类型
ZENER DIODE
最大动态阻抗
1200 Ω
JEDEC-95代码
DO-214AC
JESD-30 代码
R-PDSO-C2
JESD-609代码
e3
膝阻抗最大值
8000 Ω
湿度敏感等级
1
元件数量
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
极性
UNIDIRECTIONAL
最大功率耗散
1.5 W
参考标准
AEC-Q101
标称参考电压
200 V
最大反向电流
0.5 µA
反向测试电压
152 V
表面贴装
YES
技术
ZENER
端子面层
Matte Tin (Sn)
端子形式
C BEND
端子位置
DUAL
最大电压容差
5%
工作测试电流
1.9 mA
文档预览
1SMA5926 thru 1SMA5956
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low profile package
- Ideal for automated placement
- Glass passivated junction
- Built-in strain relief
- Low inductance
- Typical IR less than 0.5μA above 11V
- ESD Rating of Class 3B (HBM) per JEDEC.
- Moisture sensitivity level: level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Surface Mount Silicon Zener Diodes
DO-214AC (SMA)
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Polarity:
Indicated by cathode band
Weight:
0.06 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
DC power dissipation at T
L
=75℃, measure at
zero lead length (Note 1) derate above 75℃
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Operating junction temperature range
Storage temperature range
SYMBOL
P
D
I
FSM
T
J
T
STG
Value
1.5
20
10
- 55 to +150
- 55 to +150
UNIT
Watts
mW/℃
A
O
O
C
C
Note 1: Mounted on Cu-Pad size 5mm x 5mm x 1.6mm on PCB
ORDERING INFORMATION
PART NO.
AEC-Q101
QUALIFIED
PACKING
CODE
R3
R2
1SMAxxxx
(Note 1)
Prefix "H"
M2
F3
F2
F4
Note 1: "xxxx" defines voltage from 11V (1SMA5926) to 200V (1SMA5956)
Suffix "G"
GREEN COMPOUND
CODE
SMA
SMA
SMA
Folded SMA
Folded SMA
Folded SMA
1,800 / 7" Plastic reel
7,500 / 13" Paper reel
7,500 / 13" Plastic reel
1,800 / 7" Plastic reel
7,500 / 13" Paper reel
7,500 / 13" Plastic reel
PACKAGE
PACKING
EXAMPLE
PREFERRED P/N
1SMA5926 R3
1SMA5926 R3G
1SMA5926HR3
PART NO.
1SMA5926
1SMA5926
1SMA5926
H
AEC-Q101
QUALIFIED
PACKING CODE
R3
R3
R3
G
Green compound
AEC-Q101 qualified
GREEN COMPOUND
CODE
DESCRIPTION
Document Number: DS_D1405059
Version: K14
1SMA5926 thru 1SMA5956
Taiwan Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
Nominal Zener Voltage
Device
(Note 1)
Device
Marking
Code
Min.
1SMA5926
1SMA5927
1SMA5928
1SMA5929
1SMA5930
1SMA5931
1SMA5932
1SMA5933
1SMA5934
1SMA5935
1SMA5936
1SMA5937
1SMA5938
1SMA5939
1SMA5940
1SMA5941
1SMA5942
1SMA5943
1SMA5944
1SMA5945
1SMA5946
1SMA5947
1SMA5948
1SMA5949
1SMA5950
1SMA5951
1SMA5952
1SMA5953
1SMA5954
1SMA5955
1SMA5956
Notes:
1. Tolerance and Voltage Regulation Designation. The type number listed indicates a tolerance of ±5%
2. Vz limits are to be huatanteed at thermal equilibrium
926A
927A
928A
929A
930A
931A
932A
933A
934A
935A
936A
937A
938A
939A
940A
941A
942A
943A
944A
945A
946A
947A
948A
949A
950A
951A
952A
953A
954A
955A
956A
10.45
11.40
12.35
14.25
15.20
17.10
19.00
20.90
22.80
25.65
28.50
31.35
34.20
37.05
40.85
44.65
48.45
53.20
58.90
64.60
71.25
77.90
86.45
95.00
104.50
114.00
123.50
142.50
152.00
171.00
190.00
Vz@Iz
V
Nom.
(Notes 2)
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
180
200
Max.
11.55
12.60
13.65
15.75
16.80
18.90
21.00
23.10
25.20
28.35
31.50
34.65
37.80
40.95
45.15
49.35
53.55
58.80
65.10
71.40
78.75
86.10
95.55
105.00
115.50
126.00
136.50
157.50
168.00
189.00
210.00
34.1
31.2
28.8
25.0
23.4
20.8
18.7
17.0
15.6
13.9
12.5
11.4
10.4
9.6
8.7
8.0
7.3
6.7
6.0
5.5
5.0
4.6
4.1
3.7
3.4
3.1
2.9
2.5
2.3
2.1
1.9
5.5
6.5
7.0
9.0
10.0
12.0
14.0
17.5
19.0
23.0
26.0
33.0
38.0
45.0
53.0
67.0
70.0
86.0
100.0
120.0
140.0
160.0
200.0
250.0
300.0
360.0
450.0
600.0
700.0
900.0
1200.0
550
550
550
600
600
650
650
650
700
700
750
800
850
900
950
1000
1100
1300
1500
1700
2000
2500
3000
3100
4000
4500
5000
6000
6500
7000
8000
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
76.0
83.6
91.2
98.8
114.0
121.6
136.8
152.0
136
125
115
100
94
83
75
68
63
56
50
45
42
38
35
32
29
27
24
22
20
18
16
15
13
12
11
10
9
8
7
Test
Current
I
ZT
mA
Zener Impedance
Z
ZT
@I
ZT
Z
ZK
@I
ZK
mA
μA
Leakage Current
IR@VR
V
Maximum DC
Zener Current
I
ZM
mA(DC)
Document Number: DS_D1405059
Version: K14
1SMA5926 thru 1SMA5956
Taiwan Semiconductor
FIG. 1 STEADY STATE POWER DERATING
4
PD, MAXIMUM POWER DISSIPATION(WATTS)
3.6
3.2
FIG. 2 Vz = 12 THRU 68 VOLTS
100
I
Z
, ZENER CURRENT (mA)
100
125
150
2.8
2.4
2
1.6
1.2
0.8
0.4
0
0
25
50
75
T, TEMPERATURE(℃)
TA
TL
10
1
0.1
0
10
20
30
40
50
60
70
80
Vz, ZENER VOLTAGE (V)
FIG.3 ZENER VOLTAGE 12 TO 68 VOLTS
100
FIG. 4 EFFECT OF ZENER VOLTAGE
1000
Vz, TEMPERATURE COEFFICIENT
(mV/℃) @Izt
Zz, DYNAMIC IMPEDANCE (OHMS)
100
Iz(dc) = 1mA
10
10mA
Iz(ms) = Iz(dc)
20mA
10
10
100
1
10
Vz, ZENER VOLTAGE (V)
V
z
, ZENER VOLTAGE @IZT (V)
100
Document Number: DS_D1405059
Version: K14
1SMA5926 thru 1SMA5956
Taiwan Semiconductor
FIG.5 CAPACITANCE CURVE
1000
MEASURED@
ZERO BIAS
P
PK
, PEAK POWER (KW)
10
FIG. 6 TYPICAL PULSE RATING CURVE
C, CAPACITANCE(pF)
NONREPETITIVE, EXPONENTIAL
PULSE WAVEFORM, TA=25℃
1
100
MEASURED @
Vz/2
0.1
10
1
10
BREAKDOWN VOLTAGE (V)
100
0.01
0.01
0.1
1
10
Tp. PULSE WIDTH (ms)
FIG. 7 PULSE WAVEFORM
120
110
100
I
PPM
, PEAK PULSE CURRENT (%)
90
80
70
60
50
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
T, TIME(ms)
td
HALF VALUE - Ipp/2
10/1000
μs
WAVEFORM
AS DEFINED BY R.E.A.
≦10μs
PEAK
VALUE
120
PW(ID) IS DEFINED AS THE POINT
WHERE THE PEAK CURRENT
DECAYS TO 50% OF Ipp
I
PPM
, PEAK PULSE CURRENT (%)
110
100
90
80
70
60
50
40
30
20
10
0
0
T = 8μs
0.1 IPEAK
0.01
0.02
FIG. 8 PULSE WAVEFORM
8/20
μs
WAVEFORM
AS DEFINED BY ANSI C62.1
AND IEC 801.5
0.9 IPEAK
0.5 IPEAK
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
T, TIME(ms)
Document Number: DS_D1405059
Version: K14
1SMA5926 thru 1SMA5956
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
Unit (mm)
Min
1.27
4.06
2.29
1.99
0.90
4.95
0.10
0.15
Max
1.58
4.60
2.83
2.50
1.41
5.33
0.20
0.31
Unit (inch)
Min
0.050
0.160
0.090
0.078
0.035
0.195
0.004
0.006
Max
0.062
0.181
0.111
0.098
0.056
0.210
0.008
0.012
DIM.
A
B
C
D
E
F
G
H
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
Unit (mm)
1.68
1.52
3.93
2.41
5.45
Unit (inch)
0.066
0.060
0.155
0.095
0.215
MARKING DIAGRAM
P/N =
G=
YW =
F=
Device Marking Code
Green Compound
Date Code
Factory Code
Document Number: DS_D1405059
Version: K14
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