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25C040T/ST

512 X 8 SPI BUS SERIAL EEPROM, PDSO8, TSSOP-8

器件类别:存储    存储   

厂商名称:Microchip(微芯科技)

厂商官网:https://www.microchip.com

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
零件包装代码
SOIC
包装说明
TSSOP-8
针数
8
Reach Compliance Code
compli
ECCN代码
EAR99
其他特性
DATA RETENTION > 200 YEARS; 1M ENDURANCE CYCLES
最大时钟频率 (fCLK)
3 MHz
数据保留时间-最小值
200
耐久性
1000000 Write/Erase Cycles
JESD-30 代码
R-PDSO-G8
JESD-609代码
e3
长度
4.4 mm
内存密度
4096 bi
内存集成电路类型
EEPROM
内存宽度
8
湿度敏感等级
1
功能数量
1
端子数量
8
字数
512 words
字数代码
512
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
512X8
封装主体材料
PLASTIC/EPOXY
封装代码
TSSOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行
SERIAL
峰值回流温度(摄氏度)
260
认证状态
Not Qualified
座面最大高度
1.2 mm
串行总线类型
SPI
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子节距
0.65 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
40
宽度
3 mm
最长写入周期时间 (tWC)
5 ms
Base Number Matches
1
文档预览
25AA040/25LC040/25C040
4K SPI
Bus Serial EEPROM
Device Selection Table
Part
Number
25AA040
25LC040
25C040
V
CC
Range
1.8-5.5V
2.5-5.5V
4.5-5.5V
Max. Clock
Frequency
1 MHz
2 MHz
3 MHz
Temp.
Ranges
I
I
I,E
Communication to the device can be paused via the
hold pin (HOLD). While the device is paused, transi-
tions on its inputs will be ignored, with the exception of
Chip Select, allowing the host to service higher priority
interrupts. Also, write operations to the device can be
disabled via the write-protect pin (WP).
Package Types
PDIP
CS
SO
WP
V
SS
1
8
V
CC
HOLD
SCK
SI
25XX040
Features
• Low-power CMOS technology
- Write current: 3 mA typical
- Read current: 500
µA
typical
- Standby current: 500 nA typical
• 512 x 8-bit organization
• 16 byte page
• Write cycle time: 5 ms max.
• Self-timed ERASE and WRITE cycles
• Block write protection
- Protect none, 1/4, 1/2 or all of array
• Built-in write protection
- Power on/off data protection circuitry
- Write enable latch
- Write-protect pin
• Sequential read
• High reliability
- Endurance: 1M cycles
- Data retention: > 200 years
- ESD protection: > 4000V
• 8-pin PDIP, SOIC, and TSSOP packages
• Temperature ranges supported:
- Industrial (I):
-40°C to +85°C
- Automotive (E) (25C040):
-40°C to +125°C
2
3
4
7
6
5
SOIC
CS
SO
WP
V
SS
1
8
V
CC
HOLD
SCK
SI
25XX040
2
3
4
7
6
5
TSSOP
HOLD
V
CC
CS
SO
1
8
SCK
SI
V
SS
WP
25XX040
2
3
4
7
6
5
Block Diagram
Status
Register
HV Generator
I/O Control
Logic
Memory
Control
Logic
EEPROM
Array
XDEC
Page
Latches
Description
The Microchip Technology Inc. 25AA040/25LC040/
25C040 (25XX040
*
) is a 4 Kbit serial Electrically
Erasable PROM. The memory is accessed via a simple
Serial Peripheral Interface™ (SPI™) compatible serial
bus. The bus signals required are a clock input (SCK)
plus separate data in (SI) and data out (SO) lines.
Access to the device is controlled through a Chip
Select (CS) input.
*25XX040 is used in this document as a generic part number
for the 25AA040/25LC040/25C040 devices. SPI is a
trademark of Motorola Corporation.
SI
SO
CS
SCK
HOLD
WP
V
CC
V
SS
Y Decoder
Sense Amp.
R/W Control
2003 Microchip Technology Inc.
DS21204D-page 1
25AA040/25LC040/25C040
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
V
CC
.............................................................................................................................................................................7.0V
All inputs and outputs w.r.t. V
SS
.......................................................................................................... -0.6V to V
CC
+1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias ...............................................................................................................-65°C to 125°C
ESD protection on all pins ......................................................................................................................................... 4 KV
† NOTICE:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability
TABLE 1-1:
DC CHARACTERISTICS
Industrial (I):
T
A
= -40°C to +85°C V
CC
= 1.8V to 5.5V
Automotive (E): T
A
= -40°C to +125°C V
CC
= 4.5V to 5.5V (25C040 only)
Min.
2.0
0.7 V
CC
-0.3
-0.3
V
CC
-0.5
Max.
V
CC
+1
V
CC
+1
0.8
0.3 V
CC
0.4
0.2
±1
±1
7
Units
V
V
V
V
V
V
V
µA
µA
pF
Test Conditions
V
CC
2.7V
(Note)
V
CC
< 2.7V
(Note)
V
CC
2.7V
(Note)
V
CC
< 2.7V
(Note)
I
OL
= 2.1 mA
I
OL
= 1.0 mA, V
CC
< 2.5V
I
OH
=-400
µA
CS = V
CC
, V
IN
= V
SS TO
V
CC
CS = V
CC
, V
OUT
= V
SS TO
V
CC
T
A
= 25°C, CLK = 1.0 MHz,
V
CC
= 5.0V
(Note)
V
CC
= 5.5V; F
CLK
= 3.0 MHz; SO = Open
V
CC
= 2.5V; F
CLK
= 2.0 MHz; SO = Open
V
CC
= 5.5V
V
CC
= 2.5V
CS = V
CC
= 5.5V, Inputs tied to V
CC
or
V
SS
CS = V
CC
= 2.5V, Inputs tied to V
CC
or
V
SS
DC CHARACTERISTICS
Param.
No.
D001
D002
D003
D004
D005
D006
D007
D008
D009
D010
Sym.
V
IH1
V
IH2
V
IL1
V
IL2
V
OL
V
OL
V
OH
I
LI
I
LO
C
INT
Characteristic
High-level input
voltage
Low-level input
voltage
Low-level output
voltage
High-level output
voltage
Input leakage current
Output leakage
current
Internal Capacitance
(all inputs and
outputs)
D011
D012
D013
I
CC
Read Operating Current
I
CC
Write
I
CCS
Standby Current
1
500
5
3
5
1
mA
µA
mA
mA
µA
µA
Note:
This parameter is periodically sampled and not 100% tested.
DS21204D-page 2
2003 Microchip Technology Inc.
25AA040/25LC040/25C040
TABLE 1-2:
AC CHARACTERISTICS
Industrial (I):
Automotive (E):
T
A
= -40°C to +85°C
T
A
= -40°C to +125°C
V
CC
= 1.8V to 5.5V
V
CC
= 4.5V to 5.5V (25C040 only)
AC CHARACTERISTICS
Param
No.
1
Sym.
F
CLK
Characteristic
Clock Frequency
Min.
100
250
500
150
250
475
500
30
50
50
50
100
100
150
230
475
150
230
475
50
50
0
100
100
200
100
100
200
100
150
200
100
150
200
1M
Max.
3
2
1
2
2
150
230
475
200
250
500
5
Units
MHz
MHz
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
E/W
Cycles
Test Conditions
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
(Note 1)
(Note 1)
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
(Note 1)
V
CC
= 4.5V to 5.5V
(Note 1)
V
CC
= 2.5V to 4.5V
(Note 1)
V
CC
= 1.8V to 2.5V
(Note 1)
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
V
CC
= 4.5V to 5.5V
(Note 1)
V
CC
= 2.5V to 4.5V
(Note 1)
V
CC
= 1.8V to 2.5V
(Note 1)
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
(Note 2)
2
T
CSS
CS Setup Time
3
T
CSH
CS Hold Time
4
5
T
CSD
T
SU
CS Disable Time
Data Setup Time
6
T
HD
Data Hold Time
7
8
9
T
R
T
F
T
HI
CLK Rise Time
CLK Fall Time
Clock High Time
10
T
LO
Clock Low Time
11
12
13
T
CLD
T
CLE
T
V
Clock Delay Time
Clock Enable Time
Output Valid from Clock Low
14
15
T
HO
T
DIS
Output Hold Time
Output Disable Time
16
T
HS
HOLD Setup Time
17
T
HH
HOLD Hold Time
18
T
HZ
HOLD Low to Output High-Z
19
T
HV
HOLD High to Output Valid
20
21
T
WC
Note 1:
2:
Internal Write Cycle Time
Endurance
This parameter is periodically sampled and not 100% tested.
This parameter is not tested but ensured by characterization. For endurance estimates in a specific application, please
consult the Total Endurance™ Model which can be obtained from our web site: www.microchip.com.
2003 Microchip Technology Inc.
DS21204D-page 3
25AA040/25LC040/25C040
FIGURE 1-1:
CS
16
SCK
18
SO
n+2
n+1
n
high-impedance
19
n
5
n
n-1
n-1
17
16
17
HOLD TIMING
don’t care
SI
HOLD
n+2
n+1
n
FIGURE 1-2:
SERIAL INPUT TIMING
4
CS
2
Mode 1,1
SCK Mode 0,0
5
SI
6
LSB in
7
8
3
12
11
MSB in
SO
high-impedance
FIGURE 1-3:
SERIAL OUTPUT TIMING
CS
9
SCK
13
14
SO
MSB out
15
ISB out
10
3
Mode 1,1
Mode 0,0
SI
don’t care
DS21204D-page 4
2003 Microchip Technology Inc.
25AA040/25LC040/25C040
TABLE 1-3:
AC Waveform:
V
LO
= 0.2V
V
HI
= V
CC
- 0.2V
V
HI
= 4.0V
Input
Output
Note 1:
For V
CC
4.0V
2:
For V
CC
> 4.0V
(Note 1)
(Note 2)
SO
0.5 V
CC
0.5 V
CC
1.8 KΩ
100 pF
2.25 KΩ
AC TEST CONDITIONS
FIGURE 1-4:
AC TEST CIRCUIT AC
V
CC
Timing Measurement Reference Level
2003 Microchip Technology Inc.
DS21204D-page 5
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参数对比
与25C040T/ST相近的元器件有:25C040/ST。描述及对比如下:
型号 25C040T/ST 25C040/ST
描述 512 X 8 SPI BUS SERIAL EEPROM, PDSO8, TSSOP-8 512 X 8 SPI BUS SERIAL EEPROM, PDSO8, TSSOP-8
是否无铅 不含铅 不含铅
是否Rohs认证 符合 符合
零件包装代码 SOIC SOIC
包装说明 TSSOP-8 TSSOP-8
针数 8 8
Reach Compliance Code compli compli
ECCN代码 EAR99 EAR99
其他特性 DATA RETENTION > 200 YEARS; 1M ENDURANCE CYCLES DATA RETENTION > 200 YEARS; 1M ENDURANCE CYCLES
最大时钟频率 (fCLK) 3 MHz 3 MHz
数据保留时间-最小值 200 200
耐久性 1000000 Write/Erase Cycles 1000000 Write/Erase Cycles
JESD-30 代码 R-PDSO-G8 R-PDSO-G8
JESD-609代码 e3 e3
长度 4.4 mm 4.4 mm
内存密度 4096 bi 4096 bi
内存集成电路类型 EEPROM EEPROM
内存宽度 8 8
湿度敏感等级 1 1
功能数量 1 1
端子数量 8 8
字数 512 words 512 words
字数代码 512 512
工作模式 SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C
组织 512X8 512X8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSSOP TSSOP
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE, SHRINK PITCH SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行 SERIAL SERIAL
峰值回流温度(摄氏度) 260 260
认证状态 Not Qualified Not Qualified
座面最大高度 1.2 mm 1.2 mm
串行总线类型 SPI SPI
最大供电电压 (Vsup) 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V
表面贴装 YES YES
技术 CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL
端子面层 Matte Tin (Sn) Matte Tin (Sn)
端子形式 GULL WING GULL WING
端子节距 0.65 mm 0.65 mm
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 40 40
宽度 3 mm 3 mm
最长写入周期时间 (tWC) 5 ms 5 ms
Base Number Matches 1 1
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