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25RIA60M

40 A, 600 V, SCR, TO-208AA

器件类别:模拟混合信号IC    触发装置   

厂商名称:International Rectifier ( Infineon )

厂商官网:http://www.irf.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
International Rectifier ( Infineon )
零件包装代码
TO-48
包装说明
POST/STUD MOUNT, O-MUPM-D2
针数
2
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
HIGH RELIABILITY
配置
SINGLE
最大直流栅极触发电流
60 mA
最大直流栅极触发电压
2 V
最大维持电流
130 mA
JEDEC-95代码
TO-208AA
JESD-30 代码
O-MUPM-D2
JESD-609代码
e0
最大漏电流
10 mA
通态非重复峰值电流
440 A
元件数量
1
端子数量
2
最大通态电流
25000 A
最高工作温度
125 °C
最低工作温度
-65 °C
封装主体材料
METAL
封装形状
ROUND
封装形式
POST/STUD MOUNT
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
最大均方根通态电流
40 A
断态重复峰值电压
600 V
重复峰值反向电压
600 V
表面贴装
NO
端子面层
TIN LEAD
端子形式
SOLDER LUG
端子位置
UPPER
处于峰值回流温度下的最长时间
NOT SPECIFIED
触发设备类型
SCR
文档预览
Bulletin I2402 rev. A 07/00
25RIA SERIES
MEDIUM POWER THYRISTORS
Stud Version
Features
Improved glass passivation for high reliability
and exceptional stability at high temperature
High di/dt and dv/dt capabilities
Standard package
Low thermal resistance
Metric threads version available
Types up to 1600V V
DRM
/ V
RRM
25A
Typical Applications
Medium power switching
Phase control applications
Can be supplied to meet stringent military,
aerospace and other high-reliability requirements
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
I
2
t
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
T
J
typical
25RIA
10 to 120
140 to 160
25
85
40
420
440
867
790
100 to 1200
110
- 65 to 125
25
85
40
398
415
795
725
1400 to 1600
Units
A
°C
A
A
A
A
2
s
A
2
s
V
µs
°C
Case Style
TO-208AA (TO-48)
www.irf.com
1
25RIA Series
Bulletin I2402 rev. A 07/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
10
20
40
60
25RIA
80
100
120
140
160
V
DRM
/V
RRM
, max. repetitive
peak and off-state voltage (1)
V
100
200
400
600
800
1000
1200
1400
1600
V
RSM
, maximum non-
repetitive peak voltage (2)
V
150
300
500
700
900
1100
1300
1500
1700
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
20
10
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/µs
(2)
For voltage pulses with t
p
5ms
On-state Conduction
Parameter
I
T(AV)
I
T(RMS)
I
TSM
Max. average on-state current
@ Case temperature
Max. RMS on-state current
Max. peak, one-cycle
non-repetitive surge current
25RIA
10 to 120
25
85
40
420
440
350
370
140 to 160
25
85
40
398
415
335
350
795
725
560
510
7950
0.99
1.15
11.73
10.05
---
1.80
Units
A
°C
A
A
Conditions
180° sinusoidal conduction
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= T
J
max.
I
2
t
Maximum I
2
t for fusing
867
790
615
560
A
2
s
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
I
2
√t
Maximum I
2
√t
for fusing
voltage
8670
0.99
1.40
10.1
5.7
1.70
---
A
2
√s
V
t = 0.1 to 10ms, no voltage reapplied, T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
),T
J
= T
J
max.
V
T(TO)1
Low level value of threshold
V
T(TO)
2
High level value of threshold
voltage
r
t1
r
t2
V
TM
Low level value of on-state
slope resistance
High level value of on-state
slope resistance
Max. on-state voltage
mΩ
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
),T
J
= T
J
max.
V
I
pk
= 79 A, T
J
= 25°C
T
J
= 25°C. Anode supply 6V, resistive load,
I
H
I
L
Maximum holding current
Latching current
130
200
mA
2
www.irf.com
25RIA Series
Bulletin I2402 rev. A 07/00
Switching
Parameter
di/dt
Max. rate of rise of turned-on
current
V
DRM
600V
V
DRM
800V
V
DRM
1000V
V
DRM
1600V
t
gt
t
rr
t
q
Typical turn-on time
Typical reverse recovery time
200
180
160
150
0.9
4
µs
T
J
= 25°C,
at = rated V
DRM
/V
RRM
, T
J
= 125°C
T
J
= T
J
max.,
I
TM
= I
T(AV)
, t
p
> 200µs, di/dt = -10A/µs
Typical turn-off time
110
T
J
= T
J
max., I
TM
= I
T(AV)
, t
p
> 200µs, V
R
= 100V,
di/dt = -10A/µs, dv/dt = 20V/µs linear to
67% V
DRM
, gate bias 0V-100W
(*) t
q
= 10µsup to 600V, t
q
= 30µs up to 1600V available on special request.
A/µs
25RIA
Units
Conditions
T
J
= T
J
max., V
DM
= rated V
DRM
Gate pulse = 20V, 15Ω, t
p
= 6µs, t
r
= 0.1µs max.
I
TM
= (2x rated di/dt) A
Blocking
Parameter
dv/dt
Max. critical rate of rise of
off-state voltage
25RIA
100
300 (*)
Units
V/µs
Conditions
T
J
= T
J
max. linear to 100% rated V
DRM
T
J
= T
J
max. linear to 67% rated V
DRM
(**) Available with: dv/dt = 1000V/µs, to complete code add S90 i.e. 25RIA160S90.
Triggering
Parameter
P
GM
I
GM
-V
GM
I
GT
Maximum peak gate power
P
G(AV)
Maximum average gate power
Max. peak positive gate current
Maximum peak negative
gate voltage
DC gate current required
to trigger
90
60
35
V
GT
DC gate voltage required
to trigger
I
GD
V
GD
DC gate current not to trigger
DC gate voltage not to trigger
3.0
2.0
1.0
2.0
0.2
V
V
mA
V
mA
T
J
= - 65°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 65°C
T
J
= 25°C
T
J
= 125°C
T
J
= T
J
max., V
DRM
= rated value
T
J
= T
J
max.
V
DRM
= rated value
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Max. required gate trigger current/
voltage are the lowest value which
will trigger all units 6V anode-to-
cathode applied
25RIA
8.0
2.0
1.5
10
Units Conditions
W
A
V
T
J
= T
J
max.
T
J
= T
J
max.
T
J
= T
J
max.
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3
25RIA Series
Bulletin I2402 rev. A 07/00
Thermal and Mechanical Specification
Parameter
T
J
T
stg
Max. operating temperature range
Max. storage temperature range
25RIA
- 65 to 125
- 65 to 125
0.75
Units
°C
°C
K/W
Conditions
R
thJC
Max. thermal resistance,
junction to case
R
thCS
Max. thermal resistance,
case to heatsink
T
Mounting torque
to nut
DC operation
0.35
K/W
Mounting surface, smooth, flat and greased
to device
25
0.29
2.8
lbf-in
kgf.m
Nm
g (oz)
See Outline Table
Lubricated threads
(Non-lubricated threads)
20(27.5)
0.23(0.32)
2.3(3.1)
wt
Approximate weight
Case style
14 (0.49)
TO-208AA (TO-48)
∆R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Conduction angle
180°
120°
90°
60°
30°
Sinusoidal conduction Rectangular conduction Units
0.17
0.21
0.27
0.40
0.69
0.13
0.22
0.30
0.42
0.70
K/W
Conditions
T
J
= T
J
max.
Ordering Information Table
Device Code
25
1
RIA 160
2
3
M
4
S90
5
1
2
3
4
-
-
-
-
Current code
Essential part number
Voltage code: Code x 10 = V
RRM
(See Voltage Rating Table)
None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A
M
= Stud base TO-208AA (TO-48) M6 X 1
5
-
Critical dv/dt: None = 300V/µs (Standard value)
S90
= 1000V/µs (Special selection)
4
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25RIA Series
Bulletin I2402 rev. A 07/00
Outline Table
Case Style TO-208AA (TO-48)
All dimensions in millimeters (inches)
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
130
25RIA Series (100 to 1200V)
R
thJC
(DC) = 0.75 K/W
130
25RIA Series (100 to 1200V)
R
thJC
(DC) = 0.75 K/W
120
120
110
Conduction Angle
110
Conduction Period
100
30°
60°
100
30°
90°
60°
90°
120°
180°
DC
120°
180°
90
90
80
0
5
10
15
20
25
30
80
0
10
20
30
40
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristic
Fig. 2 - Current Ratings Characteristic
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