http://www.fujielectric.com/products/semiconductor/
2MBI200VH-120-50
IGBT MODULE (V series)
1200V / 200A / 2 in one package
High speed switching
Voltage drive
Low Inductance module structure
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Symbols
V
CES
V
GES
Ic
Collector current
IGBT Modules
Features
Applications
Maximum Ratings and Characteristics
Items
Collector-Emitter voltage
Gate-Emitter voltage
Inverter
Conditions
Tc=100°C
Tc=25°C
Continuous
1ms
1ms
1 device
Ic pulse
-Ic
-Ic pulse
Collector power dissipation
Pc
Tj
Junction temperature
Operating junction temperature (under switching conditions)
T
jop
Case temperature
T
C
Storage temperature
Tstg
Isolation voltage between terminal and copper base (*1)
V
iso
Mounting (*2)
Screw torque
-
Terminals (*3)
AC : 1min.
Maximum ratings
1200
±20
200
240
400
200
400
1110
175
150
125
-40 ~ +125
2500
6.0
5.0
Units
V
V
A
W
°C
VAC
Nm
Note *1: All terminals should be connected together during the test.
Note *2: Recommendable Value : 3.0-6.0 Nm (M5 or M6) (c)
Note *3: Recommendable Value : 2.5-5.0 Nm (M6)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Symbols
I
CES
I
GES
V
GE (th)
V
CE (sat)
(terminal)
V
CE (sat)
(chip)
Cies
ton
tr
tr (i)
toff
tf
V
F
(terminal)
V
F
(chip)
trr
Symbols
Rth(j-c)
Rth(c-f)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Conditions
V
GE
= 0V, V
CE
= 1200V
V
CE
= 0V, V
GE
= ±20V
V
CE
= 20V, I
C
= 200mA
V
GE
= 15V
I
C
= 200A
V
CE
= 10V, V
GE
= 0V, f = 1MHz
V
CC
= 600V
I
C
= 200A
V
GE
= ±15V
R
G
= 2.7Ω
Tj = 150°C
V
GE
= 0V
I
F
= 200A
I
F
= 200A
Conditions
IGBT
FWD
with Thermal Compound
Collector-Emitter saturation voltage
Inverter
Input capacitance
Turn-on time
Turn-off time
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Forward on voltage
Reverse recovery time
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Characteristics
min.
typ.
max.
-
-
2.0
-
-
400
6.0
6.5
7.0
-
1.95
2.40
-
2.25
-
-
2.30
-
-
1.75
2.15
-
2.05
-
-
2.10
-
-
18
-
-
0.60
-
-
0.20
-
-
0.05
-
-
0.80
-
-
0.08
-
-
1.85
2.35
-
2.00
-
-
1.95
-
-
1.70
2.15
-
1.85
-
-
1.80
-
-
0.15
-
Characteristics
min.
typ.
max.
-
-
0.135
-
-
0.200
-
0.0250
-
Units
mA
nA
V
V
nF
µs
V
µs
Units
°C/W
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance (1device) (*4)
Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound.
1
2MBI200VH-120-50
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
500
V
GE
=20V15V
400
Collector current: Ic [A]
300
200
100
8V
0
0
1
2
3
4
5
Collector-Emitter voltage: V
CE
[V]
0
10V
12V
Collector current: Ic [A]
400
300
200
100
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
500
V
GE
= 20V
15V
12V
10V
8V
0
1
2
3
4
5
Collector-Emitter voltage: V
CE
[V]
Collector current vs. Collector-Emitter voltage (typ.)
V
GE
= 15V / chip
500
Tj=25°C 125°C
400
Collector Current: Ic [A]
150°C
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25°C / chip
10
Collector-Emitter Voltage: V
CE
[V]
8
300
6
200
4
Ic=400A
Ic=200A
Ic=100A
5
10
15
20
25
100
2
0
0
1
2
3
4
Collector-Emitter Voltage: V
CE
[V]
5
0
Gate-Emitter Voltage: V
GE
[V]
Gate Capacitance vs. Collector-Emitter Voltage (typ.)
V
GE
= 0V, ƒ= 1MHz, Tj= 25°C
Gate Capacitance: Cies, Coes, Cres [nF]
Collector-Emitter voltage: V
CE
[200V/div]
Gate-Emitter voltage: V
GE
[5V/div]
100
Cies
10
Dynamic Gate Charge (typ.)
Vcc=600V, Ic=200A, Tj= 25°C
V
GE
V
CE
Cres
1
Coes
0.1
0
5
10
15
20
25
30
0
500
1000
1500
2000
2500
Collector-Emitter voltage: V
CE
[V]
Gate charge: Qg [nC]
2
2MBI200VH-120-50
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
Switching time vs. Collector current (typ.)
Vcc=600V, V
GE
=±15V, R
G
=2.7Ω, Tj=125°C
10000
Switching time: ton, tr, toff, tf [nsec]
Switching time: ton, tr, toff, tf [nsec]
Switching time vs. Collector current (typ.)
Vcc=600V, V
GE
=±15V, R
G
=2.7Ω, Tj=150°C
10000
1000
toff
ton
tr
1000
toff
ton
tr
100
tf
100
tf
10
0
100
200
300
400
500
10
0
100
200
300
400
500
Collector current: Ic [A]
Collector current: Ic [A]
Switching time vs. Gate resistance (typ.)
Vcc=600V, Ic=200A, V
GE
=±15V, Tj=125°C
Switching loss: Eon, Eoff, Err [mJ/pulse]
Switching time: ton, tr, toff, tf [nsec]
10000
Switching loss vs. Collector current (typ.)
Vcc=600V, V
GE
=±15V, R
G
=2.7Ω, Tj=125°C, 150°C
60
Tj=125
o
C
Tj=150
o
C
1000
toff
ton
tr
Eoff
Eon
40
100
tf
20
Err
10
1
10
Gate resistance: R
G
[Ω]
100
0
0
100
200
300
400
500
Collector current: Ic [A]
Switching loss vs. Gate resistance (typ.)
Vcc=600V, Ic=200A, V
GE
=±15V, Tj=125°C, 150°C
Switching loss: Eon, Eoff, Err [mJ/pulse]
100
Tj=125 C
Tj=150
o
C
Eon
50
Eoff
Collector current: Ic [A]
o
Reverse bias safe operating area (max.)
+V
GE
=15V, -V
GE
=15V, R
G
=2.7Ω, Tj=150°C
500
400
300
200
100
0
Err
0
1
10
Gate resistance: R
G
[Ω]
100
0
200
400
600
800 1000 1200 1400
Collector-Emitter voltage: V
CE
[V]
3
2MBI200VH-120-50
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
Forward Current vs. Forward Voltage (typ.)
chip
500
400
300
200
100
150°C
0
0
1
2
3
Forward on voltage: V
F
[V]
Reverse recovery current: Irr [A]
Reverse recovery time: trr [nsec]
Reverse Recovery Characteristics (typ.)
Vcc=600V, V
GE
=±15V, R
G
=2.7Ω, Tj=125°C
10000
Forward current: I
F
[A]
Tj=25°C
1000
Irr
100
trr
125°C
10
0
100
200
300
400
500
Forward current: I
F
[A]
Reverse Recovery Characteristics (typ.)
Vcc=600V, V
GE
=±15V, R
G
=2.7Ω, Tj=150°C
10000
Reverse recovery current: Irr [A]
Reverse recovery time: trr [nsec]
Thermal resistanse: Rth(j-c) [°C/W]
Transient Thermal Resistance (max.)
1
FWD
0.1
IGBT
1000
Irr
100
trr
0.01
10
0
100
200
300
400
500
Forward current: I
F
[A]
0.001
0.001
0.01
0.1
1
Pulse Width : Pw [sec]
4
2MBI200VH-120-50
Outline Drawings, mm
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
Equivalent Circuit Schematic
C1
G1
E1
C2E1
G2
E2
E2
5
