2MBI400N-060-01
600V / 400A 2 in one-package
Features
· VCE(sat) classified for easy parallel connection
· High speed switching
· Voltage drive
· Low inductance module structure
IGBT Module
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Equivalent Circuit Schematic
C2E1
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector
current
Continuous
1ms
1ms
Max. power dissipation
Operating temperature
Storage temperature
Isolation voltage
Screw torque
Symbol
V
CES
V
GES
I
C
I
C
pulse
-I
C
-I
C
pulse
P
C
T
j
T
stg
V
is
Mounting *
1
Terminals *
2
Rating
600
±20
400
800
400
800
1500
+150
-40 to +125
AC 2500 (1min.)
3.5
4.5
Unit
V
V
A
A
A
A
W
°C
°C
V
C1
E2
¤
¤
G1
E1
G2
¤ Current control circuit
E2
N·m
N·m
*
1
Recommendable value : 2.5 to 3.5 N·m (M5) or (M6)
*
2
Recommendable value : 3.5 to 4.5 N·m
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward on voltage
Reverse recovery time
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
t
on
t
r
t
off
t
f
V
F
t
rr
Characteristics
Min.
–
Typ.
–
–
–
–
型
廃
co
is
D
–
4.5
1.8
–
–
–
–
–
–
–
–
–
–
–
26400
5870
2670
0.6
0.2
0.6
0.2
種
機
Rank
F
A
B
C
D
V
CE(sat)
classification
Lenge
1.85 to 2.10V
Conditions
Ic = 400A
V
GE
= 15V
Tj = 25°C
tin
n
ed
u
2.0
rod
p
2.00 to 2.25V
2.15 to 2.40V
2.30 to 2.60V
2.50 to 2.80V
ct.
u
Conditions
Unit
mA
µA
V
V
pF
Max.
V
GE
=0V, V
CE
=600V
V
CE
=0V, V
GE
=±20V
V
CE
=20V, I
C
=400mA
V
GE
=15V, I
C
=400A
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=300V
I
C
=400A
V
GE
=±15V
R
G
=4.7ohm
I
F
=400A, V
GE
=0V
I
F
=400A
30
7.5
2.8
–
–
–
1.2
0.6
1.0
0.35
3.0
0.3
µs
V
µs
Thermal resistance characteristics
Item
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)*
Characteristics
Min.
Typ.
–
–
–
–
–
0.025
Conditions
Max.
0.085
0.15
–
IGBT
Diode
the base to cooling fin
°C/W
°C/W
°C/W
Unit
Thermal resistance
* : This is the value which is defined mounting on the additional cooling fin with thermal compound
2MBI400N-060-01
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage
Tj=25°C
IGBT Module
Collector current vs. Collector-Emitter voltage
Tj=125°C
800
800
Collector current : Ic [A]
400
Collector current : Ic [A]
600
600
400
200
200
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
0
0
1
2
3
4
5
Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage
Tj=25°C
Collector-Emitter vs. Gate-Emitter voltage
Tj=125°C
10
VCE [V]
VCE [V]
Collector-Emitter voltage :
10
8
Collector-Emitter voltage :
6
4
2
0
0
5
10
型
廃
15
種
機
8
6
4
Gate-Emitter voltage : VGE [V]
Di
co
s
20
tin
n
25
ed
u
2
0
0
rod
p
5
ct.
u
10
15
20
25
Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current
Vcc=300V, RG=4.7 ohm, VGE=±15V, Tj=25°C
Switching time vs. Collector current
Vcc=300V, RG=4.7 ohm, VGE=±15V, Tj=125°C
1000
Switching time : ton, tr, toff, tf [n sec.]
Switching time : ton, tr, toff, tf [n sec.]
1000
100
100
10
0
200
400
600
Collector current : Ic [A]
10
0
200
400
600
Collector current : Ic [A]
2MBI400N-060-01
IGBT Module
Switching time vs. RG
Vcc=300V, Ic=400A, VGE=±15V, Tj=25°C
500
Dynamic input characteristics
Tj=25°C
25
Switching time : ton, tr, toff, tf [n sec.]
1000
Collector-Emitter voltage : VCE [V]
400
20
300
15
100
200
10
100
5
10
1
5
Gate resistance : RG [ohm]
10
0
0
500
1000
1500
2000
Gate charge : Qg [nC]
0
2500
Forward current vs. Forward voltage
VGE=0V
1000
Reverse recovery characteristics
trr, Irr, vs. IF
Reverse recovery current : Irr [A]
Reverse recovery time : trr [n sec.]
800
Forward current : IF [A]
600
400
200
0
0
1
2
型
廃
co
is
D
3
4
Collector current : Ic [A]
種
機
100
tin
n
ed
u
0
rod
p
200
ct.
u
400
600
Forward voltage : VF [V]
Forward current : IF [A]
Transient thermal resistance
4000
3500
Thermal resistance : Rth (j-c) [°C/W]
Reversed biased safe operating area
>
+VGE=15V, -VGE < 15V, Tj < 125°C, RG = 4.7 ohm
=
=
3000
0.1
2500
2000
1500
1000
0.01
500
0
0.001
0.01
0.1
1
0
100
200
300
400
500
600
Pulse width : PW [sec.]
Collector-Emitter voltage : VCE [V]
Gate-Emitter voltage : VGE [V]
2MBI400N-060-01
IGBT Module
Switching loss vs. Collector current
Vcc=300V, RG=4.7 ohm, VGE=±15V
40
100
Capacitance vs. Collector-Emitter voltage
Tj=25°C
Switching loss : Eon, Eoff, Err [mJ/cycle]
30
Capacitance : Cies, Coes, Cres [nF]
10
20
10
1
0
0
200
400
600
0
5
10
15
20
25
30
35
Collector current : Ic [A]
Collector-Emitter voltage : VCE [V]
Outline Drawings, mm
型
廃
co
is
D
種
機
ed
u
rod
p
ct.
u
tin
n
