http://www.fujielectric.com/products/semiconductor/
2MBI650VXA-170E-54
IGBT MODULE (V series)
1700V / 650A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
IGBT Modules
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Items
Collector-Emitter voltage
Gate-Emitter voltage
Inverter
Collector current
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Symbols
V
CES
V
GES
I
c
Maximum Ratings and Characteristics
Conditions
Tc=25°C
Tc=100°C
Continuous
1ms
1ms
1 device
I
c pulse
-I
c
-I
c pulse
Collector power dissipation
Pc
Junction temperature
T
j
Operating junction temperature (under switching conditions)
T
jop
Case temperature
T
C
Storage temperature
T
stg
between terminal and copper base (*1)
V
iso
Isolation voltage
between thermistor and others (*2)
Mounting
Screw torque (*3) Main Terminals
-
Sense Terminals
Maximum ratings
1700
±20
900
650
1300
650
1300
4150
175
150
150
-40 ~ +150
4000
6.0
10.0
2.1
Units
V
V
A
W
°C
VAC
Nm
AC : 1min.
M5
M8
M4
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable Value : Mounting
3.0 ~ 6.0 Nm (M5) Recommendable Value : Main Terminals 8.0 ~ 10.0 Nm (M8)
Recommendable Value : Sense Terminals 1.8 ~ 2.1 Nm (M4)
1
8080
FEBUARY 2013
2MBI650VXA-170E-54
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Symbols
I
CES
I
GES
V
GE (th)
V
CE (sat)
(terminal)
(*4)
V
CE (sat)
(chip)
Rg
(int)
Cies
ton
tr
tr (i)
toff
tf
V
F
(terminal)
(*4)
V
F
(chip)
trr
R
B
Conditions
V
GE
= 0V, V
CE
= 1700V
V
CE
= 0V, V
GE
= ±20V
V
CE
= 20V, I
C
= 650mA
V
GE
= 15V
I
C
= 650A
-
V
CE
= 10V, V
GE
= 0V, f = 1MHz
V
CC
= 900V
I
C
= 650A
V
GE
= ±15V
R
G
= +1.8/-2.7Ω
Ls = 70nH
V
GE
= 0V
I
F
= 650A
I
F
= 650A
T=25°C
T=100°C
T=25/50°C
Collector-Emitter saturation voltage
Inverter
Internal gate resistance
Input capacitance
Turn-on time
Turn-off time
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Forward on voltage
Reverse recovery time
Thermistor
Resistance
B value
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Characteristics
min.
typ.
max.
-
-
4.0
-
-
800
6.0
6.5
7.0
-
2.10
2.55
-
2.50
-
-
2.55
-
-
2.00
2.45
-
2.40
-
-
2.45
-
-
1.75
-
-
63
-
-
1250
-
-
500
-
-
150
-
-
1550
-
-
150
-
-
1.95
2.40
-
2.20
-
-
2.15
-
-
1.85
2.30
-
2.10
-
-
2.05
-
-
240
-
-
5000
-
465
495
520
3305
3375
3450
Units
mA
nA
V
V
Ω
nF
nsec
V
µs
Ω
K
Note *4: Please refer to page 6 , there is definition of on-state voltage at terminal.
Thermal resistance characteristics
Items
Thermal resistance (1device)
Contact thermal resistance (1device) (*5)
Symbols
Rth(j-c)
Rth(c-f)
Conditions
Inverter IGBT
Inverter FWD
with Thermal Compound
Characteristics
min.
typ.
max.
-
-
0.036
-
-
0.072
-
0.0125
-
Units
°C/W
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
2
2MBI650VXA-170E-54
Characteristics (Representative)
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
0
1
V
GE
=20V
15V
12V
Collector current: Ic [A]
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
Tj= 150°C / chip
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
0
1
15V
V
GE
= 20V
12V
Collector current: Ic [A]
10V
10V
8V
2
3
4
5
8V
2
3
4
5
Collector-Emitter voltage: V
CE
[V]
Collector-Emitter voltage: V
CE
[V]
[INVERTER]
Collector current vs. Collector-Emitter voltage (typ.)
V
GE
= 15V / chip
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
0
1
Tj=25°C
125°C
150°C
[INVERTER]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj= 25°C / chip
10
Collector-Emitter Voltage: V
CE
[V]
8
6
4
2
0
Ic=1300A
Ic=650A
Ic=325A
Collector Current: Ic [A]
2
3
4
5
5
10
15
20
25
Collector-Emitter Voltage: V
CE
[V]
Gate-Emitter Voltage: V
GE
[V]
[INVERTER]
Gate Capacitance vs. Collector-Emitter Voltage (typ.)
V
GE
= 0V, ƒ= 1MHz, Tj= 25°C
Gate Capacitance: Cies, Coes, Cres [nF]
1000
20.00
15.00
Gate-Emitter voltage:
V
GE
[V]
10.00
5.00
0.00
-5.00
[INVERTER]
Dynamic Gate Charge (typ.)
Vcc=900V, Ic=650A, Tj= 25°C
1000
Collector-Emitter voltage:
V
CE
[V]
V
CE
750
500
250
0
100
***
Cies
V
GE
10
-250
-500
-750
Cres
Coes
-10.00
-15.00
-20.00
-8000
-4000
0
4000
1
0
5
10
15
20
25
30
Collector-Emitter voltage: V
CE
[V]
-1000
8000
Gate charge: Qg [nC]
3
2MBI650VXA-170E-54
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
[INVERTER]
Switching time vs. Collector current (typ.)
Vcc=900V, V
GE
=±15V, R
G
=+1.8/-2.7Ω, Tj=25°C
10000
Switching time: ton, tr, toff, tf [nsec]
[INVERTER]
Switching time vs. Collector current (typ.)
Vcc=900V, V
GE
=±15V, R
G
=+1.8/-2.7Ω, Tj=125°C, 150°C
10000
Switching time: ton, tr, toff, tf [nsec]
toff
1000
Tj=125
o
C
Tj=150
o
C
1000
toff
ton
tr
ton
tr
tf
100
tf
100
10
0
300
600
900
1200
1500
10
0
500
1000
1500
Collector current: Ic [A]
Collector current: Ic [A]
[INVERTER]
Switching time vs. Gate resistance (typ.)
Vcc=900V, Ic=650A, V
GE
=±15V, Tj=125°C, 150°C
10000
Switching time: ton, tr, toff, tf [nsec]
toff
1000
ton
[INVERTER]
Switching loss vs. Collector current (typ.)
Vcc=900V, V
GE
=±15V, R
G
=+1.8/-2.7Ω, Tj=125°C, 150°C
Switching loss: Eon, Eoff, Err [mJ/pulse]
600
500
400
300
200
100
0
Tj=125
o
C
Tj=150
o
C
tr
Eoff
Eon
100
tf
Tj=125
o
C
Tj=150
o
C
Err
10
1
Gate resistance:
R
G
[
Ω]
10
0
500
1000
1500
Collector current: Ic [A]
[INVERTER]
Switching loss vs. Gate resistance (typ.)
Vcc=900V, Ic=650A, V
GE
=±15V, Tj=125°C, 150°C
Switching loss: Eon, Eoff, Err [mJ/pulse]
700
600
500
400
300
200
100
0
0
1
Gate resistance: R
G
[Ω]
10
Eon
Err
Eoff
Tj=125 C
Tj=150
o
C
Collector current: Ic [A]
o
[INVERTER]
Reverse bias safe operating area (max.)
+V
GE
=15V, -V
GE
=15V, R
G
=+1.8/-2.7Ω, Tj=150°C
1400
1200
1000
800
600
400
200
0
0
500
1000
1500
2000
Collector-Emitter voltage: V
CE
[V]
Notice)
Please refer to page 7.
There is definision of V
CE
.
4
2MBI650VXA-170E-54
http://www.fujielectric.com/products/semiconductor/
IGBT Modules
[INVERTER]
Forward Current vs. Forward Voltage (typ.)
chip
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
[INVERTER]
Reverse Recovery Characteristics (typ.)
Vcc=900V, V
GE
=±15V, R
G
=+1.8/-2.7Ω, Tj=25°C
10000
Reverse recovery current: Irr [A]
Reverse recovery time: trr [nsec]
Tj=25°C
Forward current: I
F
[A]
1000
Irr
125
°C
trr
100
150
°C
0
1
2
3
4
10
0
500
1000
1500
Forward on voltage: V
F
[V]
Forward current: I
F
[A]
[INVERTER]
Reverse Recovery Characteristics (typ.)
Vcc=900V, V
GE
=±15V, R
G
=+1.8/-2.7Ω, Tj=125°C, 150°C
10000
Reverse recovery current: Irr [A]
Reverse recovery time: trr [nsec]
Tj=150
o
C
Thermal resistanse: Rth(j-c) [°C/W]
Tj=125
o
C
Transient Thermal Resistance (max.)
1
FWD
0.1
1000
Irr
trr
IGBT
0.01
100
0.001
T
Rth(j-c) =
〔sec〕
IGBT
FWD
∑
r
×
(1-e
-t/τn
)
n
=
1
n
4
10
Rth
〔°C/W〕
0.0023
0.00386
0.00772
0.0301
0.00979
0.01958
0.0598
0.01383
0.02766
0.0708
0.00852
0.01704
0
500
1000
1500
0.0001
0.001
0.01
0.1
1
Forward current: I
F
[A]
Pulse Width : Pw [sec]
[THERMISTOR]
Temperature characteristic (typ.)
100
FWD safe operating area (max.)
Tj=150°C
1500
Resistance : R [kΩ]
10
Reverse recovery current: Irr [A]
1000
Pmax=812kW
1
500
Notice)
Please refer to page 7.
There is definision of V
CE
.
0
0
500
1000
1500
Collector-Emitter voltage: V
CE
[V]
2000
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
Temperature [°C]
5
