TECHNICAL DATA
NPN SILICON HIGH POWER TRANSISTOR
Qualified per MIL-PRF-19500/208
Devices
2N1487
2N1488
2N1489
2N1490
Qualified Level
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Symbol
V
CEO
V
CBO
V
CEX
V
EBO
I
B
I
C
P
T
T
J
,
T
stg
Symbol
0
2N1487
2N1498
40
60
60
10
3.0
6.0
75
2N1488
2N1490
55
100
100
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
0
@ T
C
= 25
0
C
(1)
Operating & Storage Junction Temperature Range
-65 to +200
Max.
2.33
C
TO-33*
(TO-204AA)
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly @ 0.429 W/ C for T
C
> 25 C
*See Appendix A for
Package Outline
0
R
θ
JC
0
Unit
C/W
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 100 mAdc
Collector-Emitter Breakdown Voltage
I
C
= 200
µAdc
Collector-Emitter Breakdown Voltage
I
C
= 0.5 mAdc, V
EB
= 1.5 Vdc
Collector-Base Cutoff Current
V
CB
= 30 Vdc
Emitter-Base Cutoff Current
V
EB
= 10 Vdc
2N1487, 2N1489
2N1488, 2N1490
2N1487, 2N1489
2N1488, 2N1490
2N1487, 2N1489
2N1488, 2N1490
V
(BR)
CEO
40
55
60
100
60
100
25
25
Vdc
V
(BR)
CBO
Vdc
V
(BR)
CEX
I
CBO
I
EBO
Vdc
µAdc
µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N1487, 2N1488, 2N1489, 2N1490 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
I
C
= 1.5 Adc, V
CE
= 4.0 Vdc
Collector-Emitter Saturation Voltage
I
C
= 1.5 Adc, I
B
= 300 mAdc
I
C
= 1.5 Adc, I
B
= 100 mAdc
Base-Emitter Voltage
I
C
= 1.5 Adc, V
CE
= 4.0 Vdc
2N1487, 2N1488
2N1489, 2N1490
2N1487, 2N1488
2N1489, 2N1490
2N1487, 2N1488
2N1489, 2N1490
h
FE
15
25
45
75
3.0
1.0
3.0
2.0
Vdc
V
CE(sat)
V
BE(on)
Vdc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current
Transfer Ratio Cutoff Frequency
I
C
= 100 mAdc, V
CB
= 12 Vdc
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
f
hfb
C
obo
500
700
kc
pF
SWITCHING CHARACTERISTICS
Turn-On / Turn-Off Time
V
CC
= 12 Vdc; I
B0
= I
B2
= 150 mAdc; I
B1
= 300 mAdc; R
C
= 7.8
Ω
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%.
t
on +
t
off
25
µs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
