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2N2151

Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111

器件类别:分立半导体    晶体管   

厂商名称:Swampscott Electronics Co Inc

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器件参数
参数名称
属性值
厂商名称
Swampscott Electronics Co Inc
包装说明
POST/STUD MOUNT, O-MUPM-X
Reach Compliance Code
unknow
ECCN代码
EAR99
最大集电极电流 (IC)
2 A
集电极-发射极最大电压
80 V
配置
Single
最小直流电流增益 (hFE)
40
JEDEC-95代码
TO-111
JESD-30 代码
O-MUPM-X
元件数量
1
最高工作温度
175 °C
封装主体材料
METAL
封装形状
ROUND
封装形式
POST/STUD MOUNT
极性/信道类型
NPN
最大功率耗散 (Abs)
30 W
认证状态
Not Qualified
表面贴装
NO
端子形式
UNSPECIFIED
端子位置
UPPER
晶体管元件材料
SILICON
标称过渡频率 (fT)
10 MHz
文档预览
POWER SILICON NPN
Item
Number
Part Number
Manufacturer
Ic
Max
(A)
V(BR)CEO
hFE
fT
Max
1Hz)
1'1}
Min
ICBO
Max
(A)
t,
Max
(8)
tt
Max
(8)
P
D
Max
(W)
Toper
Max
(OC)
Package
Style
I(C)
>=
1 A, (Cont'd)
Semelab
Natl Semi
See Index
NEC
Corp
JA
Nat! Semi
See Index
GE Solid St
Natl Semi
Natl Semi
Hitachi Ltd
:semelab
PPC Product
Solitron
Sid St Dvcs
See Index
Natl Semi
Hitachi Ltd
Hitachi Ltd
Semelab
NthAmerSemi
Semelab
Semelab
NEC
Corp
JA
See Index
See Index
See Index
See Index
Hybrid Semi
Semelab
See Index
~I:li ~rp
JA
Semelab
NthAmerSemi
See Index
Natl Semi
See Index
Solitron
Solitron
Siemens Akt
Siemens Akt
:semela~
5
-
10
BC441-5
B0377-10
2N5598
2S078
NSOU05
2N6716
92GU05
92PU05
B0377-16
2S0781
~gf~~162
15
SOT5512
SOT5512
SOT5912
B0377-25
2S01083
2S0975
B0321
B0321
20
~g~~~
25
2S01779
2N3138
2N3140
2N3142
2N3144
BOY11
BOY11
2S012A
30
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.,:,
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
60
60
60
60
60
63
70
80
80
80
80
80
100
100
130
160
200
50M
80M
50M
50M
50M
50M
2.0u
1.0m
1.0u
100n
100n
100n
100n
2.0u
1.0u
100n
100n
100n
100n
2.0u
1u
1u
60
60
60
60
60
60
~g
60
60
gg
250
150
250
600n
150n
150n
150n
150n
600n
1.0
15
20
1.0
10
2.0
1.2
1.2
15
1.0
7.0
7.0
35
15
20
1
5.0
5.0
7.5
10
1.0
20
20
25
25
150
150
4.0
1.0
10
10
10
10
10
5.0
5.0
8.0
8.0
7.u
7.0
35
35
85
85
25
25
B.7
6.7
175 J
140 J
175 J
175 J
175 J
140 J
140 J
140 J
140 J
140 J
TO-39
TO-126
TO-66
TO-5
TO-202M
TO-237var
TO-237
TO-237var
TO-126
TO-126
60
60
60
60
60
:
60
120
120
120
150
150
150
500
500
800
10
10
10
10
10
10
20
30
30
40
40
~g~
~:g
g~~
175 J
175 J
175 J
140 J
140 J
140 J
.::g:~~
TO-39
TO-39
TO-66
TO-126
TO-252var
TO-126
TO-39
TO-39
50M
50M
50M
170n
375
80M
BOM
3.2k
60
65
65
65
65
70
70
70
75
75
75
75
80
80
80
60
~
:g~
10M
10M
10M
10M
10k
10k
5.0M
50M
50M
50M
50M
50M
50M
50M
50M
50M
10M
10M
25k
4.0M
4.0M
~~~1~8U
35
BSS15
2N5320
NS06178
2N6179
S2N4150
S2N4150-1
BOB29-10
BOB29-6
SML5903
SML590B
2N3577
2N3577
KT943G
2S0226B
SOT4303
SOT4303
~:g
~~
8:
50
50
50
100n
100u
100u
100u
100u
300u
300u
100n
500n
500n
100u
500u
800n
1.2u
4000n
4000n
1.5u
3.0u
3.0u
1.2u
800n
600n
140 J
175 S
175 S
175S
175 S
140 J
140 J
140 J
+g:~g
SPAKvar
StR-10
StR-10
StR-1/4
StR-1/4
TO-3
TO-3
TO-53
SPAKvar
TO-39
TO-39
TO-5
TO-202M
TO-126var
TO-5
TO-5
TO-202
TO-202
TO-39
TO-39
TO-66
TO-66
TO-53
TO-53
TO-126
TO-66
TO-5
TO-5
~.~~
120
130
250
250
8~g~
80n
80n
80n
~j~
j
175J
175 J
140 J
140 J
125 J
125 J
40
~~t~~~~
45
50
Semelab
Semelab
Semelab
SemiconTech
Space Power
V/O
Electro
Elec Trans
Sid St Dvcs
CrimsonSemi
~flmsonseml
8U
60
12
12
20
20
20
20
60
10u
10u
BO
80
80
80
80
80
60
80
gg
80
80
BO
60
60
80
80
80
gg
80
80
80
60
BO
80
80
80
gg
80
80
80
BO
80
80
BO
BO
gg
80
80
BO
80
80
80
80
80
gg
80
80
BO
80
80
~g~
H~j
175 J
175 J
175S
175S
140 J
140 J
60
60
90
60
60
100u
100u
1.0m
30u
150u
150u
~g+:~g~
55
BLX10
BLX10
2N2150
2N3220
OTL4452
2N2866
OTL3407
OTL3427
60
65
70
MJ2250
MJ2250
2N4300
SOT5908
2N4998
2N5148
2N5600
2N5152
B0379
B0379-6
KT943V
B0237
B0239B
B0817
B0817
SOT4306
SOT4312
2N2151
2N3221
2N2867
OTL3403
OTL3423
BCX60
B0371C
~~~~~O
Sid St Dvcs
Solitron
NthAmerSemi
See Index
See Index
Diode Trans
See Index
Diode Trans
Diode Trans
:seelnaex
NthAmerSemi
SiliconTran
CrimsonSemi
See Index
See Index
See Index
See Index
See Index
See Index
NthAmerSemi
Natl Semi
VlO Electro
See Index
See Index
NthAmerSemi
PhilipsElec
Sid St Dves
':::iflmson~ml
~g
20
20
20
20
20
20
20
20
25
25
30
30
30
30
30
30
:g
40
40
40
40
40
40
40
40
:g
40
40
40
40
40
40
40
40
40
40
40
50
50
~g
120
120
::g~
60
60
60
60
60
60
200
200
200
120
90
90
90
90
375
100
120
160
10M
10M
10M
10M
20M
20M
40M
40M
10M
10M
10M
30M
50M
50M
50M
50M
60M
~~g~
5.0u
10u
g:~
+g:~
175 J
175 J
175 J
175C
175 C
TO-5
TO-5
TO-111
StR-10
TO-5
StR-10
TO-111
TO-5
13
13
30
2.0
7
40
52
9
~.U
~:g
~~
.w_uu
1.0m
1.0m
1.0m
10u
100n
1.0m
1.0m
1.0m
1.0m
2.0u
2.0u
2.0u
0.1m
100u
200u
100u
100u
150u
150u
5.0u
10u
~.t?u
3uun
250n
200n
20
20
20
15
35
30
1.0
20
1.0
15
15
25
25
2.0
2.0
2.0
B.7
8.7
30
2.0
40
52
9
1.0
1.2
~;~ ~
175 J
175 J
175 J
175 J
175 J
175 J
175 J
175 J
140 J
140 J
140 J
140 J
140 J
140 J
140 J
+g:~~UAtt
TO-66
TO-66
TO-5
TO-66
TO-59
TO-39
TO-66
TO-39
~g~~~
~:~~:~i
~:g
~~~
~~
~:g ~
+g:~~~
TO-126
TO-126
TO-126
TO-126
TO-220AB
TO-202
TO-202
TO-5
TO-5
TO-111
StR-10
StR-10
TO-111
TO-5
TO-39
TO-237var
TO-237var
TO-237var
TO-237var
TO-237var
TO-126
TO-202M
!(}-~3~Var
75
80
120
120
120
120
120
120
120
250
400
400
250
3.0M
3.0M
3.0M
3.0M
4.0M
4.0M
10M
10M
20M
40M
40M
50M
50M
50M
SCM
50M
50M
50M
300n
300n
1.1u
800n
~g+:~~~
85
90
~g~~~g
95
B0373C
2N6707
92PE37C
B0349
NSOU06
CrimsonSemi
Sid St Dves
See Index
See
Index
See Index
Diode Trans
Diode Trans
See Index
See Index
~jstra!
:spA
Solid Stlnc
Natl Semi
See Index
Nat! Semi
Natl Semi
Natl Semi
~:g
~~g
::g~
~~g~
g:~
+g:~
175 J
175 C
175 C
~:g
:g
:gg
100n
100n
100n
100n
500n
100n
~g~
~gg~
g
140 J
140
140
140
140
140
1.2
2.0
1.2
15
10
~:g ~
J
J
J
J
J
888
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参数对比
与2N2151相近的元器件有:2N4300、2N5320。描述及对比如下:
型号 2N2151 2N4300 2N5320
描述 Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111 Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN Small Signal Bipolar Transistor, 2A I(C), 75V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN
厂商名称 Swampscott Electronics Co Inc Swampscott Electronics Co Inc Swampscott Electronics Co Inc
包装说明 POST/STUD MOUNT, O-MUPM-X CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Reach Compliance Code unknow unknow unknow
ECCN代码 EAR99 EAR99 EAR99
最大集电极电流 (IC) 2 A 2 A 2 A
集电极-发射极最大电压 80 V 80 V 75 V
配置 Single Single Single
最小直流电流增益 (hFE) 40 30 30
JEDEC-95代码 TO-111 TO-5 TO-5
JESD-30 代码 O-MUPM-X O-MBCY-W3 O-MBCY-W3
元件数量 1 1 1
最高工作温度 175 °C 175 °C 175 °C
封装主体材料 METAL METAL METAL
封装形状 ROUND ROUND ROUND
封装形式 POST/STUD MOUNT CYLINDRICAL CYLINDRICAL
极性/信道类型 NPN NPN NPN
最大功率耗散 (Abs) 30 W 15 W 10 W
认证状态 Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO
端子形式 UNSPECIFIED WIRE WIRE
端子位置 UPPER BOTTOM BOTTOM
晶体管元件材料 SILICON SILICON SILICON
标称过渡频率 (fT) 10 MHz 30 MHz 50 MHz
是否Rohs认证 - 不符合 不符合
零件包装代码 - TO-5 TO-5
针数 - 3 3
JESD-609代码 - e0 e0
端子数量 - 3 3
峰值回流温度(摄氏度) - NOT SPECIFIED NOT SPECIFIED
端子面层 - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
处于峰值回流温度下的最长时间 - NOT SPECIFIED NOT SPECIFIED
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器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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