2N2218-2N2219
2N2221-2N2222
HIGH-SPEED SWITCHES
DESCRIPTION
The 2N2218, 2N2219, 2N2221 and 2N2222 are sili-
con planar epitaxial NPN transistors in Jedec
TO-39 (for 2N2218 and 2N2219) and in Jedec
TO-18 (for 2N2221 and 2N2222) metal cases. They
are designed for high-speed switching applications
at collector currents up to 500 mA, and feature use-
ful current gain over a wide range of collector cur-
rent, low leakage currents and low saturation volt-
ages.
2N2218/2N2219 approved to CECC 50002-
100, 2N2221/2N2222 approved to CECC
50002-101 available on request.
TO-39
TO-18
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
t o t
Parameter
Collector-base Voltage (I
E
= 0)
Collector-emitter Voltage (I
B
= 0)
Emitter-base Voltage (I
C
= 0)
Collector Current
Total Power Dissipation at T
amb
≤
25
°C
for
2N2 21 8
and
for
2N2 22 1
and
at T
c as e
≤
25
°C
for
2N2 21 8
and
for
2N2 22 1
and
Storage Temperature
Junction Temperature
2 N22 19
2 N22 22
2 N22 19
2 N22 22
Value
60
30
5
0.8
0.8
0.5
3
1.8
– 65 to 200
175
Unit
V
V
V
A
W
W
W
W
°C
°C
1/5
T
st g
T
j
January 1989
2N2218-2N2219-2N2221-2N2222
THERMAL DATA
2 N22 18
2 N22 19
R
t h j- cas e
R
t h j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
50
°C/W
187.5
°C/W
2N 222 1
2N 222 2
83.3
°C/W
300
°C/W
ELECTRICAL CHARACTERISTICS
(T
amb
= 25
°C
unless otherwise specified)
Symbol
I
CBO
I
E BO
V
( BR)
CBO
Parameter
Collector Cutoff Current
(I
E
= 0)
Emitter Cutoff Current
(I
C
= 0)
Colllector-base Breakdown
Voltage (I
E
= 0)
Collector-emitter Breakdown
Voltage (I
B
= 0)
Emittter-base Breakdown
Voltage (I
C
= 0)
Collector-emitter Saturation
Voltage
Base-emitter Saturation
Voltage
DC Current Gain
Test Conditions
V
CB
= 50 V
V
CB
= 50 V
V
E B
= 3 V
I
C
= 10
µA
I
C
= 10 mA
I
E
= 10
µA
I
C
= 150 mA
I
C
= 500 mA
I
C
= 150 mA
I
C
= 500 mA
I
B
= 15 mA
I
B
= 50 mA
I
B
= 15 mA
I
B
= 50 mA
T
am b
= 150
°C
Min.
Typ.
Max.
10
10
10
Unit
nA
µA
nA
V
V
V
60
30
5
0.4
1.6
1.3
2.6
20
25
35
40
20
20
35
50
75
100
30
50
250
8
60
V
(BR)CE O
*
V
( BR)
V
CE
V
B E
EBO
(s at )
*
V
V
V
V
(s at )
*
h
F E
*
for
2N 221 8
and
2N 22 21
I
C
= 0.1 mA
V
CE
= 10 V
I
C
= 1 mA
V
CE
= 10 V
I
C
= 10 mA
V
CE
= 10 V
I
C
= 150 mA
V
CE
= 10 V
I
C
= 500 mA
V
CE
= 10 V
I
C
= 150 mA
V
CE
= 1 V
for
2N 221 9
and
2N 22 22
I
C
= 0.1 mA
V
CE
= 10 V
I
C
= 1 mA
V
CE
= 10 V
I
C
= 10 mA
V
CE
= 10 V
I
C
= 150 mA
V
CE
= 10 V
I
C
= 500 mA
V
CE
= 10 V
I
C
= 150 mA
V
CE
= 1 V
I
C
= 20 mA
f = 100 MHz
I
E
= 0
f = 100 kHz
I
C
= 20 mA
f = 300 MHz
V
CE
= 20 V
V
CB
= 10 V
V
CE
= 20 V
120
300
f
T
C
CBO
R
e (h ie )
Transition Frequency
Collector-base Capacitance
Real Part of Input
Impedance
MHz
pF
Ω
* Pulsed : pulse duration = 300
µs,
duty cycle = 1 %.
2/5
2N2218-2N2219-2N2221-2N2222
TO-18 MECHANICAL DATA
mm
DIM.
MIN.
A
B
D
E
F
G
H
I
L
45
o
2.54
1.2
1.16
45
o
TYP.
12.7
0.49
5.3
4.9
5.8
0.100
0.047
0.045
MAX.
MIN.
TYP.
0.500
0.019
0.208
0.193
0.228
MAX.
inch
D
G
I
H
E
F
A
L
C
B
0016043
3/5
2N2218-2N2219-2N2221-2N2222
TO39 MECHANICAL DATA
mm
DIM.
MIN.
A
B
D
E
F
G
H
I
L
5.08
1.2
0.9
45
o
(typ.)
12.7
0.49
6.6
8.5
9.4
0.200
0.047
0.035
TYP.
MAX.
MIN.
0.500
0.019
0.260
0.334
0.370
TYP.
MAX.
inch
D
G
I
H
E
F
A
L
B
P008B
4/5
2N2218-2N2219-2N2221-2N2222
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
©
1994 SGS-THOMSON Microelectronics - All Rights Reserved
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