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2N2605/TR

双极晶体管 - 双极结型晶体管(BJT)

器件类别:半导体    分立半导体    晶体管    双极晶体管 - 双极结型晶体管(BJT)   

厂商名称:Microsemi

厂商官网:https://www.microsemi.com

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器件参数
参数名称
属性值
厂商名称
Microsemi
产品种类
双极晶体管 - 双极结型晶体管(BJT)
RoHS
N
技术
Si
安装风格
Through Hole
封装 / 箱体
TO-206AB-3
晶体管极性
PNP
配置
Single
集电极—发射极最大电压 VCEO
60 V
集电极—基极电压 VCBO
70 V
发射极 - 基极电压 VEBO
6 V
集电极—射极饱和电压
0.3 V
最大直流电集电极电流
30 mA
最小工作温度
- 65 C
最大工作温度
+ 200 C
直流电流增益 hFE 最大值
450 at 500 uA, 5 V
封装
Reel
直流集电极/Base Gain hfe Min
30 at 10 mA, 5 V
Pd-功率耗散
400 mW
工厂包装数量
100
文档预览
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PNP SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/354
DEVICES
LEVELS
2N2604
2N2605
2N2604UB
2N2605UB
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T
A
= +25°C
(1)
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Thermal Resistance, Junction-to-Ambient
UB
Note:
1/ Consult 19500/354 for thermal curves
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Base Cutoff Current
V
CB
= 80V dc
2N2604, UB
V
CB
= 70V dc
2N2605, UB
V
CB
= 50V dc
2N2604, 2N2605, UB
V
CB
= 50V dc, T
A
= +150°C
2N2604, 2N2605, UB
Collector-Emitter Breakdown Current
I
C
= 10mAdc
Emitter-Base Cutoff Current
V
EB
= 6.0Vdc
V
EB
= 5.0Vdc
Collector-Emitter Cutoff Current
V
CE
= 50Vdc
Symbol
Min.
Max.
Unit
Symbol
R
θJA
Max.
437
275
Unit
°C/mW
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
J
, T
stg
2N2604
80
60
6.0
30
400
-65 to +200
2N2605
70
Unit
Vdc
Vdc
Vdc
mAdc
mW/°C
°C
TO-46 (TO-206AB)
I
CBO
10.0
10.0
10.0
5.0
60
10.0
2.0
10
uAdc
nAdc
uAdc
uAdc
Vdc
uAdc
ηAdc
ηAdc
UB Package
V
(BR)CEO
I
EBO
I
CES
T4-LDS-0092 Rev. 2 (101320)
Page 1 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions
ON CHARACTERTICS
(2)
Forward-Current Transfer Ratio
I
C
= 10μAdc, V
CE
= 5.0Vdc
I
C
= 500μAdc, V
CE
= 5.0Vdc
I
C
= 10mAdc, V
CE
= 5.0Vdc
I
C
= 10mAdc, V
CE
= 5.0Vdc, T
A
= -55°C
Collector-Emitter Saturation Voltage
I
C
= 10mAdc, I
B
= 500μAdc
Base-Emitter Saturation Voltage
I
C
= 10mA, I
B
= 500μAdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Small-Signal Short-Circuit Input Impedance
I
C
= 1.0mAdc, V
CB
= 5.0Vdc, f = 1.0kHz
Symbol
2N2604, UB
2N2605, UB
h
ie
Min.
1.0
2.0
Max.
10
20
40
60
60
150
1.0
180
450
8.0
6.0
Unit
Symbol
Min.
Max.
Unit
2N2604, UB
2N2605, UB
2N2604, UB
2N2605, UB
2N2604, UB
2N2605, UB
2N2604, UB
2N2605, UB
V
CE(sat)
h
FE
40
100
60
150
40
100
15
30
120
300
180
450
160
400
0.3
Vdc
V
BE(sat)
0.7
0.9
Vdc
Small-Signal Open-Circuit Forward Current Output Admittance
I
C
= 1.0mAdc, V
CE
= 5.0Vdc, f = 1.0kHz
2N2604, UB
2N2605, UB
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0mAdc, V
CE
= 5.0Vdc, f = 1.0kHz
2N2604, UB
2N2605, UB
Magnitude of Small-Signal Forward Current Transfer Ratio
I
C
= 0.5mAdc, V
CE
= 5.0Vdc, f = 30MHz
Output Capacitance
V
CB
= 5.0Vdc, I
E
= 0, 100 kHz
f
1.0MHz
Noise Figure
V
CE
= 5.0Vdc, I
C
= 10μAdc, R
g
= 10kΩ, f = 100Hz
V
CE
= 5.0Vdc, I
C
= 10μAdc, R
g
= 10kΩ, f = 1.0kHz
V
CE
= 5.0Vdc, I
C
= 10μAdc, R
g
= 10kΩ, f = 10kHz
(2) Pulse Test: Pulse Width = 300μs, Duty Cycle
2.0%
h
oe
μmhos
h
fe
|h
fe
|
C
obo
pF
F
1
F
2
F
3
5.0
3.0
3.0
dB
T4-LDS-0092 Rev. 2 (101320)
Page 2 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.178
.195
4.52
4.95
.065
.085
1.65
2.16
.209
.230
5.31
5.84
.100 TP
2.54 TP
.016
.021
0.41
0.53
.500 1.750 12.70 44.45
.016
.019
0.41
0.48
.050
1.27
.250
6.35
.040
1.02
.028
.048
0.71
1.22
.036
.046
0.91
1.17
.010
0.25
45° TP
45° TP
Symbol
CD
CH
HD
LC
LD
LL
LU
L
1
L
2
Q
TL
TW
r
α
Note
5
6
6
6
6
6
4
3, 8
3, 8
9
5
NOTES:
Dimensions are in inches. Lead 1 is emitter, lead 2 is base, and lead 3 is collector.
Millimeters are given for general information only.
Symbol TL is measured from HD maximum.
Details of outline in this zone are optional.
Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18
mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be
measured by direct methods or by the gauge and gauging procedure.
6. Symbol LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum.
7. Lead number three is electrically connected to case.
8. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
9. Symbol r applied to both inside corners of tab.
10. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
1.
2.
3.
4.
5.
FIGURE 1.
Physical dimensions - (TO-46).
T4-LDS-0092 Rev. 2 (101320)
Page 3 of 4
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Symbol
BH
BL
BW
CL
CW
LL
1
LL
2
NOTES:
1.
2.
3.
4.
5.
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.046
.056 1.17
1.42
.115
.128 2.92
3.25
.085
.108 2.16
2.74
.128
3.25
.108
2.74
.022
.038 0.56
0.97
.017
.035 0.43
0.89
Dimensions
Notes
Symbol
LS
1
LS
2
LW
r
r
1
r
2
Inches
Min
Max
.035
.039
.071
.079
.016
.024
.008
.012
.022
Millimeters
Min
Max
0.89
0.99
1.80
2.01
0.41
0.61
0.20
0.31
0.56
Notes
Dimensions are in inches.
Millimeters are given for general information only.
Hatched areas on package denote metallized areas
Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
FIGURE 2.
Physical dimensions, surface mount (UB version).
T4-LDS-0092 Rev. 2 (101320)
Page 4 of 4
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Microsemi
:
Jantx2N2604 2N2605 2N2604 Jantxv2N2605 Jantx2N2605 Jantxv2N2604 2N2605UB 2N2605/TR 2N2604/TR
Jan2N2605/TR Jantx2N2605/TR Jantxv2N2605/TR
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参数对比
与2N2605/TR相近的元器件有:Jantx2N2605/TR、Jan2N2605/TR、2N2604/TR。描述及对比如下:
型号 2N2605/TR Jantx2N2605/TR Jan2N2605/TR 2N2604/TR
描述 双极晶体管 - 双极结型晶体管(BJT) 双极晶体管 - 双极结型晶体管(BJT) 双极晶体管 - 双极结型晶体管(BJT) 双极晶体管 - 双极结型晶体管(BJT)
厂商名称 Microsemi Microsemi Microsemi Microsemi
产品种类 双极晶体管 - 双极结型晶体管(BJT) 双极晶体管 - 双极结型晶体管(BJT) 双极晶体管 - 双极结型晶体管(BJT) 双极晶体管 - 双极结型晶体管(BJT)
RoHS N N N N
技术 Si Si Si Si
安装风格 Through Hole Through Hole Through Hole Through Hole
封装 / 箱体 TO-206AB-3 TO-206AB-3 TO-206AB-3 TO-46-3
晶体管极性 PNP PNP PNP PNP
配置 Single Single Single Single
集电极—发射极最大电压 VCEO 60 V 60 V 60 V 60 V
集电极—基极电压 VCBO 70 V 70 V 70 V 80 V
发射极 - 基极电压 VEBO 6 V 6 V 6 V 6 V
集电极—射极饱和电压 0.3 V 0.3 V 0.3 V 0.3 V
最大直流电集电极电流 30 mA 30 mA 30 mA 30 mA
最小工作温度 - 65 C - 65 C - 65 C - 65 C
最大工作温度 + 200 C + 200 C + 200 C + 200 C
直流电流增益 hFE 最大值 450 at 500 uA, 5 V 450 at 500 uA, 5 V 450 at 500 uA, 5 V 180 at 500 uA, 5 V
直流集电极/Base Gain hfe Min 30 at 10 mA, 5 V 30 at 10 mA, 5 V 30 at 10 mA, 5 V 15 at 100 mA, 5 V
Pd-功率耗散 400 mW 400 mW 400 mW 400 mW
工厂包装数量 100 1 1 100
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