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2N3251DCSMG4

200mA, 60V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6

器件类别:分立半导体    晶体管   

厂商名称:SEMELAB

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
零件包装代码
LCC
包装说明
SMALL OUTLINE, R-CDSO-N6
针数
6
Reach Compliance Code
compliant
ECCN代码
EAR99
最大集电极电流 (IC)
0.2 A
集电极-发射极最大电压
60 V
配置
SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE)
100
JEDEC-95代码
MO-041BB
JESD-30 代码
R-CDSO-N6
JESD-609代码
e4
元件数量
2
端子数量
6
封装主体材料
CERAMIC, METAL-SEALED COFIRED
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
极性/信道类型
PNP
认证状态
Not Qualified
表面贴装
YES
端子面层
GOLD
端子形式
NO LEAD
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
晶体管元件材料
SILICON
标称过渡频率 (fT)
300 MHz
Base Number Matches
1
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DUAL PNP SWITCHING
TRANSISTORS
2N3251DCSM
Dual Silicon Planer PNP Transistors
Hermetic Ceramic Surface Mount Package
Designed For Small Signal, General Purpose and
Switching Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(Each Side, TA = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
TA = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
Each Side Total Device
-50V
-40V
-5V
-200mA
360mW
500mW
(1)
2.06mW/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
(Each Side)
Symbols
R
θJA
R
θJSP(IS)
(2)
Parameters
Thermal Resistance, Junction To Ambient
Thermal Resistance, Junction To Solder Point
Max.
486
208.33
Units
°C/W
°C/W
Notes
(1) Total device power dissipation limited by package.
(2) Infinite sink mount to PCB
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 9338
Issue 2
Page 1 of 3
Website:
http://www.semelab-tt.com
DUAL PNP SWITCHING
TRANSISTORS
2N3251DCSM
ELECTRICAL CHARACTERISTICS
(Each Side , TA = 25°C unless otherwise stated)
Symbols
V(BR)CEO
ICBO
IEBO
ICEX
(3)
Parameters
Collector-Emitter
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Cut-Off Current
Test Conditions
IC = -10mA
VCB = -50V
VCB = -40V
VEB = -5V
VCE = -40V
VBE = -3V
TA = 150°C
IC = -0.1mA
IC = -1.0mA
VCE = -1.0V
VCE = -1.0V
TA = -55°C
IC = -10mA
IC = -50mA
VCE = -1.0V
VCE = -1.0V
IB = -1.0mA
IB = -5mA
IB = -1.0mA
IB = -5mA
IB = 0
Min.
-40
Typ.
Max.
Units
V
-10
-20
-10
-20
-20
80
90
40
100
30
-0.25
-0.5
-0.6
-0.9
-1.2
300
µA
nA
µA
nA
µA
hFE
(3)
Forward-current transfer
ratio
VCE(sat)
(3)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
IC = -10mA
IC = -50mA
IC = -10mA
IC = -50mA
V
VBE(sat)
(3)
DYNAMIC CHARACTERISTICS
(Each Side , TA = 25°C unless otherwise stated)
Symbols
fT
Parameters
Transition Frequency
Test Conditions
IC = -10mA
f = 100MHz
VCB = -10V
f = 1.0MHz
IE = 0
VCE = -20V
Min.
300
Typ.
Max.
Units
MHz
Cobo
Output Capacitance
6
pF
8
Cibo
(4)
Input Capacitance
VEB = -1.0V
f = 1.0MHz
IC = -1.0mA
f = 1.0KHz
IC = 0
hie
Input Impedance
VCE = -10V
2
12
K
hre
(4)
Reverse Voltage Ratio
IC = -1.0mA
f = 1.0KHz
IC = -1.0mA
f = 1.0KHz
VCE = -10V
20
x10
-4
hfe
Small Signal Current Gain
VCE = -10V
100
400
hoe
(4)
Output Admittance
IC = -1.0mA
f = 1.0KHz
VCE = -10V
10
60
µS
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 9338
Issue 2
Page 2 of 3
DUAL PNP SWITCHING
TRANSISTORS
2N3251DCSM
DYNAMIC CHARACTERISTICS
(Each Side , TA = 25°C unless otherwise stated)
Symbols
`rb’CC
(4)
Parameters
Collector Base
Time Constant
Noise Figure
Test Conditions
IC = -10mA
f = 31.8MHz
IC = -0.1mA
RS = 1.0K
VCC = -3V
IC = -10mA
VCC = -3V
VCE = -5V
f = 100Hz
VBE = 0.5V
IB1 = -1.0mA
IC = -10mA
VCE = -20V
Min.
Typ.
Max.
250
Units
ps
NF
(4)
6
dB
ton
Turn-On Time
70
ns
300
toff
Turn-Off Time
IB1 = -IB2 = -1.0mA
Notes
(3) Pulse Width
300us,
δ ≤
2%
(4) By design only, not a production test.
MECHANICAL DATA
Dimensions in mm (inches)
2.29 ± 0.20
(0.09 ± 0.008)
1.65 ± 0.13
(0.065 ± 0.005)
1.40 ± 0.15
(0.055 ± 0.006)
0.64 ± 0.06
(0.025 ± 0.003)
2.54 ± 0.13
(0.10 ± 0.005)
2
1
A
3
4
5
6
0.23 rad.
(0.009)
A = 1.27 ± 0.13
(0.05 ± 0.005)
6.22 ± 0.13
(0.245 ± 0.005)
LCC2 (MO-041BB)
Underside View
Pad 1 – Collector 1
Pad 2 – Base 1
Pad 3 – Base 2
Pad 4 – Collector 2
Pad 5 – Emitter 2
Pad 6 – Emitter 1
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 9338
Issue 2
Page 3 of 3
4.32 ± 0.13
(0.170 ± 0.005)
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参数对比
与2N3251DCSMG4相近的元器件有:。描述及对比如下:
型号 2N3251DCSMG4
描述 200mA, 60V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6
是否无铅 不含铅
是否Rohs认证 符合
零件包装代码 LCC
包装说明 SMALL OUTLINE, R-CDSO-N6
针数 6
Reach Compliance Code compliant
ECCN代码 EAR99
最大集电极电流 (IC) 0.2 A
集电极-发射极最大电压 60 V
配置 SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE) 100
JEDEC-95代码 MO-041BB
JESD-30 代码 R-CDSO-N6
JESD-609代码 e4
元件数量 2
端子数量 6
封装主体材料 CERAMIC, METAL-SEALED COFIRED
封装形状 RECTANGULAR
封装形式 SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED
极性/信道类型 PNP
认证状态 Not Qualified
表面贴装 YES
端子面层 GOLD
端子形式 NO LEAD
端子位置 DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED
晶体管元件材料 SILICON
标称过渡频率 (fT) 300 MHz
Base Number Matches 1
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