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POWER SILICON NPN

Item

Number

Part Number

Manufacturer

Max

(A)

V(BR)CEO

hFE

Max

(Hz)

leBO

Max

(8)

Max

(A)

(V)

Min

Max

(8)

Max

(W)

TOper

Max

ee)

Package

Style

I(C)

1 A, (Co nt' d)

SemieonTeeh

Diode Trans

Sid St Dves

Diode Trans

See Index

Sid St Dves

Motorola

CrimsonSemi

Diode Trans

See Index

Diod~

Trans

SemieonTeeh

Hybrid Semi

Sid St Dves

SemieonTeeh

Hybrid Semi

SemieonTeeh

See Index

[)iode Trans

See Index

GE Solid St

CrimsonSemi

Space Power

Natl Semi

SemieonTeeh

Sid St Dves

Hybrid Semi

New Jersey

Solid Stine

SemieonTeeh

Motorola

SemieonTeeh

See Index

Sanken Elee

See Index

CrimsonSemi

SemieonTeeh

:sOlid stine

New Jersey

Solid Stine

New Jersey

Matsushita

See Index

SemieonTeeh

Diode Trans

SemieonTeeh

:;;Ia::;t~es

40346V2

DTL1657

2N3583

SPT3440

MPSU04

DTL1638

2N6721

DTl1648

TRS4926

STI2006

MST20B

STI20

STI205

TRS2006

~~kJgg8

2N5662

SK3537

2N6722

TRS4927

g::~~

D44Rl

MJD47

STI2506

TIP47

2SC2354

2N6175

40885

D44R5

g::~~

D42Rl

2SD860

40412

40412L

40412S

40412Vl

:g:~~~~

NSD3440

SGS3440

2N3440

2N3440S

2N4064

SemiconTeeh

Semi Inc

Natl Semi

SGS·Atas

See Index

Space Power

Semelab

Motorola

See Index

~emleonleen

1.0

1.U

1.0

1.U

1.0

1.U

1.0

1.t?

1.0

1.U

1.0

175

180

200

120

200

160

2gg

200

10M

2.5M

10M

20M

35M

2.5M

5.0u

10m

20u

lOOn

1.0u

200n

5.0

105

2.0

1.0

2.0

175

140

140 J

175

140 J

175 A

175 S

175S

175

175 J

140

140 J

175

TO·37var

TO·66

TO·5

SIP·tab

TO·3

TO·237var

~~.I)I)

~gg

200

250

~g~

50M

10M

20M

30M

50M

200

300

120

200

lOOn

100u

12u

3.0u

100u

LOu

1.0u

LOu

lOOn

l.f:lm

1.0m

0.2m

100u

1.0m

50u

1.0m

500u

20u

50u

500u

20n

100u

1.0m

100u

1.0m

100u

l00u

100u

't?u

lOu

1.0u

O.lm

200n

100u

1.0u

1.0m

250n

850n

2~~

TO·37var

TO·66

TO·5

TO·37var

TO·66

TO·5

TO·18

TO·237var

TO·37var

~~g

~g~

20M

10M

50M

4.0

2.0

,.~

+g:~~

~~g

150

300

190

10M

21M

40M

1.~U

1.6u

200n

2.0u

~~g

250

:g~

55M

10M

160

15M

20M

70M

20M

3.7u

500n

2.2u

1.6

2.0

1.4

1.6

2.1

1.0

4.0

1.0

3.5

1.5

2.0

1.6

2.0

~:g

140 J

135 S

135 J

140 J

+g:~~g

TO·220

TO·252var

TO·66

TO·220AB

TO·66

TO·126var

TO·220

~:g

140

175

ig:~~g

TO·202

TO·220

TO·5

TO·39

TO·5var

TO·37var

TO·202AA

TO·218

TO·5

TO·39

TO·37var

.!.g.~var

~~g

~g~

g~j

140 J

175 J

175S

175 S

175S

175 J

I_~·~.?:var

.65u

.60u

:g~:

40390

40256

BSP20

2N4296

D44R2

2N4297

GE Solid St

Diode Trans

SemiconTeeh

NthAmerSemi

Genrl Diode

PhilipsElee

See Index

~E ~Olid_st

~~g

150

1.6k

~~g

160

150

175

300

30k

200

~~~

~:~

g~j

175 J

175

140 J

175S

140

175 S

140 J

175 J

175 A

TO·5var

TO·37(4)

7000n

1.6u

7000n

3.7u

~~~~g:

D44R7

TRS25X5

TRS25X

SemiconTech

SemiconTeeh

New Jersey

Sid St Dves

SemieonTeeh

Genrl Diode

Sid St Dves

Genrl Diode

SemieonTeeh

~atsushita

~~g

250

~g~

40M

50k

50M

1.6

2.0

1.0

1.6

TO·37(4

SOT·223

TO·66

TO·220

TO·66

-,Y·10!I)Var

TO·126var

TO·220

TO·37var

TO·5

TO·237var

TO·220AB

TO·37var

TO·5

TO·66

TO·5

TO·220

TO.37(4~

~~g~g~g

2N6723

2N6771

BUW40

TRS3742

40321

2N5661

2N5663

D44R3

Elee Trans

Space Power

Natl Semi

CrimsonSemi

See Index

GE Solid St

NthAmerSemi

See Index

~emleon!ecn

~jg

300

~~g

gg~

~:g

140 J

175

175 J

+g:~~g

50M

0.2u

0.8u

O.4u

1.5u

:g~~~~

SemieonTech

See

Index

See Index

SemiconTeeh

Solid Stine

New Jersey

~gg

300

~gg

20M

250n

1.6u

~~~

175 J

140 J

140

140 J

1.2u

+g:~9

880

参数对比

与2N3583相近的元器件有：2N3440、2N4297。描述及对比如下：

型号	2N3583	2N3440	2N4297
描述	Power Bipolar Transistor, 1A I(C), 175V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN	Small Signal Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN	Power Bipolar Transistor, 1A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN
零件包装代码	TO-66	TO-5	TO-66
包装说明	FLANGE MOUNT, O-MBFM-P2	CYLINDRICAL, O-MBCY-W3	FLANGE MOUNT, O-MBFM-P2
针数	2	3	2
Reach Compliance Code	compli	compli	compli
ECCN代码	EAR99	EAR99	EAR99
最大集电极电流 (IC)	1 A	1 A	1 A
集电极-发射极最大电压	175 V	250 V	250 V
配置	Single	Single	Single
最小直流电流增益 (hFE)	40	40	75
JEDEC-95代码	TO-66	TO-5	TO-66
JESD-30 代码	O-MBFM-P2	O-MBCY-W3	O-MBFM-P2
元件数量	1	1	1
端子数量	2	3	2
最高工作温度	200 °C	200 °C	175 °C
封装主体材料	METAL	METAL	METAL
封装形状	ROUND	ROUND	ROUND
封装形式	FLANGE MOUNT	CYLINDRICAL	FLANGE MOUNT
极性/信道类型	NPN	NPN	NPN
最大功率耗散 (Abs)	35 W	5 W	2 W
认证状态	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO
端子形式	PIN/PEG	WIRE	PIN/PEG
端子位置	BOTTOM	BOTTOM	BOTTOM
晶体管元件材料	SILICON	SILICON	SILICON
标称过渡频率 (fT)	10 MHz	15 MHz	20 MHz
Base Number Matches	1	1	1
是否无铅	含铅	含铅	-
是否Rohs认证	不符合	不符合	-
JESD-609代码	e0	e0	-
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	-
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	-