Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN
器件标准:
下载文档型号 | 2N3741LEADFREE | 2N3740ALEADFREE | 2N3740LEADFREE |
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描述 | Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN | Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, TO-66, 2 PIN |
是否无铅 | 不含铅 | 不含铅 | 不含铅 |
是否Rohs认证 | 符合 | 符合 | 符合 |
零件包装代码 | TO-66 | TO-66 | TO-66 |
包装说明 | TO-66, 2 PIN | TO-66, 2 PIN | TO-66, 2 PIN |
针数 | 2 | 2 | 2 |
Reach Compliance Code | _compli | _compli | _compli |
ECCN代码 | EAR99 | EAR99 | EAR99 |
外壳连接 | COLLECTOR | COLLECTOR | COLLECTOR |
最大集电极电流 (IC) | 4 A | 4 A | 4 A |
集电极-发射极最大电压 | 80 V | 60 V | 60 V |
配置 | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 10 | 10 | 10 |
JEDEC-95代码 | TO-66 | TO-66 | TO-66 |
JESD-30 代码 | O-MBFM-P2 | O-MBFM-P2 | O-MBFM-P2 |
JESD-609代码 | e3 | e3 | e3 |
元件数量 | 1 | 1 | 1 |
端子数量 | 2 | 2 | 2 |
封装主体材料 | METAL | METAL | METAL |
封装形状 | ROUND | ROUND | ROUND |
封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
峰值回流温度(摄氏度) | 260 | 260 | 260 |
极性/信道类型 | PNP | PNP | PNP |
认证状态 | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO |
端子面层 | MATTE TIN (315) | MATTE TIN (315) | MATTE TIN (315) |
端子形式 | PIN/PEG | PIN/PEG | PIN/PEG |
端子位置 | BOTTOM | BOTTOM | BOTTOM |
处于峰值回流温度下的最长时间 | 10 | 10 | 10 |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 4 MHz | 4 MHz | 4 MHz |
Base Number Matches | 1 | 1 | 1 |