SILICON DUAL MATCHED
PNP TRANSISTORS
2N3810
•
•
•
Matched Dual Transistor.
Hermetic Metal TO78 Package.
Suitable For High Gain, Low Noise, Differential Amplifier,
Applications.
Screening Options Available
•
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
TA = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
Each Side
Total Device
-60V
-60V
-5V
-50mA
500mW
600mW
(1)
2.86mW/°C 3.43mW/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
(Each Side)
Symbols
R
θJA
Parameters
Thermal Resistance, Junction To Ambient
Min.
1Typ.
Max.
350
Units
°C/W
Notes
(1) Total device power dissipation limited by package.
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Semelab
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 8294
Issue 1
Page 1 of 4
Website:
http://www.semelab-tt.com
SILICON DUAL MATCHED
PNP TRANSISTORS
2N3810
ELECTRICAL CHARACTERISTICS
(Each Side, TA = 25°C unless otherwise stated)
Symbols
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
(2)
Parameters
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector-Cut-Off
Current
Emitter-Cut-Off
Current
Test Conditions
IC = -10µA
IC = -10mA
IE = -10µA
VCB = -50V
IE = 0
IB = 0
IC = 0
IE = 0
TA = 150°C
VEB = -4V
IC = -10µA
IC = -100µA
IC = 0
VCE = -5V
VCE = -5V
TA = -55°C
IC = -500µA
IC = -1.0mA
IC = -10mA
VCE = -5V
VCE = -5V
VCE = -5V
VCE = -5V
IB = -10µA
IB = = -100µA
IB = -10µA
IB = = -100µA
Min.
-60
-60
-5
Typ
Max.
Units
V
-10
-10
-20
100
150
60
150
150
125
-0.7
-0.7
-0.8
-0.2
-0.25
450
450
450
nA
µA
nA
hFE
(2)
Forward-current
transfer ratio
VBE
(2)
Base-Emitter Voltage
(2)
IC = -100µA
IC = -100µA
IC = -1.0mA
IC = -100µA
IC = -1.0mA
VBE(sat)
Base-Emitter
Saturation Voltage
Collector-Emitter
Saturation Voltage
V
VCE(sat)
(2)
ELECTRICAL MATCHING CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols
hFE1
hFE2
(3)
Parameters
Forward-current
transfer ratio (gain
ratio)
Base-Emitter Voltage
Differential
Test Conditions
IC = -100µA
VCE = -5V
VCE = -5V
Min.
0.9
Typ
Max.
1.0
Units
|VBE1-VBE2|
IC = -10µA to -10mA
VCE = -5V
VCE = -5V
IC = -100µA
IC = -100µA
TA2 = -55°C
IC = -100µA
TA2 = 125°C
5
3
0.8
mV
|
∆
(VBE1-VBE2)
∆
TA|
Base-Emitter Voltage
Differential Change
Due To Temperature
TA1 = 25°C
VCE = -5V
TA1 = 25°C
mV
1.0
Notes
Notes
(2) Pulse Width
≤
300us,
δ ≤
2%
(3) The lower of the two readings is taken as hFE1
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8294
Issue 1
Page 2 of 4
SILICON DUAL MATCHED
PNP TRANSISTORS
2N3810
DYNAMIC CHARACTERISTICS
Symbols
Parameters
Test Conditions
IC = -500µA
|hfe|
Small signal forward-current
transfer ratio
f = 30MHz
IC = -1.0mA
f = 100MHz
Cobo
Cibo
hie
(4)
Min.
1.0
Typ
Max.
Units
VCE = -5V
VCE = -5V
VCB = -5V
VEB = -0.5V
1.0
5
Output Capacitance
IE = 0
f = 1.0MHz
IC = 0
f = 1.0MHz
4
pF
15
3
30
60
25
150
600
7
K
Input Capacitance
Input Impedance
Output Admittance
Voltage Feedback Ratio
Small Signal Current Gain
hoe
hre
(4)
IC = -1.0mA
f = 1.0KHz
VCE = -10V
5
µ
hmos
x 10-4
(4)
hfe
f=100Hz
BW=20Hz
Noise Figure
VCE = -10V
IC = -100
µ
A
RG = 3K
f=1.0KHz
BW=200Hz
f=10KHz
BW=2KHz
Noise Figure (Broadband)
Notes
Notes
(4) By design only, not a production test.
NF
(4)
3
dB
2.5
3.5
f=10Hz to 15.7KHz
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8294
Issue 1
Page 3 of 4
SILICON DUAL MATCHED
PNP TRANSISTORS
2N3810
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.335)
9.40 (0.370)
7.75 (0.305)
8.51 (0.335)
4.20 (0.165)
4.69 (0.185)
1.02
(0.040)
Max.
12.7 (0.500)
Min.
0.41 (0.016)
0.53 (0.021)
5.08
(0.200)
2.54
(0.100)
2.54
(0.100)
3
2
4
5
6
1
0.74 (0.029)
1.14 (0.045)
45°
0.71 (0.028)
0.86 (0.034)
TO-78 (MO-002AG)
Underside View
Pin 1 – Collector 1
Pin 2 – Base 1
Pin 3 – Emitter 1
Pin 4 – Emitter 2
Pin 5 – Base 2
Pin 6 – Collector 2
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8294
Issue 1
Page 4 of 4
