SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
B
2N3906E
EPITAXIAL PLANAR PNP TRANSISTOR
FEATURES
Low Leakage Current
A
G
H
2
1
D
3
DIM
A
B
C
D
E
G
H
J
: I
CEX
=-50nA(Max.), I
BL
=-50nA(Max.)
@V
CE
=-30V, V
EB
=-3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage
Low Collector Output Capacitance
: C
ob
=4.5pF(Max.) @V
CB
=-5V.
Complementary to 2N3904E.
: V
CE(sat)
=-0.4V(Max.) @I
C
=-50mA, I
B
=-5mA.
MILLIMETERS
_
1.60 + 0.10
_
0.85 + 0.10
_
0.70 + 0.10
0.27+0.10/-0.05
_
1.60 + 0.10
_
1.00 + 0.10
0.50
_
0.13 + 0.05
J
C
1. EMITTER
2. BASE
3. COLLECTOR
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
-40
-40
-5
-200
-50
100
150
-55 150
UNIT
V
V
V
mA
mA
mW
ESM
Marking
Type Name
ZA
2003. 12. 12
Revision No : 0
1/4
2N3906E
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Base Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
SYMBOL
I
CEX
I
BL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
h
FE
(1)
h
FE
(2)
DC Current Gain
*
h
FE
(3)
h
FE
(4)
h
FE
(5)
Collector-Emitter Saturation Voltage
*
V
CE(sat)
1
V
CE(sat)
2
V
BE(sat)
1
V
BE(sat)
2
f
T
C
ob
C
ib
h
ie
h
re
h
fe
h
oe
NF
V
CE
=-5V, I
C
=-0.1mA,
Rg=1k
, f=10Hz 15.7kHz
V
out
V
in
275Ω
TEST CONDITION
V
CE
=-30V, V
EB
=-3V
V
CE
=-30V, V
EB
=-3V
I
C
=-10 A, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10 A, I
C
=0
V
CE
=-1V, I
C
=-0.1mA
V
CE
=-1V, I
C
=-1mA
V
CE
=-1V, I
C
=-10mA
V
CE
=-1V, I
C
=-50mA
V
CE
=-1V, I
C
=-100mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
V
CE
=-20V, I
C
=-10mA, f=100MHz
V
CB
=-5V, I
E
=0, f=1MHz
V
BE
=-0.5V, I
C
=0, f=1MHz
MIN.
-
-
-40
-40
-5.0
60
80
100
60
30
-
-
-0.65
-
250
-
-
2.0
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
-50
-50
-
-
-
-
-
300
-
-
-0.25
-0.4
-0.85
-0.95
-
4.5
10
12
10
400
60
4.0
UNIT
nA
nA
V
V
V
V
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small-Signal Current Gain
Collector Output Admittance
Noise Figure
*
V
MHz
pF
pF
k
x10
-4
V
CE
=-10V, I
C
=-1mA, f=1kHz
1.0
100
3.0
-
dB
Delay Time
t
d
10kΩ
C Total 4pF
-
-
35
Rise Time
Switching Time
Storage Time
t
r
0.5V
-10.6V
300ns
V
CC
=-3.0V
0
t
r
,t
f
< 1ns, Du=2%
-
-
35
nS
V
out
V
in
275Ω
t
stg
10kΩ
1N916
or equiv.
-
C Total 4pF
-
225
Fall Time
t
f
9.1V
-10.9V
20µs
V
CC
=-3.0V
0
t
r
,t
f
< 1ns, Du=2%
-
-
75
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
2003. 12. 12
Revision No : 0
2/4
2N3906E
I
C
- V
CE
-100
-1
-0.9
h
FE
- I
C
1k
-0.7
-0.6
-0.5
DC CURRENT GAIN h
FE
-0.8
500
300
Ta=125 C
Ta=25 C
Ta=-55 C
COMMON EMITTER
V
CE
=-1V
COLLECTOR CURRENT I
C
(mA)
-80
-60
100
50
30
-0.4
-40
-0.3
-0.2
-20
I
B
=-0.1mA
COMMON EMITTER
Ta=25 C
10
-0.1
-0.3
-1
-3
-10
-30
-100
-300
COLLECTOR CURRENT I
C
(mA)
-4
0
0
-1
-2
-3
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
V
CE(sat)
- I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CE(sat)
(V)
-1
-0.5
-0.3
COMMON EMITTER
I
C
/I
B
=10
-0.1
-0.05
-0.03
Ta=1
25 C
Ta=25 C
Ta=-55 C
-0.01
-0.1
-0.3
-1
-3
-10
-30
-100
-300
COLLECTOR CURRENT I
C
(mA)
I
C
- V
BE
-200
COMMON EMITTER
V
CE
=-1V
COLLECTOR CURRENT I
C
(mA)
-160
V
BE(sat)
- I
C
-10
BASE-EMITTER SATURATION
VOLTAGE V
BE(sat)
(V)
COMMON EMITTER
I
C
/I
E
=10
-120
-5
-3
5 C
Ta=25
C
Ta=-55
C
-80
Ta=12
-1
-0.5
-0.3
Ta=-55 C
Ta=25 C
Ta=125 C
-40
0
0
-0.4
-0.8
-1.2
-1.6
BASE-EMITTER VOLTAGE V
BE
(V)
-0.1
-0.1
-0.3
-1
-3
-10
-30
-100
-300
COLLECTOR CURRENT I
C
(mA)
2003. 12. 12
Revision No : 0
3/4
2N3906E
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
V
CE
- I
B
-1.0
-0.8
I
C
=1mA
I
C
=10mA
I
C
=30mA
I
C
=100mA
C
ob
- V
CB
, C
50
30
CAPACITANCE C
ob
(pF)
C
ib
(pF)
ib
- V
EB
f=1MHz
Ta=25 C
-0.6
-0.4
-0.2
10
5
3
C
ib
C
ob
0
-0.001
COMMON
EMITTER
Ta=25 C
1
0.5
-0.1
-0.3
-1
-3
-10
-30
-0.01
-0.1
-1
-10
BASE CURRENT I
B
(mA)
REVERSE VOLTAGE V
CB
(V)
V
EB
(V)
2003. 12. 12
Revision No : 0
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