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2N3956(TO-78)

Transistor

器件类别:分立半导体    晶体管   

厂商名称:Micross

厂商官网:https://www.micross.com

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2N3956
MONOLITHIC DUAL
N-CHANNEL JFET
The 2N3956 is a Low Noise, Low Drift, Monolithic Dual N-Channel JFET
The 2N3956 family are matched JFET pairs for
differential amplifiers. The 2N3956 family of general
purpose JFETs is characterized for low and medium
frequency differential amplifiers requiring low offset
voltage, drift, noise and capacitance
The 2N3956 family also exhibits low capacitance - 6pF
max and a spot noise figure of -0.5dB max. The part
offers a superior tracking ability.
The hermetically sealed TO-71 and TO-78 packages
are well suited for high reliability and harsh environment
applications.
(See Packaging Information).
FEATURES 
LOW DRIFT 
LOW LEAKAGE 
LOW NOISE 
ABSOLUTE MAXIMUM RATINGS  
@ 25°C (unless otherwise noted) 
|∆ V
GS1‐2
 /∆T|= 5µV/°C max.
I
G
 = 20pA TYP. 
e
n
 = 10nV/√Hz TYP. 
2N3956 Applications:
Wideband Differential Amps
High Input Impedance Amplifiers
Maximum Temperatures 
Storage Temperature 
‐65°C to +200°C 
Operating Junction Temperature 
+150°C 
Maximum Voltage and Current for Each Transistor – Note 1 
‐V
GSS
 
Gate Voltage to Drain or Source 
60V 
‐V
DSO
 
Drain to Source Voltage 
60V 
‐I
G(f)
 
Gate Forward Current 
50mA 
Maximum Power Dissipation 
Device Dissipation @ Free Air – Total                 400mW @ 25°C 
 
MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED
SYMBOL 
CHARACTERISTICS  VALUE  UNITS  CONDITIONS 
| V 
GS1‐2 
/ T| max. 
DRIFT VS. 
50 
µV/°C  V
DG
=20V, I
D
=200µA 
TEMPERATURE 
T
A
=‐55°C to +125°C 
| V 
GS1‐2 
| max. 
OFFSET VOLTAGE 
15 
mV 
V
DG
=20V, I
D
=200µA 
MAX. 
‐‐ 
‐‐ 
 
3000 
1000 
 
 
4.5 
 
50 
50 
‐‐ 
100 
 
0.1 
 
‐‐ 
‐‐ 
 
0.5 
15 
 
‐‐ 
UNITS 
 
µmho 
µmho 
 
mA 
 
 
pA 
nA 
pA 
pA 
 
µmho 
µmho 
µmho 
 
dB 
dB 
 
dB 
nV/√Hz 
 
pF 
pF 
pF 
CONDITIONS 
V
DS 
= 0                  I
D
=1µA 
      I 
G
= 1nA               I
D
= 0               I
S
= 0 
 
V
DG
= 20V         V
GS
= 0V      f = 1kHz 
     V
DG
= 20V         I
D
= 200µA     
 
 
V
DG
= 20V              V
GS
= 0V 
 
 
V
DS
= 20V               I
D
= 1nA 
              V
DS
=20V                 I
D
=200µA 
 
V
DG
= 20V          I
D
= 200µA 
T
A
= +125°C
 
V
DG
= 10V         I
D
= 200µA 
V
DG
= 20V              V
DS
= 0 
 
V
DG
= 20V              V
GS
= 0V 
V
DG
=  20V           I
D
= 200µA 
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTICS 
MIN. 
TYP. 
BV
GSS
 
Breakdown Voltage 
60 
‐‐ 
BV
GGO
 
Gate‐To‐Gate Breakdown 
60 
‐‐ 
 
TRANSCONDUCTANCE 
 
 
Y
fSS
 
Full Conduction 
1000 
2000 
Y
fS
 
Typical Operation 
500 
700 
|Y
FS1‐2 
/ Y
 FS
Mismatch 
‐‐ 
0.6 
 
DRAIN CURRENT 
 
 
I
DSS
 
Full Conduction 
0.5 
|I
DSS1‐2 
/ I
DSS
Mismatch at Full Conduction 
‐‐ 
GATE VOLTAGE 
 
 
 
V
GS
(off) or V
p
 
Pinchoff voltage 
V
GS
(on) 
Operating Range 
0.5 
‐‐ 
GATE CURRENT 
 
 
 
‐I
G
 
Operating 
‐‐ 
20 
‐I
G
 
High Temperature 
‐‐ 
‐‐ 
‐I
G
 
Reduced  V
DG
 
‐‐ 
‐I
GSS
 
At Full Conduction 
‐‐ 
‐‐ 
 
OUTPUT CONDUCTANCE 
 
 
Y
OSS
 
Full Conduction 
‐‐ 
‐‐ 
Y
OS
 
Operating 
‐‐ 
0.1 
|Y
OS1‐2
Differential 
‐‐ 
0.01 
 
COMMON MODE REJECTION 
 
 
CMR 
‐20 log | V
GS1‐2
/ V
DS
‐‐ 
100 
CMR 
‐20 log | V
GS1‐2
/ V
DS
‐‐ 
75 
 
NOISE 
 
 
NF 
Figure 
‐‐ 
‐‐ 
e
n
 
Voltage 
‐‐ 
‐‐ 
 
CAPACITANCE 
 
 
C
ISS
 
Input 
‐‐ 
‐‐ 
C
RSS
 
Reverse Transfer 
‐‐ 
‐‐ 
C
DD
 
Drain‐to‐Drain 
‐‐ 
0.1 
Note 1 – These ratings are limiting values above which the serviceability of any semiconductor may be impaired
Click To Buy
 
∆V
DS 
= 10 to 20V        I
D
=200µA 
∆V
DS 
= 5 to 10V        I
D
=200µA 
V
DS
= 20V      V
GS
= 0V       R
G
= 10MΩ 
f= 100Hz           NBW= 6Hz 
V
DS
=20V   I
D
=200µA   f=10Hz  NBW=1Hz 
 
V
DS
= 20V       V
GS
= 0V       f= 1MHz 
V
DG
=  20V           I
D
= 200µA 
TO-71 / TO-78 (Bottom View)
Available Packages:
2N3956 in TO-71 / TO-78
2N3956 available as bare die
Please contact
Micross
for full package and die dimensions
Micross Components Europe
Tel: +44 1603 788967
Email:
chipcomponents@micross.com
Web:
http://www.micross.com/distribution
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
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参数对比
与2N3956(TO-78)相近的元器件有:2N3956(TO-71)、2N3956-TO-78、2N3956-TO-71。描述及对比如下:
型号 2N3956(TO-78) 2N3956(TO-71) 2N3956-TO-78 2N3956-TO-71
描述 Transistor Transistor TRANSISTOR 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-78, HERMETIC SEALED, TO-78, 6 PIN, FET General Purpose Small Signal TRANSISTOR 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-71, HERMETIC SEALED, TO-71, 6 PIN, FET General Purpose Small Signal
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