Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
RMS power dissipation
RMS emitter current
Peak pulse emitter current
Emitter reverse voltage
Interbase voltage
Storage temperature range
(2)
(1)
Symbol
P
D
I
e
i
e
V
B2E
V
B2B1
T
stg
Value
360
60
1
30
35
-65 to 200
Unit
mW
mA
Amp
Volts
Volts
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Characteristic
Intrinsic standoff ratio
V
B2B1
= 10V
(1)
Interbase resistance
V
B2B1
= 3V, I
E
= 0
Interbase resistance temperature coefficient
V
B2B1
= 3V, I
E
= 0, T
A
= -65 to +100°C
Emitter saturation voltage
V
B2B1
= 10V, I
E
= 50mA
(2)
Modulated interbase current
V
B2B1
= 10V, I
E
= 50mA
Emitter reverse current
V
B2E
= 30V, I
B1
= 0
V
B2E
= 30V, I
B1
= 0, T
A
= 125°C
Peak point emitter current
V
B2B1
= 25V
Valley point current
V
B2B1
= 20V, R
B2
= 100Ω
(2)
Base one peak pulse voltage
(3)
Figure 3
Maximum oscillation frequency
Figure 4
Symbol
ŋ
R
BB
αR
BB
V
EB1(sat)
I
B2(mod)
Min
0.68
4
0.4
-
12
-
-
-
1
6
-
Typ
-
6
-
2.5
15
5
-
0.6
4
8
400
Max
0.82
8
0.9
3
-
10
1
2
10
-
-
Unit
-
kΩ
%/°C
Volts
mA
I
EB20
nA
µA
µA
mA
Volts
kHz
I
P
I
V
V
OB1
f
(max)
Note 1: Intrinsic standoff ratio,
ŋ is defined by equation:
ŋ = V
P
– (V
EB1
)
V
B2B1
Where: V
P
= Peak point emitter voltage
V
B2B1
= Interbase voltage
V
F
= emitter to base-one junction diode drop (0.45V @ 10µA)
Note 2: Use pulse techniques: PW ≈ 300µs duty cycle ≤ 2% to avoid internal heating due to interbase modulation which may result in erroneous readings.
Note 3: Base-one peak pulse voltage is measured in circuit of Figure 3. This specification is used to ensure minimum pulse amplitude for applications in ACR firing circuits and other types of pulse
