Power Bipolar Transistor, 0.5A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-39, 3 PIN
厂商名称:TT Electronics plc
厂商官网:http://www.ttelectronics.com/
器件标准:
下载文档型号 | 2N5011R1 | 2N5011 |
---|---|---|
描述 | Power Bipolar Transistor, 0.5A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-39, 3 PIN | Small Signal Bipolar Transistor, 1-Element, Silicon, TO-205AD, HERMETIC SEALED, METAL, TO-39, 3 PIN |
是否Rohs认证 | 符合 | 不符合 |
包装说明 | HERMETIC SEALED, METAL, TO-39, 3 PIN | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code | compliant | compliant |
最大集电极电流 (IC) | 0.5 A | 0.5 A |
集电极-发射极最大电压 | 600 V | 600 V |
配置 | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 30 | 30 |
JEDEC-95代码 | TO-205AD | TO-205AD |
JESD-30 代码 | O-MBCY-W3 | O-MBCY-W3 |
元件数量 | 1 | 1 |
端子数量 | 3 | 3 |
封装主体材料 | METAL | METAL |
封装形状 | ROUND | ROUND |
封装形式 | CYLINDRICAL | CYLINDRICAL |
峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED |
极性/信道类型 | NPN | NPN |
认证状态 | Not Qualified | Not Qualified |
表面贴装 | NO | NO |
端子形式 | WIRE | WIRE |
端子位置 | BOTTOM | BOTTOM |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED |
晶体管元件材料 | SILICON | SILICON |
标称过渡频率 (fT) | 20 MHz | 20 MHz |
Base Number Matches | 1 | 1 |