2N5116
P-CHANNEL JFET
Linear Systems replaces discontinued Siliconix 2N5116
This analog switch is designed for inverting switching
into inverting input of an Operational Amplifier.
The hermetically sealed TO-18 package is well suited
for hi-reliability and harsh environment applications.
(See Packaging Information).
FEATURES
DIRECT REPLACEMENT FOR SILICONIX 2N5116
LOW ON RESISTANCE
r
DS(on)
≤ 150Ω
LOW CAPACITANCE
6pF
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
‐55°C to +200°C
2N5116 Benefits:
Operating Junction Temperature
‐55°C to +200°C
Low On Resistance
Maximum Power Dissipation
I
D(off)
≤
500 pA
Continuous Power Dissipation
500mW
Switches directly from TTL logic
MAXIMUM CURRENT
2N5116 Applications:
Gate Current (Note 1)
I
G
= ‐50mA
Analog Switches
MAXIMUM VOLTAGES
Commutators
Gate to Drain Voltage
V
GDS
= 30V
Choppers
Gate to Source Voltage
V
GSS
= 30V
2N5116 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
MAX
UNITS
CONDITIONS
BV
GSS
Gate to Source Breakdown Voltage
30
‐‐
‐‐
I
G
= 1µA, V
DS
= 0V
V
GS(off)
Gate to Source Cutoff Voltage
1
‐‐
4
V
DS
= ‐15V, I
D
= ‐1nA
V
V
GS(F)
Gate to Source Forward Voltage
‐‐
‐0.7
‐1
I
G
= ‐1mA, V
DS
= 0V
‐‐
‐1.0
‐‐
V
GS
= 0V, I
D
= ‐15mA
V
DS(on)
Drain to Source On Voltage
‐‐
‐0.7
‐‐
V
GS
= 0V, I
D
= ‐7mA
‐‐
‐0.5
‐0.6
V
GS
= 0V, I
D
= ‐3mA
I
DSS
Drain to Source Saturation Current (Note 2)
‐5
‐‐
‐25
mA
V
DS
= ‐15V, V
GS
= 0V
I
GSS
Gate Reverse Current
‐‐
5
500
V
GS
= 20V, V
DS
= 0V
I
G
Gate Operating Current
‐‐
‐5
‐‐
V
DS
= ‐15V, I
D
= ‐1mA
pA
‐‐
‐10
‐‐
V
DS
= ‐15V, V
GS
= 12V
I
D(off)
Drain Cutoff Current
‐‐
‐10
‐‐
V
DS
= ‐15V, V
GS
= 7V
‐‐
‐10
‐500
V
DS
= ‐15V, V
GS
= 5V
r
DS(on)
Drain to Source On Resistance
‐‐
‐‐
150
Ω
I
D
= ‐1mA, V
GS
= 0V
2N5116 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN
TYP.
MAX
UNITS
CONDITIONS
g
fs
Forward Transconductance
‐‐
4.5
‐‐
mS
V
DS
= ‐15V, I
D
= 1mA , f = 1kHz
g
os
Output Conductance
‐‐
20
‐‐
µS
r
DS(on)
Drain to Source On Resistance
‐‐
‐‐
150
Ω
I
D
= 0A, V
GS
= 0V, f = 1kHz
C
iss
Input Capacitance
‐‐
20
25
V
DS
= ‐15V, V
GS
= 0V, f = 1MHz
pF
‐‐
5
‐‐
V
DS
= 0V, V
GS
= 12V, f = 1MHz
C
rss
Reverse Transfer Capacitance
‐‐
6
‐‐
V
DS
= 0V, V
GS
= 7V, f = 1MHz
‐‐
6
7
V
DS
= 0V, V
GS
= 5V, f = 1MHz
e
n
Equivalent Noise Voltage
‐‐
20
‐‐
nV/√Hz
V
DG
= 10V, I
D
= 10mA , f = 1kHz
2N5116 SWITCHING CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
UNITS
CONDITIONS
Click To Buy
Turn On Time
Turn On Rise Time
Turn Off Time
Turn Off Fall Time
12
30
10
50
ns
V
GS
(L) = ‐5V
V
GS
(H) = 0V
See Switching Circuit
‐6V
8V
2kΩ
390Ω
‐3mA
Available Packages:
2N5116 in TO-18
2N5116 in bare die.
Please contact Micross for full
package and die dimensions
TO-18 (Bottom View)
t
d(on)
t
r
t
d(off)
t
f
Note 1 ‐ Absolute maximum ratings are limiting values above which 2N5116 serviceability may be impaired. Note 2 – Pulse test: PW≤ 300 µs, Duty Cycle ≤ 3%
2N5116 SWITCHING CIRCUIT PARAMETERS
V
DD
V
GG
R
L
R
G
I
D(on)
SWITCHING TEST CIRCUIT
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or
other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.
