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2N5154

Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,

器件类别：分立半导体    晶体管   

厂商名称：Microsemi

厂商官网：https://www.microsemi.com

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器件参数
参数名称
属性值
是否Rohs认证
不符合
Objectid
2112594425
Reach Compliance Code
unknown
ECCN代码
EAR99
最大集电极电流 (IC)
2 A
集电极-发射极最大电压
80 V
配置
SINGLE
最小直流电流增益 (hFE)
40
JEDEC-95代码
TO-39
JESD-30 代码
O-MBCY-W3
JESD-609代码
e0
元件数量
1
端子数量
3
最高工作温度
200 °C
封装主体材料
METAL
封装形状
ROUND
封装形式
CYLINDRICAL
极性/信道类型
NPN
最大功率耗散 (Abs)
11.8 W
认证状态
Not Qualified
表面贴装
NO
端子面层
TIN LEAD
端子形式
WIRE
端子位置
BOTTOM
晶体管元件材料
SILICON
文档预览
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/544
DEVICES
LEVELS
2N5152
2N5152L
2N5152U3
2N5154
2N5154L
2N5154U3
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
(1)
@ T
A
= +25°C
@ T
C
= +25°C
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
J
, T
stg
R
θJC
Value
80
100
5.5
2.0
1.0
10
-65 to +200
10
1.7 (U3)
Unit
Vdc
Vdc
Vdc
Adc
W
°C
°C/W
TO-5
2N5152L, 2N5154L
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to Case
(1)
Note:
1)
2)
See 19500/544 for thermal derating curves.
This value applies for P
W
≤
8.3ms, duty cycle
≤
1%.
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 100mAdc, I
B
= 0
Emitter-Base Cutoff Current
V
EB
= 4.0Vdc, I
C
= 0
V
EB
= 5.5Vdc, I
C
= 0
Collector-Emitter Cutoff Current
V
CE
= 60Vdc, V
BE
= 0
V
CE
= 100Vdc, V
BE
= 0
Collector-Emitter Cutoff Current
V
CE
= 40Vdc, I
B
= 0
ON CHARACTERTICS
Forward-Current Transfer Ratio
I
C
= 50mAdc, V
CE
= 5Vdc
I
C
= 2.5Adc, V
CE
= 5Vdc
V
(BR)CEO
80
Vdc
TO-39 (TO-205AD)
2N5152, 2N5154
Symbol
Min.
Max.
Unit
I
EBO
1.0
1.0
1.0
1.0
50
µAdc
mAdc
µAdc
mAdc
µAdc
I
CES
I
CEO
2N5152
2N5154
2N5152
2N5154
h
FE
20
50
30
70
---
---
90
200
U-3
2N5152U3, 2N5154U3
T4-LDS-0039 Rev. 1 (080797)
Page 1 of 2
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/544
ELECTRICAL CHARACTERISTICS (con’t)
Parameters / Test Conditions
I
C
= 5Adc, V
CE
= 5Vdc
Collector-Emitter Saturation Voltage
I
C
= 2.5Adc, I
B
= 250mAdc
I
C
= 5.0Adc, I
B
= 500mAdc
Base-Emitter Voltage Non-Saturation
I
C
= 2.5Adc, V
CE
= 5Vdc
Base-Emitter Saturation Voltage
I
C
= 2.5Adc, I
B
= 250mAdc
I
C
= 5.0Adc, I
B
= 500mAdc
2N5152
2N5154
Symbol
h
FE
Min.
20
40
Max.
Unit
V
CE(sat)
0.75
1.5
1.45
Vdc
V
BE
Vdc
V
BE(sat)
1.45
2.2
Vdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 500mAdc, V
CE
= 5Vdc, f = 10MHz
2N5152
2N5154
Small-signal short Circuit Forward-Current Transfer Ratio
I
C
= 100mAdc, V
CE
= 5Vdc, f = 1KHz
2N5152
2N5154
Output Capacitance
V
CB
= 10Vdc, I
E
= 0, f = 1.0MHz
Symbol
Min.
Max.
Unit
|h
fe
|
6
7
h
fe
C
obo
20
50
250
pF
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
I
C
= 5Adc, I
B1
= 500mAdc
Turn-Off Time
R
L
= 6Ω
Storage Time
Fall Time
I
B2
= -500mAdc
V
BE(OFF)
= 3.7Vdc
Symbol
t
on
t
off
t
s
t
f
Min.
Max.
0.5
1.5
1.4
0.5
Unit
μs
μs
μs
μs
SAFE OPERATING AREA
DC Tests
T
C
= +25°C, 1 Cycle, t
P
= 1.0s
Test 1
V
CE
= 5.0Vdc, I
C
= 2.0Adc
Test 2
V
CE
= 32Vdc, I
C
= 310mAdc
Test 3
V
CE
= 80Vdc, I
C
= 12.5mAdc
T4-LDS-0039 Rev. 1 (080797)
Page 2 of 2
查看更多>
参数对比
与2N5154相近的元器件有：BLU0603ER-2180-CB15Q、JANTX2N5154、Jantx2N5152L、Jantxv2N5154、2N5152、Jantxv2N5152。描述及对比如下：
型号 2N5154 BLU0603ER-2180-CB15Q JANTX2N5154 Jantx2N5152L Jantxv2N5154 2N5152 Jantxv2N5152
描述 Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, Fixed Resistor, Thin Film, 0.1W, 218ohm, 75V, 0.25% +/-Tol, 15ppm/Cel, 0603, Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN Bipolar Transistors - BJT Power BJT Power Bipolar Transistor, 2A I(C), 80V V(BR)CEO, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN Bipolar Transistors - BJT Power BJT Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, NPN, Silicon, TO-5, TO-5, 3 PIN
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合
Reach Compliance Code unknown compliant unknown unknown not_compliant compliant unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
JESD-609代码 e0 e0 e0 e0 e0 e0 e0
端子数量 3 2 3 3 3 3 3
封装形式 CYLINDRICAL SMT CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
端子面层 TIN LEAD Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) TIN LEAD TIN LEAD
Objectid 2112594425 737088343 2124504154 - 2124504706 - 1439170309
最大集电极电流 (IC) 2 A - 2 A 2 A 2 A 2 A 2 A
集电极-发射极最大电压 80 V - 80 V 80 V 80 V 80 V 80 V
最小直流电流增益 (hFE) 40 - 70 30 70 30 20
JEDEC-95代码 TO-39 - TO-5 TO-5 TO-5 TO-5 TO-205AD
JESD-30 代码 O-MBCY-W3 - O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
封装主体材料 METAL - METAL METAL METAL METAL METAL
封装形状 ROUND - ROUND ROUND ROUND ROUND ROUND
极性/信道类型 NPN - NPN NPN NPN NPN NPN
认证状态 Not Qualified - Qualified Qualified Qualified Not Qualified Qualified
表面贴装 NO - NO NO NO NO NO
端子形式 WIRE - WIRE WIRE WIRE WIRE WIRE
端子位置 BOTTOM - BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
晶体管元件材料 SILICON - SILICON SILICON SILICON SILICON SILICON
包装说明 - - TO-5, 3 PIN TO-5, 3 PIN CYLINDRICAL, O-MBCY-W3 TO-5, 3 PIN TO-39, 3 PIN
参考标准 - - MIL MIL MIL - MIL-19500
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