8/2014
2N5196, 2N5197, 2N5198, 2N5199
N-Channel Dual Silicon Junction Field-Effect Transistor
∙
Differencial Inputs
Absolute maximum ratings at T
A
= 25
o
C
Reverse Gate Source & Gate Drain Voltage
-50V
Continuous Forward Gate Current
50 mA
Continuous Device Power Dissipation
300 mW
Power Derating
2.6 mW/
o
C
Storage Temperature Range
-65
o
C to +150
o
C
2N5196, 2N5197, 2N5198, 2N5199
At 25
o
C free air temperature
Static Electrical Characteristics
Gate Source Breakdown Voltage V
(BR)GSS
Gate Reverse Current
Gate Source Cutoff Voltage
Drain Saturation Current
(pulsed)
I
GSS
V
GS(OFF)
I
DSS
Min
-50
Typ
Max
-25
Unit
V
pA
V
mA
Process NJ16
Test Conditions
I
G
= -1 uA, V
DS
= 0 V
V
GS
= -10 V, V
DS
= 0 V
V
DS
= 10 V, V
GS
= 0 V
V
DS
= 10 V, V
GS
= 0 V
-0.7
0.7
-4
7
Dynamic Electrical Characteristics
Common-Source Forward
gfs
Transconductance
Common-Source Input
Capacitance
Common-Source Reverse
Transfer Capacitance
Equivalent Short Circuit Input
Noise Voltage
C
iss
C
rss
1
4
6
2
20
mS
pF
pF
nV/√Hz
VDS = 10 V, ID = 5 mA
V
DS
= -10 V, V
GS
= 1 V
V
DS
= 10 V, I
D
= 5 mA
V
DS
= 10 V, I
D
= 5 mA
2N5199
Min
Max
15
40
Unit
s
mV
μV/°
C
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
~e
N
2N5196
Min
Max
2N5197
Min
Max
5
10
2N5198
Min
Max
10
20
Test
Conditions
V
DS
= 10 V,
I
D
= -10 mA
VDG = 10 V,
ID = 30 μA
Differencial Gate-Source
Voltage
Differencial Gate Source
Voltage with Temperature
(V
GS1
-V
GS2
)
Δ│VGS1-VGS2│
ΔT
5
5
Surface Mount Version
:
SMP5196, SMP5197,
SMP5198, SMP5199
715 N. Glenville Dr., Ste. 400
Richardson, TX 75089
(972) 238-9700 Fax (972) 238-5338
www.interfet.com
