DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
2N5550; 2N5551
NPN high-voltage transistors
Product specification
Supersedes data of 1999 Apr 23
2004 Oct 28
Philips Semiconductors
Product specification
NPN high-voltage transistors
FEATURES
•
Low current (max. 300 mA)
•
High voltage (max. 160 V).
APPLICATIONS
•
Switching and amplification in high voltage applications
such as telephony.
1
handbook, halfpage
2N5550; 2N5551
PINNING
PIN
1
2
3
collector
base
emitter
DESCRIPTION
DESCRIPTION
NPN high-voltage transistor in a TO-92; SOT54 plastic
package. PNP complements: 2N5400 and 2N5401.
2
3
1
2
3
MAM279
Fig.1
Simplified outline (TO-92; SOT54)
and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
2N5550
2N5551
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
2N5550
2N5551
V
CEO
collector-emitter voltage
2N5550
2N5551
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
T
amb
≤
25
°C
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
140
160
6
300
600
100
630
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
160
180
V
V
MIN.
MAX.
UNIT
SC-43A
DESCRIPTION
plastic single-ended leaded (through hole) package; 3 leads
VERSION
SOT54
2004 Oct 28
2
Philips Semiconductors
Product specification
NPN high-voltage transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
PARAMETER
thermal resistance from junction to ambient
2N5550; 2N5551
VALUE
200
UNIT
K/W
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
2N5550
collector-base cut-off current
2N5551
I
EBO
h
FE
emitter-base cut-off current
DC current gain
2N5550
2N5551
DC current gain
2N5550
2N5551
DC current gain
2N5550
2N5551
V
CEsat
collector-emitter saturation voltage
2N5550
2N5551
collector-emitter saturation voltage
2N5550
2N5551
V
BEsat
C
c
C
e
f
T
F
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
2N5550
2N5551
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
V
CB
= 10 V; I
E
= i
e
= 0 A; f = 1 MHz
V
EB
= 0.5 V; I
C
= i
c
= 0 A; f = 1 MHz
V
CE
= 10 V; I
C
= 10 mA; f = 100 MHz
V
CE
= 5 V; I
C
= 200
µA;
R
S
= 2 kΩ;
f = 10 Hz to 15.7 kHz
I
C
= 50 mA; I
B
= 5 mA
−
−
−
−
−
−
100
−
−
250
200
1
1
6
30
300
10
8
mV
mV
V
V
pF
pF
MHz
dB
dB
I
C
= 10 mA; I
B
= 1 mA
−
−
150
150
mV
mV
V
CE
= 5 V; I
C
= 50 mA; see Fig.2
20
30
−
−
V
CE
= 5 V; I
C
= 10 mA; see Fig.2
60
80
250
250
V
CB
= 120 V; I
E
= 0 A
V
CB
= 120 V; I
E
= 0 A; T
j
= 100
°C
V
EB
= 4 V; I
C
= 0 A
V
CE
= 5 V; I
C
= 1 mA; see Fig.2
60
80
−
−
−
−
−
50
50
50
nA
µA
nA
PARAMETER
collector-base cut-off current
V
CB
= 100 V; I
E
= 0 A
V
CB
= 100 V; I
E
= 0 A; T
j
= 100
°C
−
−
100
100
nA
µA
CONDITIONS
MIN.
MAX.
UNIT
2004 Oct 28
3
Philips Semiconductors
Product specification
NPN high-voltage transistors
2N5550; 2N5551
handbook, full pagewidth
160
MGD814
hFE
120
VCE = 5 V
80
40
0
10
−1
1
10
10
2
IC mA
10
3
Fig.2 DC current gain; typical values.
2004 Oct 28
4
Philips Semiconductors
Product specification
NPN high-voltage transistors
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
2N5550; 2N5551
SOT54
c
E
d
A
L
b
1
D
2
e1
e
3
b
1
L1
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
5.2
5.0
b
0.48
0.40
b1
0.66
0.55
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
e
2.54
e1
1.27
L
14.5
12.7
L
1(1)
max.
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT54
REFERENCES
IEC
JEDEC
TO-92
JEITA
SC-43A
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
04-06-28
2004 Oct 28
5
