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2N5667SE3

Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin, TO-39, 3 PIN

器件类别：分立半导体    晶体管   

厂商名称：Microsemi

厂商官网：https://www.microsemi.com

下载文档
参数 预览 参数对比
器件参数
参数名称
属性值
Objectid
8059220438
包装说明
TO-39, 3 PIN
Reach Compliance Code
compliant
ECCN代码
EAR99
最大集电极电流 (IC)
5 A
集电极-发射极最大电压
300 V
配置
SINGLE
最小直流电流增益 (hFE)
10
JEDEC-95代码
TO-205AD
JESD-30 代码
O-MBCY-W3
元件数量
1
端子数量
3
封装主体材料
METAL
封装形状
ROUND
封装形式
CYLINDRICAL
极性/信道类型
NPN
表面贴装
NO
端子形式
WIRE
端子位置
BOTTOM
晶体管元件材料
SILICON
文档预览
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455
DEVICES
LEVELS
2N5664
2N5665
2N5666
2N5666S
2N5666U3
2N5667
2N5667S
JAN
JANTX
JANTV
JANS
ABSOLUTE MAXIMUM RATINGS
(T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Symbol
V
CEO
V
CBO
V
EBO
I
B
I
C
2N5664
2N5665
Total
1/
Power Dissipation
@ T
A
= +25°C
@ T
C
= +100°C
P
T
T
J
, T
stg
2.5
30
2N5664
2N5666, S
200
250
6.0
1.0
5.0
2N5666, S
2N5667, S
1.2
15
-65 to +200
2N5666U3
1.5
35
W
°C
2N5665
2N5667, S
300
400
Unit
Vdc
Vdc
Vdc
Adc
Adc
TO-66 (TO-213AA)
2N5664, 2N5665
Operating & Storage Junction
Temperature Range
TO-5
2N5666, 2N5667
Note:
1) Consult 19500/455 for thermal derating curves.
ELECTRICAL CHARACTERISTICS
(T
C
= +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I
C
= 10mAdc
2N5664, 2N5666
2N5665, 2N5667
Emitter-Base Breakdown Voltage
I
E
= 10μAdc
Collector-Emitter Cutoff Current
V
CE
= 200Vdc
2N5664, 2N5666
V
CE
= 300Vdc
2N5665, 2N5667
Collector-Base Cutoff Current
V
CB
= 200Vdc
V
CB
= 250Vdc
V
CB
= 300Vdc
V
CB
= 400Vdc
2N5664, 2N5666
2N5665, 2N5667
I
CBO
V
(BR)CER
250
400
6.0
0.2
0.2
0.1
1.0
0.1
1.0
Vdc
Symbol
Min.
Max.
Unit
TO-39 (TO-205AD)
2N5666S, 2N5667S
V
(BR)EBO
Vdc
I
CES
μAdc
μAdc
mAdc
μAdc
mAdc
U-3
2N5666U3
T4-LDS-0062 Rev. 1 (081095)
Page 1 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455
ELECTRICAL CHARACTERISTICS (con’t)
Parameters / Test Conditions
ON CHARACTERTICS
Forward-Current Transfer Ratio
I
C
= 0.5Adc, V
CE
= 2.0Vdc
2N5664, 2N5666
2N5665, 2N5667
2N5664, 2N5666
2N5665, 2N5667
2N5664, 2N5666
2N5665, 2N5667
All Types
40
25
40
25
15
10
5.0
120
75
Symbol
Min.
Max.
Unit
I
C
= 1.0Adc, V
CE
= 5.0Vdc
h
FE
I
C
= 3.0Adc, V
CE
= 5.0Vdc
I
C
= 5.0Adc, V
CE
= 5.0Vdc
Collector-Emitter Saturation Voltage
I
C
= 3.0Adc, I
B
= 0.3Adc
I
C
= 3.0Adc, I
B
= 0.6Adc
I
C
= 5.0Adc, I
B
= 1.0Adc
Base-Emitter Saturation Voltage
I
C
= 3.0Adc, I
B
= 0.3Adc
I
C
= 3.0Adc, I
B
= 0.6Adc
I
C
= 5.0Adc, I
B
= 1.0Adc
2N5664, 2N5666
2N5665, 2N5667
All Types
V
CE(sat)
0.4
0.4
1.0
Vdc
2N5664, 2N5666
2N5665, 2N5667
All Types
V
BE(sat)
1.2
1.2
1.5
Vdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
I
C
= 0.5Adc, V
CE
= 5.0Vdc, f = 10MHz
Output Capacitance
V
CB
= 10Vdc, I
E
= 0, 100kHz
≤
f
≤
1.0MHz
C
obo
120
pF
|h
fe
|
2.0
7.0
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-On Time
V
CC
= 100Vdc; I
C
= 1.0Adc; I
B1
= 30mAdc
Turn-Off Time
V
CC
= 100Vdc; I
C
= 1.0Adc; I
B1
= -I
B2
= 50mAdc
2N5664, 2N5666
2N5665, 2N5667
t
off
1.5
2.0
μs
Symbol
t
on
Min.
Max.
0.25
Unit
μs
T4-LDS-0062 Rev. 1 (081095)
Page 2 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455
SAFE OPERATING AREA
DC Tests
T
C
= 100°C, 1 Cycle, t
≥
1.0s, t
r
+ t
f
= 10μs
Test 1
V
CE
= 6.0Vdc, I
C
= 5.0Adc
V
CE
= 3.0Vdc, I
C
= 5.0Adc
Test 2
V
CE
= 32Vdc, I
C
= 0.75Adc
V
CE
= 40Vdc, I
C
= 0.75Adc
V
CE
= 29Vdc, I
C
= 0.4Adc
V
CE
= 37.5Vdc, I
C
= 0.4Adc
Test 3
V
CE
= 200Vdc, I
C
= 29mAdc
V
CE
= 200Vdc, I
C
= 19mAdc
V
CE
= 300Vdc, I
C
= 21mAdc
V
CE
= 300Vdc, I
C
= 14mAdc
2N5664
2N5666
2N5665
2N5667
2N5664
2N5665
2N5666
2N5667
2N5664 , 2N5665
2N5666, 2N5667
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%
T4-LDS-0062 Rev. 1 (081095)
Page 3 of 3
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参数对比
与2N5667SE3相近的元器件有：JANTV2N5667S、JANTV2N5666U3、JANTV2N5665、JANTV2N5664、2N5665E3、2N5666SE3、JANTV2N5667、JANTV2N5666S。描述及对比如下：
型号 2N5667SE3 JANTV2N5667S JANTV2N5666U3 JANTV2N5665 JANTV2N5664 2N5665E3 2N5666SE3 JANTV2N5667 JANTV2N5666S
描述 Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin, TO-39, 3 PIN Power Bipolar Transistor, TO-205AD, Metal, 3 Pin, TO-39, 3 PIN Power Bipolar Transistor, Power Bipolar Transistor, TO-213AA, Metal, 2 Pin, TO-66, 2 PIN Power Bipolar Transistor, TO-213AA, Metal, 2 Pin, TO-66, 2 PIN Power Bipolar Transistor, 5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, TO-66, 2 PIN Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin, TO-39, 3 PIN Power Bipolar Transistor, TO-5, Metal, 3 Pin, TO-5, 3 PIN Power Bipolar Transistor, TO-205AD, Metal, 3 Pin, TO-39, 3 PIN
包装说明 TO-39, 3 PIN CYLINDRICAL, O-MBCY-W3 SMALL OUTLINE, R-XDSO-N3 FLANGE MOUNT, O-MBFM-P2 FLANGE MOUNT, O-MBFM-P2 TO-66, 2 PIN TO-39, 3 PIN CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Reach Compliance Code compliant compli compli compliant compliant compliant compliant compliant compliant
JESD-30 代码 O-MBCY-W3 O-MBCY-W3 R-XDSO-N3 O-MBFM-P2 O-MBFM-P2 O-MBFM-P2 O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
端子数量 3 3 3 2 2 2 3 3 3
封装主体材料 METAL METAL UNSPECIFIED METAL METAL METAL METAL METAL METAL
封装形状 ROUND ROUND RECTANGULAR ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 CYLINDRICAL CYLINDRICAL SMALL OUTLINE FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT CYLINDRICAL CYLINDRICAL CYLINDRICAL
表面贴装 NO NO YES NO NO NO NO NO NO
端子形式 WIRE WIRE NO LEAD PIN/PEG PIN/PEG PIN/PEG WIRE WIRE WIRE
端子位置 BOTTOM BOTTOM DUAL BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
JEDEC-95代码 TO-205AD TO-205AD - TO-213AA TO-213AA TO-213AA TO-205AD TO-5 TO-205AD
零件包装代码 - BCY - TO-66 TO-66 - - TO-5 BCY
针数 - 2 - 2 2 - - 3 2
最高工作温度 - 200 °C 200 °C 200 °C 200 °C - - 200 °C 200 °C
认证状态 - Not Qualified Not Qualified Not Qualified Not Qualified - - Not Qualified Not Qualified
厂商名称 - - - Microsemi Microsemi Microsemi Microsemi Microsemi -
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器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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