UNISONIC TECHNOLOGIES CO., LTD
2N60-CB
2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
Power MOSFET
The UTC
2N60-CB
is a high voltage power MOSFET
and is designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance
and have a high rugged avalanche characteristics. This
power MOSFET is usually used at high speed switching
applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* R
DS(ON)
< 4.6Ω @ V
GS
= 10V, I
D
= 1.0A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
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QW-R209-071.D
2N60-CB
ORDERING INFORMATION
1
G
G
G
G
G
G
G
G
G
G
G
G
G
S
2
D
D
D
D
D
D
D
D
D
D
D
D
D
S
Ordering Number
Package
Lead Free
Halogen Free
2N60L-T60-T
2N60G-T60-T
TO-126
2N60L-AA3-R
2N60G-AA3-R
SOT-223
2N60L-TA3-T
2N60G-TA3-T
TO-220
2N60L-TF3-T
2N60G-TF3-T
TO-220F
2N60L-TF1-T
2N60G-TF1-T
TO-220F1
2N60L-TF2-T
2N60G-TF2-T
TO-220F2
2N60L-TF3T-T
2N60G-TF3T-T
TO-220F3
2N60L-TM3-T
2N60G-TM3-T
TO-251
2N60L-TMS-T
2N60G-TMS-T
TO-251S
2N60L-TMS2-T
2N60G-TMS2-T
TO-251S2
2N60L-TMS4-T
2N60G-TMS4-T
TO-251S4
2N60L-TN3-R
2N60G-TN3-R
TO-252
2N60L-TND-R
2N60G-TND-R
TO-252D
2N60L-K08-5060-R
2N60G-K08-5060-R
DFN5060-8
Note: Pin Assignment: G: Gate
D: Drain
S: Source
2N60G-T60-T
Power MOSFET
Pin Assignment
3 4 5 6 7
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S -
-
-
-
S G D D D
8
-
-
-
-
-
-
-
-
-
-
-
-
-
D
Packing
Bulk
Tape Reel
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
Tape Reel
Tape Reel
(1)Packing Type
(2)Package Type
(3)Green Package
(1) T: Tube, R: Tape Reel
(2) T60: TO-126, AA3: SOT-223, TA3: TO-220,
TF3: TO-220F, TF1: TO-220F1, TF1: TO-220F2,
TF3T: TO-220F3, TM3: TO-251, TMS: TO-251S,
TMS2: TO-251S2, TMS4: TO-251S4,
TN3: TO-252, TND: TO-252D,
K08-5060: DFN5060-8
(3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
PACKAGE
TO-126
MARKING
SOT-223
TO-220 / TO-220F
TO-220F1 / TO-220F2
TO-220F3 / TO-251
TO-251S / TO-251S2
TO-251S4 / TO-252
TO-252D
DFN5060-8
UNISONIC TECHNOLOGIES CO., LTD
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2 of 7
QW-R209-071.D
2N60-CB
ABSOLUTE MAXIMUM RATINGS
(
T
C
=25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
2.0
A
Continuous
I
D
2.0
A
Drain Current
8.0
A
Pulsed (Note 2)
I
DM
Avalanche Energy
Single Pulsed (Note 3)
E
AS
72
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
2.72
V/ns
TO-126
40
W
SOT-223
44
W
TO-220
55
W
TO-220F/TO-220F1
24
W
TO-220F3
Power Dissipation
P
D
TO-220F2
25
W
TO-251/TO-251S
TO-251S2/TO-251S4
44
W
TO-252/TO-252D
DFN5060-8
22
W
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L=25mH, I
AS
=2.4A, V
DD
=50V, R
G
=25
Ω,
Starting T
J
= 25°C
4. I
SD
≤2A,
di/dt≤200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
SYMBOL
RATINGS
89
150
62.5
θ
JA
100
75
3.12
14
2.27
5.2
θ
JC
5.0
2.84
5.68
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
UNIT
°C/W
°C/W
°C/W
PARAMETER
TO-126
SOT-223
TO-220/TO-220F
TO-220F1/ TO-220F2
Junction to Ambient
TO-220F3
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
DFN5060-8
TO-126
SOT-223
TO-220
TO-220F/TO-220F1
TO-220F3
Junction to Case
TO-220F2
TO-251/TO-251S
TO-251S2/TO-251S4
TO-252/TO-252D
DFN5060-8
UNISONIC TECHNOLOGIES CO., LTD
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QW-R209-071.D
2N60-CB
ELECTRICAL CHARACTERISTICS
(T
C
=25°С, unless otherwise specified)
SYMBOL
BV
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Power MOSFET
MIN TYP MAX UNIT
V
10
μA
100
μA
100 nA
-100 nA
V/°С
4.0
4.6
300
36
5
19
2.3
2.4
37
24
90
29
2
8
1.4
315
0.75
V
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
V
GS
= 0V, I
D
= 250μA
600
V
DS
= 600V, V
GS
= 0V
Drain-Source Leakage Current
I
DSS
V
DS
= 480V, T
C
=125°С
Forward
V
GS
= 30V, V
DS
= 0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30V, V
DS
= 0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/
△
T
J
I
D
=250μA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
=1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f =1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Total Gate Charge
Q
G
V
DS
=50V, V
GS
=10V,
Gate-Source Charge
Q
GS
I
D
=1.3A, I
D
=100μA (Note 1, 2)
Gate-Drain Charge
Q
GD
Turn-On Delay Time
t
D (ON)
V
DD
=30V, V
GS
=10V, I
D
=0.5A,
Turn-On Rise Time
t
R
R
G
=25Ω (Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
DRAIN-SOURCE DIODE CHARACTERISTICS
Continuous Drain-Source Current
I
SD
Pulsed Drain-Source Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
SD
=2.0 A, V
GS
=0 V
Reverse Recovery Time
t
rr
I
S
=2.0A, V
GS
=0 V
dI
F
/dt=100A/µs (Note1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
0.4
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QW-R209-071.D
2N60-CB
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R209-071.D
