UNISONIC TECHNOLOGIES CO., LTD
2N60L
2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
2N60L
is a high voltage MOSFET and is
designed to have better characteristics, such as fast
switching time, low gate charge, low on-state
resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC
converters and bridge circuits.
Power MOSFET
FEATURES
* R
DS(ON)
< 5Ω @ V
GS
= 10V, I
D
=1A
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
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QW-R502-472.M
2N60L
ORDERING INFORMATION
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-220F3
TO-251
TO-251L
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
TO-262
TO-126
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Ordering Number
Lead Free
Halogen Free
2N60LL-TA3-T
2N60LG-TA3-T
2N60LL-TF1-T
2N60LG-TF1-T
2N60LL-TF2-T
2N60LG-TF2-T
2N60LL-TF3-T
2N60LG-TF3-T
2N60LL-TF3T-T
2N60LG-TF3T-T
2N60LL-TM3-T
2N60LG-TM3-T
2N60LL-TMA-T
2N60LG-TMA-T
2N60LL-TMS-T
2N60LG-TMS-T
2N60LL-TMS2-T
2N60LG-TMS2-T
2N60LL-TMS4-T
2N60LG-TMS4-T
2N60LL-TN3-R
2N60LG-TN3-R
2N60LL-TND-R
2N60LG-TND-R
2N60LL-T2Q-T
2N60LG-T2Q-T
2N60LL -T60-K
2N60LG-T60-K
Note: Pin Assignment: G: Gate
D: Drain
S: Source
Power MOSFET
Packing
Tube
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Tape Reel
Tape Reel
Tube
Bulk
MARKING
PACKAGE
TO-220
TO-220F
TO-220F1
TO-220F2
TO-220F3
TO-251
TO-251L
TO-126
TO-251S
TO-251S2
TO-251S4
TO-252
TO-252D
TO-262
MARKING
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QW-R502-472.M
2N60L
ABSOLUTE MAXIMUM RATINGS
(
T
C
= 25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
2.0
A
2.0
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
8.0
A
140
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
4.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/TO-262
54
W
TO-220F/TO-220F1
23
W
TO-220F3
TO-220F2
25
W
Power Dissipation
P
D
TO-251/TO-251L
TO-251S/TO-251S2
44
W
TO-251S4/TO-252
TO-252D
TO-126
12.5
W
Junction Temperature
T
J
+150
°С
Ambient Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L=64mH, I
AS
=2.0A, V
DD
=50V, R
G
=25
Ω,
Starting T
J
= 25°C
4. I
SD
≤2.4A,
di/dt≤200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
PACKAGE
TO-220/TO-220F
TO-220F1/TO-220F2
TO-220F3/TO-262
TO-251/TO-251L
TO-251S/TO-251S2
TO-251S4/TO-252
TO-252D
TO-126
TO-220/TO-262
TO-220F/TO-220F1
TO-220F3
TO-220F2
TO-251/TO-251L
TO-251S/TO-251S2
TO-251S4/TO-252
TO-252D
TO-126
SYMBOL
RATINGS
62.5
θ
JA
100
132
2.32
5.5
5
θ
JC
2.87
10
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
UNIT
°С/W
Junction to Ambient
Junction to Case
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QW-R502-472.M
2N60L
ELECTRICAL CHARACTERISTICS
(T
J
=25°С, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Power MOSFET
MIN TYP MAX UNIT
600
V
10
μA
100 nA
-100 nA
0.4
V/°С
4.0
5.0
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
V
GS
= 0V, I
D
= 250μA
V
DS
= 600V, V
GS
= 0V
Forward
V
GS
= 30V, V
DS
= 0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -30V, V
DS
= 0V
Breakdown Voltage Temperature Coefficient
△
BV
DSS
/
△
T
J
I
D
=250μA, Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
=1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V,
Output Capacitance
C
OSS
f =1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D (ON)
Turn-On Rise Time
t
R
V
DD
=300V, I
D
=2.4A, R
G
=25Ω
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
Turn-Off Fall Time
t
F
Total Gate Charge
Q
G
V
DS
=480V, V
GS
=10V, I
D
=2.4A
Gate-Source Charge
Q
GS
(Note 1, 2)
Gate-Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
SD
= 2.0 A
Continuous Drain-Source Current
I
SD
Pulsed Drain-Source Current
I
SM
Reverse Recovery Time
t
RR
V
GS
= 0 V, I
SD
= 2.4A,
di/dt = 100 A/μs (Note1)
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width
≤
300μs, Duty cycle≤2%.
2. Essentially independent of operating temperature.
2.0
4.2
300 350
30 50
7
10
30
25
70
30
30
8
10
60
60
90
60
40
1.4
2.0
8.0
180
0.72
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QW-R502-472.M
2N60L
TEST CIRCUITS AND WAVEFORMS
+
V
DS
-
+
-
L
Power MOSFET
D.U.T.
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
Period
P.W.
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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QW-R502-472.M
