2N6107 2N6109 2N6111
2N6288 2N6290 2N6292
PNP
NPN
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COMPLEMENTARY
SILICON POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6107, 2N6288
series types are complementary silicon power transistors,
manufactured by the epitaxial base process, designed
for general purpose power amplifier and switching
applications.
MARKING: FULL PART NUMBER
TO-220 CASE
MAXIMUM RATINGS:
(TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
2N6111 2N6109 2N6107
SYMBOL 2N6288 2N6290 2N6292
VCBO
40
60
80
VCEO
30
50
70
VEBO
5.0
IC
7.0
ICM
10
IB
3.0
PD
40
TJ, Tstg
-65 to +150
Θ
JC
3.13
MAX
100
2.0
1.0
1.0
1.0
1.0
30
50
70
3.5
3.0
30
30
30
2.3
20
4.0
250
150
150
150
UNITS
V
V
V
A
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEV
VCE=Rated VCEO, VEB=1.5V
ICEV
ICEO
ICEO
ICEO
IEBO
BVCEO
BVCEO
BVCEO
VCE(SAT)
VBE(ON)
hFE
hFE
hFE
hFE
hfe
fT
Cob
VCE=Rated VCEO, VEB=1.5V, TC=150°C
VCE=20V (2N6111, 2N6288)
VCE=40V (2N6109, 2N6290)
VCE=60V (2N6107, 2N6292)
VEB=5.0V
IC=100mA (2N6111, 2N6288)
IC=100mA (2N6109, 2N6290)
IC=100mA (2N6107, 2N6292)
IC=7.0A, IB=3.0A
VCE=4.0V, IC=7.0A
VCE=4.0V, IC=2.0A (2N6107, 2N6292)
VCE=4.0V, IC=2.5A (2N6109, 2N6290)
VCE=4.0V, IC=3.0A (2N6111, 2N6288)
VCE=4.0V, IC=7.0A
VCE=4.0V, IC=0.5A, f=50kHz
VCE=4.0V, IC=0.5A, f=1.0MHz
VCB=10V, IE=0, f=1.0MHz
UNITS
μA
mA
mA
mA
mA
mA
V
V
V
V
V
MHz
pF
R1 (10-April 2013)
2N6107 2N6109 2N6111
2N6288 2N6290 2N6292
PNP
NPN
COMPLEMENTARY
SILICON POWER TRANSISTORS
TO-220 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
Tab) Collector
MARKING:
FULL PART NUMBER
R1 (10-April 2013)
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REQUESTING PRODUCT PLATING
1.
2.
If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
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