TECHNICAL DATA
PNP MEDIUM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/561
Devices
2N6193
Qualified Level
JAN, JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
T
T
op
,
T
stg
Symbol
R
θ
JC
2N6193
100
100
6.0
5.0
1.0
1.0
10
-65 to +200
Max.
17.5
Units
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
Unit
C/W
@ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 5.71mW/
0
C for T
A
> +25
0
C
2) Derate linearly 57.1mW/
0
C for T
C
> +25
0
C
0
TO-39*
(TO-205AD)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
V
CEO(sus)
I
CEO
I
EBO
I
CEX
I
CBO
Min.
100
100
100
10
10
Max.
Unit
Vdc
µAdc
µAdc
µAdc
µAdc
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
I
C
= 50 mAdc
Collector-Emitter Cutoff Current
V
CE
= 100 Vdc
Emitter-Base Cutoff Current
V
EB
= 6.0 Vdc
Collector-Emitter Cutoff Current
V
CE
= 90 Vdc, V
BE
= 1.5 Vdc
Collector-Base Cutoff Current
V
CB
= 100 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N6193 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
DC Current Gain
I
C
= 0.5 Adc, V
CE
= 2.0 Vdc
I
C
= 2.0 Adc, V
CE
= 2.0 Vdc
I
C
= 5.0 Adc, V
CE
= 2.0 Vdc
Collector-Emitter Saturation Voltage
I
C
= 2.0 Adc, I
B
= 0.2 Adc
I
C
= 5.0 Adc, I
B
= 0.5 Adc
Base-Emitter Saturation Voltage
I
C
= 2.0 Adc, I
B
= 0.2 Adc
I
C
= 5.0 Adc, I
B
= 0.5 Adc
h
FE
60
60
40
240
V
CE(sat)
0.7
1.2
1.2
1.8
Vdc
V
BE(sat)
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit
Forward-Current Transfer Ratio
I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 10 MHz
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
Output Capacitance
V
BE
= 2.0 Vdc, I
C
= 0, 100 kHz
≤
f
≤
1.0 MHz
h
fe
C
obo
C
ibo
t
3.0
15
300
1250
100
100
2.0
200
pF
pF
ηs
ηs
µs
ηs
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
V
CC
= -40 Vdc, V
BE(off)
=
3.0 Vdc
I
C
= 2.0 Adc, I
B1
=
0.2 Adc
V
CC
= -40 Vdc I
C
= 2.0 Adc,
I
B1
= -
I
B2
=
0.2 Adc
d
r
t
s
t
f
t
SAFE OPERATING AREA
DC Tests
T
C
= +25
0
C, 1 Cycle, t
≥
0.5 s
Test 1
V
CE
= 2.0 Vdc, I
C
= 5.0 Adc
Test 2
V
CE
= 90 Vdc, I
C
= 55 mAdc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
