2N6284 (NPN); 2N6286,
2N6287 (PNP)
Preferred Device
Darlington Complementary
Silicon Power Transistors
These packages are designed for general−purpose amplifier and
low−frequency switching applications.
Features
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•
High DC Current Gain @ I
C
= 10 Adc
−
h
FE
= 2400 (Typ)
−
2N6284
= 4000 (Typ)
−
2N6287
•
Collector−Emitter Sustaining Voltage
−
V
CEO(sus)
= 100 Vdc (Min)
•
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
•
Pb−Free Packages are Available*
MAXIMUM RATINGS
(Note 1)
Rating
Collector−Emitter Voltage
2N6286
2N6284/87
2N6286
2N6284/87
Symbol
V
CEO
Value
80
100
80
100
5.0
20
40
0.5
160
0.915
−65
to + 200
Unit
Vdc
20 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
100 VOLTS, 160 WATTS
COLLECTOR
CASE
BASE
1
EMITTER 2
MARKING DIAGRAM
Vdc
1
2N628xG
AYYWW
MEX
Collector−Base Voltage
V
CB
Emitter−Base Voltage
Collector Current
−
Continuous
Peak
Base Current
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Temperature
Range
V
EB
I
C
I
B
P
D
T
J
, T
stg
Vdc
Adc
Adc
W
W/°C
°C
2
TO−204AA (TO−3)
CASE 1−07
STYLE 1
2N628x
G
A
YY
WW
MEX
THERMAL CHARACTERISTICS
(Note 1)
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
1.09
Unit
°C/W
= Device Code
x = 4, 6 or 7
= Pb−Free Package
= Location Code
= Year
= Work Week
= Country of Orgin
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
ORDERING INFORMATION
Device
2N6284
2N6284G
2N6286
2N6286G
2N6287
Package
TO−3
TO−3
(Pb−Free)
TO−3
TO−3
(Pb−Free)
TO−3
TO−3
(Pb−Free)
Shipping
100 Units/Tray
100 Units/Tray
100 Units/Tray
100 Units/Tray
100 Units/Tray
100 Units/Tray
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2008
2N6287G
September, 2008
−
Rev. 4
1
Publication Order Number:
2N6284/D
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2. Indicates JEDEC Registered Data.
3. Pulse test: Pulse Width = 300
ms,
Duty Cycle = 2%
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS
(Note 3)
OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted) (Note 2)
Small−Signal Current Gain
(I
C
= 10 Adc, V
CE
= 3.0 Vdc, f = 1.0 kHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
Magnitude of Common Emitter Small−Signal Short−Circuit
Forward Current Transfer Ratio
(I
C
= 10 Adc, V
CE
= 3.0 Vdc, f = 1.0 MHz)
Base−Emitter Saturation Voltage
(I
C
= 20 Adc, I
B
= 200 mAdc)
Base−Emitter On Voltage
(I
C
= 10 Adc, V
CE
= 3.0 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 10 Adc, I
B
= 40 mAdc)
(I
C
= 20 Adc, I
B
= 200 mAdc)
DC Current Gain
(I
C
= 10 Adc, V
CE
= 3.0 Vdc)
(I
C
= 20 Adc, V
CE
= 3.0 Vdc)
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
Collector Cutoff Current
(V
CE
= Rated V
CB
, V
BE(off)
= 1.5 Vdc)
(V
CE
= Rated V
CB
, V
BE(off)
= 1.5 Vdc, T
C
= 150_C)
Collector Cutoff Current
(V
CE
= 40 Vdc, I
B
= 0)
(V
CE
= 50 Vdc, I
B
= 0)
Collector−Emitter Sustaining Voltage
(I
C
= 0.1 Adc, I
B
= 0)
Characteristic
PD, POWER DISSIPATION (WATTS)
100
120
140
160
20
40
60
80
2N6284 (NPN); 2N6286, 2N6287 (PNP)
0
0
25
Figure 1. Power Derating
75
150
50
100
125
T
C
, CASE TEMPERATURE (°C)
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2N6286
2N6284, 2N6287
2N6284
2N6286, 2N6287
V
CEO(sus)
175
Symbol
V
CE(sat)
V
BE(sat)
V
BE(on)
I
CEO
I
EBO
I
CEX
|h
fe
|
C
ob
h
FE
h
fe
200
Min
300
750
100
100
4.0
2
80
−
−
−
−
−
−
−
−
−
−
−
18,000
−
Max
400
600
4.0
2.8
2.0
3.0
2.0
0.5
5.0
1.0
1.0
−
−
−
−
mAdc
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
pF
−
−
2N6284 (NPN); 2N6286, 2N6287 (PNP)
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE e.g.,
1N5825 USED ABOVE I
B
[
100 mA
MSD6100 USED BELOW I
B
[
100 mA
V
2
APPROX
V
CC
- 30 V
R
C
TUT
SCOPE
R
B
51
D
1
[
8.0 k
[
50
+ 8.0 V
0
V
1
APPROX
- 12 V
25
ms
t
r
, t
f
v
10 ns
DUTY CYCLE = 1.0%
+ 4.0 V
FOR t
d
AND t
r
, D
1
IS DISCONNECTED
AND V
2
= 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES
Figure 2. Switching Times Test Circuit
10
7.0
5.0
3.0
t, TIME (
μ
s)
2.0
t
s
2N6284 (NPN)
2N6287 (PNP)
t
f
1.0
0.7
0.5
t
r
0.3 V
CC
= 30 Vdc
I /I = 250
0.2
C B
I
B1
= I
B2
t
d
@ V
BE(off)
= 0 V
T = 25°C
0.1
J
0.5 0.7 1.0
2.0 3.0
0.2 0.3
5.0 7.0 10
I
C
, COLLECTOR CURRENT (AMP)
20
Figure 3. Switching Times
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
R
qJC
(t) = r(t) R
qJC
R
qJC
= 1.09°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
qJC
(t)
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
20
30
50
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
100
200 300
500
1000
0.01
0.01
0.02 0.03
0.05
0.1
Figure 4. Thermal Response
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3
2N6284 (NPN); 2N6286, 2N6287 (PNP)
ACTIVE−REGION SAFE OPERATING AREA
50
0.1 ms
IC, COLLECTOR CURRENT (AMP)
20
10
5.0
5.0 ms
2.0
1.0
0.5
0.2
0.1
0.05
2.0
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ T
C
= 25°C
SINGLE PULSE
0.5 ms
1.0 ms
dc
T
J
= 200°C
5.0
10
20
50
100
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
−
V
CE
limits of the transistor that must be observed for reliable
operation; i.e. the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 200_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
T
J(pk)
< 200_C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. 2N6284, 2N6287
10,000
hFE, SMALL-SIGNAL CURRENT GAIN
5000
2000
1000
500
200
100
50
20
10
1.0
2.0
2N6284 (NPN)
2N6287 (PNP)
5.0 10
20
50 100
f, FREQUENCY (kHz)
200
500 1000
T
J
= 25°C
V
CE
= 3.0 Vdc
I
C
= 10 A
Figure 6. Small−Signal Current Gain
1000
T
J
= 25°C
700
C, CAPACITANCE (PF)
500
C
ib
C
ob
2N6284 (NPN)
2N6287 (PNP)
100
0.1 0.2
0.5
1.0 2.0
5.0
10
20
V
R
, REVERSE VOLTAGE (VOLTS)
50
100
300
200
Figure 7. Capacitance
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4
2N6284 (NPN); 2N6286, 2N6287 (PNP)
NPN
2N6284
20,000
V
CE
= 3.0 V
10,000
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
7000
5000
3000
2000
1000
700
500
300
200
T
J
= 150°C
10,000
7000
5000
25°C
3000
2000
1000
700
500
300
0.2 0.3
- 55°C
30,000
20,000
PNP
2N6287
V
CE
= 3.0 V
T
J
= 150°C
25°C
- 55°C
0.2 0.3
5.0 7.0 10
0.5 0.7 1.0
2.0 3.0
I
C
, COLLECTOR CURRENT (AMP)
20
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I
C
, COLLECTOR CURRENT (AMP)
20
Figure 8. DC Current Gain
VCE , COLLECTOR‐EMITTER VOLTAGE (VOLTS)
3.0
T
J
= 25°C
2.6
I
C
= 5.0 A
10 A
15 A
VCE , COLLECTOR‐EMITTER VOLTAGE (VOLTS)
3.0
T
J
= 25°C
2.6
I
C
= 5.0 A
2.2
10 A
15 A
2.2
1.8
1.8
1.4
1.4
1.0
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I
B
, BASE CURRENT (mA)
20
30
50
1.0
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
I
B
, BASE CURRENT (mA)
20
30
50
Figure 9. Collector Saturation Region
3.0
T
J
= 25°C
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.5
3.0
T
J
= 25°C
2.5
2.0
V
BE(sat)
@ I
C
/I
B
= 250
2.0
1.5
1.5
V
BE(sat)
@ I
C
/I
B
= 250
V
BE
@ V
CE
= 3.0 V
V
CE(sat)
@ I
C
/I
B
= 250
1.0
V
BE
@ V
CE
= 3.0 V
V
CE(sat)
@ I
C
/I
B
= 250
1.0
0.5
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
0.5
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
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5
