TECHNICAL DATA
NPN DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/523
Devices
2N6383
2N6384
2N6385
Qualified Level
JAN, JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Symbol 2N6383 2N6384 2N6385 Unit
V
CEO
V
CBO
V
EBO
I
B
I
C
P
T
T
op
,
T
stg
40
40
60
60
5.0
0.25
10
6.0
100
-55 to +175
Max.
1.75
80
80
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
Unit
C/W
@ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
Operating & Storage Temperature
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance Junction-to-Case
R
θ
JC
0
0
1) Derate linearly 34.2 mW/ C above T
A
> +25 C
2)
Derate linearly 571 mW/
0
C above T
C
> +25
0
C
TO-3* (TO-204AA)
0
*See Appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= +25
0
C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc
2N6383
2N6384
2N6385
2N6383
2N6384
2N6385
2N6383
2N6384
2N6385
40
60
80
40
60
80
1.0
1.0
1.0
Vdc
V
(BR)
CEO
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc, R
BB
= 100
Ω
V
(BR)
CER
Vdc
Collector-Base Cutoff Current
V
CE
= 40 Vdc
V
CE
= 60 Vdc
V
CE
= 80 Vdc
I
CBO
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N6383, 2N6384, 2N6385, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
Collector-Emitter Cutoff Current
V
CE
= 40 Vdc
V
CE
= 60 Vdc
V
CE
= 80 Vdc
Collector-Emitter Cutoff Current
V
CE
= 40 Vdc, V
BE
= 1.5 Vdc
V
CE
= 60 Vdc, V
BE
= 1.5 Vdc
V
CE
= 80 Vdc, V
BE
= 1.5 Vdc
Symbol
I
EBO
2N6383
2N6384
2N6385
2N6383
2N6384
2N6385
Min.
Max.
5.0
1.0
1.0
1.0
0.3
0.3
0.3
Unit
mAdc
I
CEO
mAdc
I
CEX
mAdc
ON CHARACTERISTICS
(3)
Forward-Current Transfer Ratio
I
C
= 5.0 Adc, V
CE
= 3.0 Vdc
I
C
= 10 Adc, V
CE
= 3.0 Vdc
Collector-Emitter Saturation Voltage
I
C
= 5.0 Adc, I
B
= 10 mAdc
I
C
= 10 Adc, I
B
= 0.1 Adc
Base-Emitter Voltage
I
C
= 5.0 Adc, V
CE
= 3.0 Vdc
I
C
= 10 Adc, V
CE
= 3.0 Vdc
h
FE
1,000
100
20,000
V
CE(sat)
2.0
3.0
2.8
4.5
Vdc
V
BE(on)
Vdc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0 Adc, V
CE
= 5.0 Vdc, f = 1.0 MHz
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
h
fe
C
obo
20
300
200
pF
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 30 Vdc; I
C
= 5.0 Adc; I
B1
= 20 mAdc
Turn-Off Time
V
CC
= 30 Vdc; I
C
= 5.0 Adc; I
B1
= -I
B2
= 20 mAdc
t
on
2.5
10
µs
µs
t
off
SAFE OPERATING AREA
DC Tests
T
C
= +25
0
C, 1 Cycle, t = 1.0 s
Test 1
V
CE
= 10 Vdc, I
C
= 10 Adc
All Types
Test 2
V
CE
= 30 Vdc, I
C
= 3.33 Adc
All Types
Test 3
V
CE
= 40
Vdc
, I
C
= 1.5
Adc
2N6383
V
CE
= 60 Vdc, I
C
= 0.4 Adc
2N6384
V
CE
= 80 Vdc, I
C
= 0.16 Adc
2N6385
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
