2N6544
2N6545
NPN SILICON
POWER TRANSISTOR
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6544, 2N6545
types are Silicon NPN Triple Diffused Mesa Transistors
designed for high voltage, high current, high speed
switching applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS:
(TC=25°C)
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Emitter Current
Peak Emitter Current
Continuous Base Current
Peak Base Current
Power Dissipation
Power Dissipation, TC=100°C
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCEV
VCEX
VCEO
VEBO
IC
ICM
IE
IEM
IB
IBM
PD
PD
TJ, Tstg
Θ
JC
2N6544
650
350
300
2N6545
850
450
400
UNITS
V
V
V
V
A
A
A
A
A
A
W
W
°C
°C/W
9.0
8.0
16
16
32
8.0
16
125
71.5
-65 to +200
1.4
ELECTRICAL CHARACTERISTICS:
(TC=25°C unless otherwise noted)
2N6544
SYMBOL
TEST CONDITIONS
MIN MAX
ICEV
VCE=Rated VCEV, VBE=1.5V
-
0.5
ICEV
VCE=Rated VCEV, VBE=1.5V, TC=100°C
-
2.5
ICER
VCE=Rated VCEV, RBE=50Ω, TC=100°C
-
3.0
IEBO
VEB=9.0V
-
1.0
BVCEX
VCL=Rated VCEX, IC=4.5A, TC=100°C
350
-
BVCEX
VCL=Rated VCEO-100V, IC=8.0A, TC=100°C
200
-
BVCEO
IC=100mA
300
-
VCE(SAT) IC=5.0A, IB=1.0A
-
1.5
VCE(SAT) IC=8.0A, IB=2.0A
-
5.0
VCE(SAT) IC=5.0A, IB=1.0A, TC=100°C
-
2.5
VBE(SAT) IC=5.0A, IB=1.0A
-
1.6
VBE(SAT) IC=5.0A, IB=1.0A, TC=100°C
-
1.6
hFE
VCE=3.0V, IC=2.5A
12
60
hFE
VCE=3.0V, IC=5.0A
7.0
35
2N6545
MIN MAX
-
0.5
-
2.5
-
3.0
-
1.0
450
-
300
-
400
-
-
1.5
-
5.0
-
2.5
-
1.6
-
1.6
12
60
7.0
35
UNITS
mA
mA
mA
mA
V
V
V
V
V
V
V
V
R1 (7-February 2011)
2N6544
2N6545
NPN SILICON
POWER TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued:
(TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
ft
VCE=10V, IC=300mA, f=1.0MHz
6.0
28
Cob
VCB=10V, IE=0, f=1.0MHz
75
300
Is/b
VCE=100V, t=1.0s
0.2
Resistive Load
td
VCC=250V, IC=5.0A,
tr
IB1=IB2=1.0A, tp=100μs,
ts
Duty Cycle≤2.0%
tf
Inductive Load (Clamped)
ts
VCL=Rated VCEX, IC=5.0A,
tf
IB1=1.0A, VBE=5.0V, TC=100°C
ts
tf
VCL=Rated VCEX, IC=5.0A,
IB1=1.0A, VBE=5.0V, TC=25°C
1.2
0.18
0.05
1.0
4.0
1.0
UNITS
MHz
pF
A
μs
μs
μs
μs
4.0
0.9
μs
μs
μs
μs
TO-3 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
Case) Collector
MARKING:
FULL PART NUMBER
R1 (7-February 2011)
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OUTSTANDING SUPPORT AND SUPERIOR SERVICES
PRODUCT SUPPORT
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• Free quick ship samples (2
nd
day air)
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• Customer specific screening
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• Up-screening capabilities
REQUESTING PRODUCT PLATING
1.
2.
If requesting Tin/Lead plated devices, add the suffix “ TIN/LEAD” to the part number when
ordering (example: 2N2222A TIN/LEAD).
If requesting Lead (Pb) Free plated devices, add the suffix “ PBFREE” to the part number
when ordering (example: 2N2222A PBFREE).
CONTACT US
Corporate Headquarters & Customer Support Team
Central Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Main Tel: (631) 435-1110
Main Fax: (631) 435-1824
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