首页 > 器件类别 >

2N6673

Silicon NPN Power Transistors

厂商名称:ISC

厂商官网:http://www.iscsemi.cn/

下载文档
2N6673 在线购买

供应商:

器件:2N6673

价格:-

最低购买:-

库存:点击查看

点击购买

文档预览
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・Low
saturation voltage
・Fast
switching speed
・High
voltage ratings
APPLICATIONS
・Off-line
power supplies
・High-voltage
inverters
・Switching
regulators
PINNING
PIN
1
2
3
Base
Emitter
DESCRIPTION
2N6671 2N6672 2N6673
Fig.1 simplified outline (TO-3) and symbol
Collector
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
固电
IN
导½
2N6671
2N6672
2N6673
CONDITIONS
V
CBO
Collector-base voltage
ANG
CH
MIC
E SE
Open emitter
Open base
OR
UCT
ND
O
VALUE
450
550
650
300
350
400
UNIT
V
2N6671
2N6672
V
CEO
Collector-emitter voltage
V
2N6673
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
8
8
10
4
150
200
-65~200
V
A
A
A
W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N6671
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N6672
2N6673
V
CEsat-1
V
CEsat-2
V
BEsat
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
2N6671
I
CEV
Collector cut-off current
2N6672
I
C
=5A; I
B
=1A
I
C
=8A ;I
B
=4A
I
C
=5A; I
B
=1A
I
C
=0.2A ;I
B
=0
CONDITIONS
2N6671 2N6672 2N6673
MIN
300
350
400
TYP.
MAX
UNIT
V
1.0
2.0
1.6
V
V
V
V
CE
=450V; V
BE(off)
=-1.5V
V
CE
=550V; V
BE(off)
=-1.5V
V
CE
=650V; V
BE(off)
=-1.5V
V
EB
=8V; I
C
=0
0.1
mA
I
EBO
h
FE
C
OB
f
T
电半
导½
2N6673
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
HA
INC
ES
NG
I
C
=5A ; V
CE
=3V
I
E
=0 ; V
CB
=10V;f=0.1MHz
15
MIC
E
OR
UCT
ND
O
2.0
40
10
300
60
mA
pF
MHz
I
C
=0.2A ; V
CE
=10V
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.17
UNIT
℃/W
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N6671 2N6672 2N6673
固电
IN
导½
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
查看更多>
参数对比
与2N6673相近的元器件有:2N6672、2N6671。描述及对比如下:
型号 2N6673 2N6672 2N6671
描述 Silicon NPN Power Transistors Silicon NPN Power Transistors Silicon NPN Power Transistors
热门器件
热门资源推荐
器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
需要登录后才可以下载。
登录取消