Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-18,
厂商名称:CDIL[Continental Device India Pvt. Ltd.]
下载文档型号 | 2N708 | 2N834 | 2N3117 | 2N720A | 2N2586 | 2N6430 | 2N3647 | 2N718 | 2N911 | 2N720 |
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描述 | Small Signal Bipolar Transistor, 15V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, | Small Signal Bipolar Transistor, 0.2A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-18 | Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, | Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, | Small Signal Bipolar Transistor, 0.03A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18 | Small Signal Bipolar Transistor, 0.05A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, | Small Signal Bipolar Transistor, 0.5A I(C), 10V V(BR)CEO, 1-Element, NPN, Silicon, TO-18 | Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-18 | Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18 | Small Signal Bipolar Transistor, 0.4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-18 |
是否Rohs认证 | 不符合 | 不符合 | 不符合 | 符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 符合 |
包装说明 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code | compli | compli | compli | compli | compli | compli | compli | compliant | compliant | compli |
集电极-发射极最大电压 | 15 V | 20 V | 60 V | 80 V | 45 V | 200 V | 10 V | 30 V | 60 V | 80 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 30 | 25 | 400 | 40 | 80 | 50 | 25 | 40 | 15 | 40 |
JEDEC-95代码 | TO-18 | TO-18 | TO-18 | TO-18 | TO-18 | TO-18 | TO-18 | TO-18 | TO-18 | TO-18 |
JESD-30 代码 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
最高工作温度 | 200 °C | 175 °C | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C | 175 °C | 200 °C | 175 °C |
封装主体材料 | METAL | METAL | METAL | METAL | METAL | METAL | METAL | METAL | METAL | METAL |
封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
极性/信道类型 | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
最大功率耗散 (Abs) | 0.36 W | 0.3 W | 0.36 W | 0.5 W | 0.3 W | 0.5 W | 2 W | 0.4 W | 0.5 W | 0.4 W |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO | NO | NO |
端子形式 | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 300 MHz | 350 MHz | 60 MHz | 50 MHz | 45 MHz | 50 MHz | 350 MHz | 50 MHz | 50 MHz | 50 MHz |
基于收集器的最大容量 | 6 pF | 4 pF | 4.5 pF | 15 pF | 2 pF | 4 pF | - | 35 pF | - | 20 pF |
JESD-609代码 | e0 | e0 | e0 | - | e0 | e0 | e0 | e0 | e0 | - |
端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - |
VCEsat-Max | 0.4 V | 0.4 V | 0.35 V | 5 V | 0.5 V | 0.5 V | - | 1.5 V | 1.2 V | 5 V |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | - | - |
ECCN代码 | - | EAR99 | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最大集电极电流 (IC) | - | 0.2 A | 0.05 A | - | 0.03 A | 0.05 A | 0.5 A | 0.5 A | 0.5 A | 0.4 A |