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2PA1576Q

PNP general-purpose transistor

器件类别:分立半导体    晶体管   

厂商名称:NXP(恩智浦)

厂商官网:https://www.nxp.com

器件标准:

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
零件包装代码
SC-70
包装说明
SMALL OUTLINE, R-PDSO-G3
针数
3
Reach Compliance Code
compli
ECCN代码
EAR99
最大集电极电流 (IC)
0.15 A
基于收集器的最大容量
3.5 pF
集电极-发射极最大电压
50 V
配置
SINGLE
最小直流电流增益 (hFE)
120
JESD-30 代码
R-PDSO-G3
JESD-609代码
e3
湿度敏感等级
1
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性/信道类型
PNP
最大功率耗散 (Abs)
0.2 W
认证状态
Not Qualified
表面贴装
YES
端子面层
Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
30
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
100 MHz
VCEsat-Max
0.5 V
Base Number Matches
1
文档预览
2PA1576
PNP general-purpose transistor
Rev. 06 — 17 November 2009
Product data sheet
1. Product profile
1.1 General description
PNP transistor in a SOT323 (SC-70) plastic package. The NPN complement is 2PC4081.
1.2 Features
Low current (max. 150 mA)
Low voltage (max. 50 V)
Low collector capacitance (typ. 2.5 pF)
1.3 Applications
General-purpose switching and amplification
2. Pinning information
Table 1.
Pin
1
2
3
Pinning
Description
base
emitter
collector
1
2
3
1
2
sym013
Simplified outline
Symbol
3
3. Ordering information
Table 2.
Ordering information
Package
Name
2PA1576Q
2PA1576R
2PA1576S
SC-70
Description
plastic surface mounted package; 3 leads
Version
SOT323
Type number
NXP Semiconductors
2PA1576
PNP general-purpose transistor
4. Marking
Table 3.
2PA1576Q
2PA1576R
2PA1576S
[1]
* = -: made in Hong Kong
* = t: made in Malaysia
Marking codes
Marking code
[1]
F*Q
F*R
F*S
Type number
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
[1]
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
-
Max
−60
−50
−6
−150
−200
−200
200
+150
150
+150
Unit
V
V
V
mA
mA
mA
mW
°C
°C
°C
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
T
amb
25
°C
[1]
-
−65
-
−65
Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
6. Thermal characteristics
Table 5.
Symbol
R
th(j-a)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
[1]
Min
-
Typ
-
Max
625
Unit
K/W
Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
2PA1576_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
2 of 7
NXP Semiconductors
2PA1576
PNP general-purpose transistor
7. Characteristics
Table 6.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
I
CBO
Parameter
collector-base
cut-off current
emitter-base
cut-off current
DC current gain
2PA1576Q
2PA1576R
2PA1576S
V
CEsat
collector-emitter
saturation
voltage
collector
capacitance
transition
frequency
I
C
=
−50
mA;
I
B
=
−5
mA
I
E
= i
e
= 0 A;
V
CB
=
−12
V; f = 1 MHz
I
C
=
−2
mA;
V
CE
=
−12
V;
f = 100 MHz
[1]
Conditions
I
E
= 0 A; V
CB
=
−30
V
I
E
= 0 A; V
CB
=
−30
V;
T
j
= 150
°C
I
C
= 0 A; V
EB
=
−4
V
I
C
=
−1
mA; V
CE
=
−6
V
Min
-
-
-
Typ
-
-
-
Max
−100
−5
−100
Unit
nA
μA
nA
I
EBO
h
FE
120
180
270
-
-
-
-
-
270
390
560
−500
mV
C
c
f
T
-
100
2.5
-
3.5
-
pF
MHz
[1]
Pulse test: t
p
300
μs; δ ≤
0.02.
2PA1576_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
3 of 7
NXP Semiconductors
2PA1576
PNP general-purpose transistor
8. Package outline
Plastic surface-mounted package; 3 leads
SOT323
D
B
E
A
X
y
HE
v
M
A
3
Q
A
A1
c
1
e1
e
bp
2
w
M
B
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.4
0.3
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT323
REFERENCES
IEC
JEDEC
JEITA
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
Fig 1.
2PA1576_6
Package outline SOT323 (SC-70)
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
4 of 7
NXP Semiconductors
2PA1576
PNP general-purpose transistor
9. Revision history
Table 7.
Revision history
Release date
20091117
Data sheet status
Product data sheet
Change notice
-
Supersedes
2PA1576_5
Document ID
2PA1576_6
Modifications:
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 1 “Package outline SOT323 (SC-70)”:
updated
Product data sheet
Product specification
Objective specification
n.a.
-
-
-
-
2PA1576_4
2PA1576_3
2PA1576_2
n.a.
2PA1576_5
2PA1576_4
2PA1576_3
2PA1576_2
20041124
19990531
19970328
19931213
2PA1576_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
5 of 7
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参数对比
与2PA1576Q相近的元器件有:2PA1576、2PA1576R、2PA1576S。描述及对比如下:
型号 2PA1576Q 2PA1576 2PA1576R 2PA1576S
描述 PNP general-purpose transistor PNP general-purpose transistor PNP general-purpose transistor PNP general-purpose transistor
包装说明 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compli unknow compli compli
ECCN代码 EAR99 EAR99 EAR99 EAR99
最大集电极电流 (IC) 0.15 A 0.1 A 0.15 A 0.15 A
集电极-发射极最大电压 50 V 40 V 50 V 50 V
配置 SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 120 120 180 270
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
元件数量 1 1 1 1
端子数量 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 PNP PNP PNP PNP
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 100 MHz 100 MHz 100 MHz 100 MHz
是否无铅 不含铅 - 不含铅 不含铅
是否Rohs认证 符合 - 符合 符合
零件包装代码 SC-70 - SC-70 SC-70
针数 3 - 3 3
基于收集器的最大容量 3.5 pF - 3.5 pF 3.5 pF
JESD-609代码 e3 - e3 e3
湿度敏感等级 1 - 1 1
峰值回流温度(摄氏度) 260 - 260 260
最大功率耗散 (Abs) 0.2 W - 0.2 W 0.2 W
端子面层 Tin (Sn) - Tin (Sn) Tin (Sn)
处于峰值回流温度下的最长时间 30 - 30 30
VCEsat-Max 0.5 V - 0.5 V 0.5 V
Base Number Matches 1 - 1 1
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