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2PB710AR

PNP general purpose transistor

器件类别:分立半导体    晶体管   

厂商名称:NXP(恩智浦)

厂商官网:https://www.nxp.com

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
零件包装代码
SOT-23
包装说明
PLASTIC, SC-59, 3 PIN
针数
3
Reach Compliance Code
unknow
ECCN代码
EAR99
最大集电极电流 (IC)
0.5 A
基于收集器的最大容量
15 pF
集电极-发射极最大电压
50 V
配置
SINGLE
最小直流电流增益 (hFE)
120
JEDEC-95代码
TO-236
JESD-30 代码
R-PDSO-G3
JESD-609代码
e3
元件数量
1
端子数量
3
最高工作温度
150 °C
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
260
极性/信道类型
PNP
最大功率耗散 (Abs)
0.25 W
认证状态
Not Qualified
表面贴装
YES
端子面层
Matte Tin (Sn)
端子形式
GULL WING
端子位置
DUAL
处于峰值回流温度下的最长时间
40
晶体管应用
SWITCHING
晶体管元件材料
SILICON
标称过渡频率 (fT)
120 MHz
VCEsat-Max
0.6 V
Base Number Matches
1
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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D114
2PB710A
PNP general purpose transistor
Product data sheet
Supersedes data of 1999 Apr 23
1999 May 31
NXP Semiconductors
Product data sheet
PNP general purpose transistor
FEATURES
High current (max. 500 mA)
Low voltage (max. 50 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
PNP transistor in an SC-59 plastic package.
NPN complement: 2PD602A.
MARKING
TYPE NUMBER
2PB710AQ
2PB710AR
2PB710AS
MARKING CODE
DQ
DR
DS
handbook, halfpage
2PB710A
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
MAM322
1
Top view
2
Fig.1 Simplified outline (SC-59) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−65
−65
MIN.
MAX.
−60
−50
−5
−500
−1
−200
250
+150
150
+150
V
V
V
mA
A
mA
mW
°C
°C
°C
UNIT
1999 May 31
2
NXP Semiconductors
Product data sheet
PNP general purpose transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
2PB710AQ
2PB710AR
2PB710AS
DC current gain
V
CEsat
V
BEsat
C
c
f
T
base-emitter saturation voltage
collector capacitance
transition frequency
2PB710AQ
2PB710AR
2PB710AS
Note
1. Pulse test: t
p
300
μs; δ ≤
0.02.
I
C
=
−500
mA; V
CE
=
−10
V; note 1
I
C
=
−300
mA; I
B
=
−30
mA; note 1
I
E
= i
e
= 0; V
CB
=
−10
V; f = 1 MHz
I
C
=
−50
mA; V
CE
=
−10
V;
f = 100 MHz; note 1
collector-emitter saturation voltage I
C
=
−300
mA; I
B
=
−30
mA; note 1
CONDITIONS
I
E
= 0; V
CB
=
−60
V
I
E
= 0; V
CB
=
−60
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−5
V
I
C
=
−150
mA; V
CE
=
−10
V; note 1
85
120
170
40
100
120
140
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
2PB710A
UNIT
K/W
MAX.
−10
−5
−10
170
240
340
−600
−1.5
15
UNIT
nA
μA
nA
mV
V
pF
MHz
MHz
MHz
1999 May 31
3
NXP Semiconductors
Product data sheet
PNP general purpose transistor
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
2PB710A
SOT346
E
D
B
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.3
1.0
A
1
0.1
0.013
b
p
0.50
0.35
c
0.26
0.10
D
3.1
2.7
E
1.7
1.3
e
1.9
e
1
0.95
H
E
3.0
2.5
L
p
0.6
0.2
Q
0.33
0.23
v
0.2
w
0.2
OUTLINE
VERSION
SOT346
REFERENCES
IEC
JEDEC
TO-236
EIAJ
SC-59
EUROPEAN
PROJECTION
ISSUE DATE
98-07-17
1999 May 31
4
NXP Semiconductors
Product data sheet
PNP general purpose transistor
DATA SHEET STATUS
DOCUMENT
STATUS
(1)
Objective data sheet
Preliminary data sheet
Product data sheet
Notes
1. Please consult the most recently issued document before initiating or completing a design.
PRODUCT
STATUS
(2)
Development
Qualification
Production
DEFINITION
2PB710A
This document contains data from the objective specification for product
development.
This document contains data from the preliminary specification.
This document contains the product specification.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
General
Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes
NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use
NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications
Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values
Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
Terms and conditions of sale
NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
No offer to sell or license
Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control
This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data
The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
1999 May 31
5
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参数对比
与2PB710AR相近的元器件有:2PB710A、2PB710AQ、2PB710AS。描述及对比如下:
型号 2PB710AR 2PB710A 2PB710AQ 2PB710AS
描述 PNP general purpose transistor PNP general purpose transistor PNP general purpose transistor PNP general purpose transistor
Reach Compliance Code unknow compli unknow unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99
最大集电极电流 (IC) 0.5 A 0.5 A 0.5 A 0.5 A
基于收集器的最大容量 15 pF 15 pF 15 pF 15 pF
集电极-发射极最大电压 50 V 50 V 50 V 50 V
配置 SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 120 85 85 170
JESD-30 代码 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
元件数量 1 1 1 1
端子数量 3 3 3 3
最高工作温度 150 °C 150 °C 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
极性/信道类型 PNP PNP PNP PNP
最大功率耗散 (Abs) 0.25 W 0.2 W 0.25 W 0.25 W
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 YES YES YES YES
端子形式 GULL WING GULL WING GULL WING GULL WING
端子位置 DUAL DUAL DUAL DUAL
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 120 MHz 150 MHz 100 MHz 140 MHz
VCEsat-Max 0.6 V 0.6 V 0.6 V 0.6 V
是否Rohs认证 符合 - 符合 符合
零件包装代码 SOT-23 - SOT-23 SOT-23
包装说明 PLASTIC, SC-59, 3 PIN - PLASTIC, SC-59, 3 PIN SMALL OUTLINE, R-PDSO-G3
针数 3 - 3 3
JEDEC-95代码 TO-236 - TO-236 TO-236
JESD-609代码 e3 - e3 e3
峰值回流温度(摄氏度) 260 - 260 260
端子面层 Matte Tin (Sn) - Matte Tin (Sn) TIN
处于峰值回流温度下的最长时间 40 - 40 40
Base Number Matches 1 - 1 1
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